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RF051VA2S Diodes Fast recovery diode RF051VA2S Applications High speed switching Features 1) Small mold type (TUMD2) 2) Ultra high switching speed 3) High reliability. Dimensions (Unit : mm) 0.170.1 0.05 1.30.05 Land size figure (Unit : mm) 1.1 1.90.1 2.50.2 Constructure Silicon epitaxial planar 0.80.05 TUMD2 Constructure ROHM : TUMD2 0.1 dot (year week factory) + day 0.60.2 Taping dimensions (Unit : mm) 4.00.1 2.00.05 1.750.1 1.550.1 0 0.250.05 3.50.05 8.00.2 1.430.05 4.00.1 1.00.2 0 2.75 2.80.05 0.90.08 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak 60Hz1cyc Junction temperature Storage temperature Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Symbol VRM VR Io IFSM Tj Tstg Limits 200 200 0.5 5 150 -55 to +150 Unit V V A A Min. - Typ. - Max. 0.98 10 25 Unit V A ns Conditions IF=0.5A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR 0.8 0.5 2.0 1/3 RF051VA2S Diodes Electrical characteristic curves 1000 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 100 10 1 0.1 0.01 Ta=25 Ta=125 Ta=150 Ta=75 Ta=-25 1000000 100000 10000 1000 100 10 1 0 200 400 600 800 1000 0 50 100 150 200 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS Ta=-25 Ta=75 Ta=25 Ta=125 100 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=150 10 1 0.001 0.1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 890 1000 REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25 IF=0.5A n=30pcs 900 800 700 600 500 400 300 200 100 0 VF DISPERSION MAP IR DISPERSION MAP AVE:516.3nA Ta=25 VR=200V n=30pcs 10 9 8 7 6 5 4 3 2 1 0 Ct DISPERSION MAP ave=3.68pF AVE:3.13pF Ta=25 f=1MHz f=1MHz VR=0V VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) 880 870 860 850 AVE:861.0mV 840 50 30 RESERVE RECOVERY TIME:trr(us) 25 20 15 10 5 0 IFSM DISRESION MAP trr DISPERSION MAP AVE8.6ns Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs 100 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 45 40 35 30 25 20 15 10 5 0 Ifsm 10 8.3ms 8.3ms 1cyc Ifsm 1cyc 8.3ms 1 AVE:6.50A 0.1 1 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Mounted on epoxy board 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) IM=1mA 1ms tim IF=10mA 1 DC D=1/2 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 10 0.8 300us t FORWARD POWER DISSIPATION:Pf(W) Rth(j-a) 0.6 100 Sin(180) 0.4 1 Rth(j-c) 0.2 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 10 0.01 0 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0.5 1 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 2/3 RF051VA2S Diodes 0.1 1.5 1.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V Io t T VR D=t/T VR=100V Tj=150 0A 0V 1 Io t T VR D=t/T VR=100V Tj=150 AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 0.08 REVERSE POWER DISSIPATION:PR (W) 0.06 1 DC D=1/2 Sin(180) DC D=1/2 DC D=1/2 0.04 0.5 0.5 Sin(180) 0 0.02 Sin(180) 0 0 0 50 100 150 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 200 0 25 50 75 100 125 150 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 30 No break at 30kV ELECTROSTATIC DDISCHARGE TEST ESD(KV) 25 20 15 AVE:7.70kV 10 5 0 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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