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(R)
RBO40-40G/T
REVERSED BATTERY AND OVERVOLTAGE PROTECTION
Application Specific Discretes A.S.D.TM
FEATURES
s
s
s
s
s
s
PROTECTION AGAINST "LOAD DUMP" PULSE 40A DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY BREAKDOWN VOLTAGE : 24 V min. CLAMPING VOLTAGE : 40 V max. COMPLIANT WITH ISO / DTR 7637
D2PAK RBO40-40G
DESCRIPTION Designed to protect against battery reversal and load dump overvoltages in automotive applications, this monolithic component offers multiple functions in the same package : D1 : reversed battery protection T1 : clamping against negative overvoltages T2 : Transil function against "load dump" effect.
TO220-AB RBO40-40T
FUNCTIONAL DIAGRAM
1
3
2
TM : TRANSIL and ASD are trademarks of STMicroelectronics.
September 2003 - Ed:5
1/10
RBO40-40G / RBO40-40T
ABSOLUTE MAXIMUM RATINGS Symbol IFSM IF VPP PPP Tstg Tj TL Parameter Non repetitive surge peak forward current (Diode D1) DC forward current (Diode D1) Peak load dump voltage (see note 1and 2) 5 pulses (1 minute between each pulse) Peak pulse power between Input and Output (Transil T1) Tj initial = 25C Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10 s at 4.5mm from case for TO220-AB 10/1000 s tp = 10 ms Tc = 75C Value 120 40 80 1500 - 40 to + 150 150 260 Unit A A V W C C
Note 1 : for a surge greater than the maximum value, the device will fail in short-circuit. Note 2 : see Load Dump curves.
THERMAL RESISTANCE Symbol Rth (j-c) Rth (j-a) Junction to case Junction to ambient Parameter RBO40-40G RBO40-40T RBO40-40T Value 1.0 1.0 60 Unit C/W C/W
D1 1 3
I32
I13
IF
Ipp32
T1
2
T2
IR32 IR M 32
VCL 31 VBR31 VRM31 VF13 IRM31 IR31
V13
VRM 32 VB R 32 VC L 32
V32
1
3
Ipp31
2
Ex :VF 13 . between Pin 1 and Pin 3 VBR 32 . between Pin 3 and Pin 2
2/10
RBO40-40G / RBO40-40T
Symbol VRM31/VRM32 VBR31/VBR32 IR31/IR32 VCL31/VCL32 VF13 IPP T C31/C32 C13 Parameter Stand-off voltage Transil T1 / Transil T2. Breakdown voltage Transil T1 / Transil T2. Leakage current Transil T1 / Transil T2. Clamping voltage Transil T1 / Transil T2. Forward voltage drop Diode D1. Peak pulse current. Temperature coefficient of VBR. Capacitance Transil T1 / Transil T2. Capacitance of Diode D1
ELECTRICAL CHARACTERISTICS : DIODE D1 (- 40C < Tamb < + 85C) Symbol VF 13 VF 13 VF 13 VF 13 C13 IF = 40 A IF = 20A IF = 1 A IF = 100 mA F = 1MHz VR= 0 V 3000 Test Conditions Value Min. Typ. Max. 1.9 1.45 1 0.95 Unit V V V V pF
ELECTRICAL CHARACTERISTICS : TRANSIL T1 (- 40C < Tamb < + 85C) Symbol VBR 31 VBR 31 IRM 31 IRM 31 VCL 31 T C 31 IR = 1 mA IR = 1 mA, Tamb = 25C VRM = 20 V VRM = 20 V, Tamb = 25C IPP = 37.5A, Tj initial = 25C Temperature coefficient of VBR F = 1MHz VR = 0 V 3000 10/1000s Test Conditions Value Min. 22 24 Typ. Max. 35 32 100 10 40 9 Unit V V A A V 10 /C pF
-4
ELECTRICAL CHARACTERISTICS : TRANSIL T2 (- 40C < Tamb < + 85C) Symbol VBR 32 VBR 32 IRM 32 IRM 32 VCL 32 T C32 IR = 1 mA IR = 1 mA, Tamb = 25C VRM = 20 V VRM = 20 V, Tamb = 25C IPP = 20 A (note 1) Temperature coefficient of VBR F = 1MHz VR = 0 V 8000 Test Conditions Value Min. 22 24 Typ. Max. 35 32 100 10 40 9 Unit V V A A V 10 /C pF
-4
Note 1 : One pulse, see pulse definition in load dump test generator circuit.
3/10
RBO40-40G / RBO40-40T
PRODUCT DESCRIPTION The RBO has 3 functions integrated on the same chip. D1 : "Diode function" in order to protect against reversed battery operation. T2 : "Transil function" in order to protect against positive surge generated by electric systems (ignition, relay. ...). T1 : Protection for motor drive application (See below).
1
3
2
BASIC APPLICATION * The monolithic multi-function protection (RBO) has been developed to protect sensitive semiconductors in car electronic modules against both overvoltage and battery reverse. * In addition, the RBO circuit prevents overvoltages generated by the module from affecting the car supply network.
MOTOR DRIVER APPLICATION
BATTERY D1 T2 T1 MOTOR
Filter
RBO DEVICE
MOTOR CONTROL
In this application, one half of the motor drive circuit is supplied through the "RBO" and is thus protected as per its basic function application. The second part is connected directly to the "car supply network" and is protected as follows : - For positive surges : T2 (clamping phase) and D1 in forward-biased. - For negative surges : T1 (clamping phase) and T2 in forward-biased.
4/10
RBO40-40G / RBO40-40T
PINOUT configuration in D2PAK : - Input (1) : - Output (3) : - Gnd (2) : Marking : Pin 1 Pin 3 Connected to base Tab Logo, date code, RBO40-40G
D1
T2
T1 TAB
PINOUT configuration in TO220AB : - Input (1) : - Output (3) : - GND (2) : Marking : Pin 1 Pin 3 Connected to base Tab Logo, date code, RBO40-40T
D1
T2
T1
(TAB)
5/10
RBO40-40G / RBO40-40T
LOAD DUMP TEST GENERATOR CIRCUIT (SCHAFFNER NSG 506 C). Issued from ISO / DTR 7637.
Open circuit (voltage curve) (pulse test n5)
Corresponding current wave with D.U.T.
U(V) 90% Vs 10% Vbat 0
t tr offset 10% / 13.5V
I Ipp
Ipp/2
t
0
tp = 40ms
t
Impulse Vs (V) Vbat (V) Ri () t (ms) tr (ms) Number
60s between each pulse (*) Generator setting
N5 66.5 13.5 2 200 (*) <10 5
CALIBRATION METHOD FOR SCHAFFNER NSG 506 C 1) With open circuit (generator is in open circuit): - calibrate Vs 2) With short circuit (generator is in short circuit): - calibrate Ri (Ri = 2) 3) With D.U.T. - calibrate tp (tp = 40ms @ Ipp/2) Typical Voltage curve (open circuit)
typ. Vpp
Typical Voltage and Current curve with D.U.T.
typ. VCL
Ipp
20ms/div. 5.0V/div.
VBat 20ms/div. 10.0V/div.
20ms/div. 3A/div.
6/10
RBO40-40G / RBO40-40T
Fig. 1 : Peak pulse power versus exponential pulse duration (Tj initial = 85C).
Fig. 2-1 : Clamping voltage versus peak pulse current (Tj initial = 85C). Exponential waveform tp = 40 ms and tp = 1 ms (TRANSIL T2).
Ppp(kW)
VCL(V)
10.0 5.0 2.0 1.0 0.5 0.2 0.1 1 2 5
Transil T1 Transil T2
45.0 42.5 40.0
tp = 40ms
37.5 35.0
tp(ms) 10 20 50 100
tp = 1ms
32.5 Ipp(A) 30.0 0.1 0.2 0.5 1 2 5 10 20 50 100
Fig. 2-2 : Clamping voltage versus peak pulse current (Tj initial = 85C). Exponential waveform tp = 1 ms and tp = 20 s (TRANSIL T1).
Fig. 3 : Relative variation of peak pulse power versus junction temperature.
55 50 45 40 35 30 25
VCL(V)
Ppp[Tj]/Ppp[Tj initial=85C]
1.20 1.00 0.80
tp = 1ms tp = 20s
0.60 0.40 0.20
1
2
5
Ipp(A) 10 20
Tj initial (C)
50
100
200
500
0.00
0
25
50
75
100
125
150
175
7/10
RBO40-40G / RBO40-40T
Fig. 4 : Relative variation of thermal impedance junction to case versus pulse duration.
Fig. 5-1 : Peak forward voltage drop versus peak forward current (typical values) - (TRANSIL T2).
Zth(j-c)/Rth(j-c) 1.0
VFM(V) 2.0 1.8 1.6
0.5
1.4 1.2 1.0
Tj = 25C Tj = 150 C
0.2 tp (s) 0.1 1E-3 1E-2 1E-1 1E+0 1E+1
0.8 0.6 0.4 0.1 0.2 0.5 1 2 5 10
IFM(A) 20 50 100
Fig. 5-2 : Peak forward voltage drop versus peak forward current (typical values) - (DIODE D1).
Fig. 6 : Relative variation of leakage current versus junction temperature.
VFM(V) 3.5 3.0 2.5 2.0 1.5
Tj = 25C
1.0 0.5 0.1 0.2 0.5 1 2 5 10
Tj = 150 C
IFM(A)
20
50
100
ORDERING INFORMATION
RBO
Reverse Battery & Overvoltage Protection
40
-
40
VCL = 40V
G
IF(AV) = 40A
Package: G = D2PAK T = TO-220AB
8/10
RBO40-40G / RBO40-40T
PACKAGE MECHANICAL DATA D2PAK Plastic DIMENSIONS REF.
A E L2 C2
Millimeters Min. Typ. Max. Min. 4.60 0.169 2.69 0.098 0.23 0.001 0.93 0.027 1.40 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40 0.40 0 8 0 0.60 0.017 1.36 0.047 9.35 0.352 10.28 0.393 5.28 0.192 15.85 0.590 1.40 0.050 1.75 0.055 4.30 2.49 0.03 0.70
Inches Typ. Max. 0.181 0.106 0.009 0.037 0.055 0.024 0.054 0.368 0.405 0.208 0.624 0.055 0.069 0.016 8
A A1 A2
D
L L3 A1 B2 B G A2 2.0 MIN. FLAT ZONE V2 C R
B B2 C C2 D E G L L2 L3 R V2
FOOT-PRINT (in millimeters) D2PAK
16.90
10.30 1.30
5.08
3.70 8.90
9/10
RBO40-40G / RBO40-40T
PACKAGE MECHANICAL DATA TO-220AB Plastic DIMENSIONS REF.
B C
Millimeters 15.20 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 2.65 1.14 1.14 2.60 14.00 0.511 10.40 0.393 0.88 0.024 1.32 0.048 4.60 0.173 0.70 0.019 2.72 0.094 2.70 0.094 6.60 0.244 3.85 0.147 2.95 0.104 1.70 0.044 1.70 0.044 15.90 0.598
Inches 0.625 0.147 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.116 0.066 0.066 0.102
Min. Typ. Max. Min. Typ. Max. A a1
F
b2
L
a2 B b1 b2 C c1
I A
l4
a1
c2
c2 e F I I4 L
l3
l2 a2
15.80 16.40 16.80 0.622 0.646 0.661
b1 e
M c1
l2 l3 M
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain Sweden - Switzerland - United Kingdom - United States www.st.com 10/10

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