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| RB491D Diodes Schottky barrier diode RB491D !Applications Low-power rectification For switching power supply !External dimensions (Units : mm) +0.2 2.90.2 1.90.2 0.95 0.95 1.1 -0.1 0.80.1 0.4 -0.05 0.15 -0.06 !Construction Silicon epitaxial planar (All leads have the same dimensions) !Circuit ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346 !Absolute maximum ratings (Ta=25C) Parameter Peak reverse voltage DC reverse voltage DC forward current Peak forward surge current Junction temperature Storage temperature 60Hz for 1 Symbol VRM VR IF IFSM Tj Tstg Limits 25 20 1.0 3 125 -40+125 Unit V V A A C C !Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Symbol VF IR Min. - - Typ. - - Max. 0.45 200 Unit V A IF=1.0A VR=20V Conditions Note) ESD sensitive product handling required. 0.3~0.6 D2E !Features 1) Small surface mounting type. (SMD3) 2) Ultra low VF. (VF=0.40V Typ. at 1A) 3) IF=1.0A guaranteed despite the size. +0.1 2.80.2 1.6 -0.1 +0.2 0~0.1 +0.1 RB491D Diodes !Electrical characteristic curves (Ta=25C) 10 REVERSE CURRENT : IR (mA) 1000 100 10 75C 1 100 10 1 0.1 0 25C 10000 f=1MHz TERMINAL CAPACITANCE : CT (pF) FORWARD CURRENT : IF (A) 1 Ta=125C 1000 Ta= 12 5 C 75 C 25 C 100m 100 10m -25 C 1m -25C 10 0.1m 0 0.1 0.2 0.3 0.4 0.5 0.6 10 20 30 40 50 60 70 1 0 5 10 15 20 25 30 35 40 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reversecharacteristics Fig.3 Capacitance between terminals characteristics DC D=0.8 AVERAGE RECTIFIED FORWARD CURRENT : IO (A) FORWARD POWER DISSIPATION : PF (W) 0.7 0.6 sine 1.5 DC D=0.8 sine D=0.5 Tp IF IO T D=Tp/T VR=VRM /2 D=0.5 D=0.3 D=0.2 0.5 0.4 D=0.05 D=0.1 1.0 D=0.3 D=0.2 0.3 IF 0.2 Tp 0.5 D=0.1 D=0.05 IO T D=Tp/T Tj=Tj Max. 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0 25 50 75 100 125 AVERAGE RECTIFIED FORWARD CURRENT : IO (A) AMBIENT TEMPERATURE : Ta (C) Fig.4 Forward power dissipation characteristics Fig.5 Derating curve (IO - Ta) |
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