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RB205T-40 Diodes Schottky barrier diode RB205T-40 Applications Switching power supply External dimensions (Unit : mm) Structure 4.50.3 0.1 8.00.2 12.00.2 15.00.4 0.2 1.3 0.8 (1) (2) (3) 13.5MIN Construction Silicon epitaxial planar 1.2 5.00.2 0.70.1 0.05 8.0 Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability 10.00.3 0.1 2.80.2 0.1 2.60.5 ROHM : O220FN Manufacture Date Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current*1 Forward current surge peak 60Hz1cyc*1 Junction temperature Storage temperature (*1)Tc=100max Per chip : Io/2 Symbol VRM VR Io IFSM Tj Tstg Limits 45 40 15 100 150 -40 to +150 Unit V V A A Electrical characteristic (Ta=25C) Parameter Forward characteristics Reverse characteristics Thermal impedance Symbol VF IR jc Min. Typ. Max. 0.55 300 2.0 Unit V A /W Conditions IF=7.5A VR=40V junction to case Rev.B 1/3 RB205T-40 Diodes Electrical characteristic curves 10 Ta=150 1000000 100000 REVERSE CURRENT:IR(uA) Ta=150 Ta=125 10000 f=1MHz FORWARD CURRENT:IF(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125 1 10000 Ta=75 1000 Ta=75 Ta=25 1000 100 10 1 0.1 Ta=-25 Ta=25 100 0.1 Ta=-25 10 0.01 0 100 200 300 400 500 600 700 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 1 0 5 10 15 20 25 30 35 40 0 10 20 30 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 520 FORWARD VOLTAGE:VF(mV) 200 REVERSE CURRENT:IR(uA) Ta=25 IF=7.5A n=30pcs Ta=25 VR=40V n=30pcs 1650 1640 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 510 500 490 480 AVE:492.2mV 150 1630 1620 1610 1600 1590 1580 1570 1560 1550 AVE:1619.8pF Ta=25 f=1MHz VR=0V n=10pcs 100 50 AVE:35.9uA 470 VF DISPERSION MAP 0 IR DISPERSION MAP Ct DISPERSION MAP 300 PEAK SURGE FORWARD CURRENT:IFSM(A) 30 Ifsm 1cyc 8.3ms 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) RESERVE RECOVERY TIME:trr(ns) 250 200 150 100 50 0 25 20 15 10 5 0 trr DISPERSION MAP Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 100 AVE:176.0A AVE:20.6ns 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISRESION MAP 1000 100 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) Ifsm 1cyc 8.3ms IM=100mA IF=10A 20 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 300us Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 1ms time 15 D=1/2 100 10 Sin(180) DC 1 Rth(j-c) 5 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 0.1 10 1000 TIME:t(s) Rth-t CHARACTERISTICS 0 5 10 15 20 25 AVERAGE RECTIFIED FORWARD CURRENTIo(A) cIo-Pf CHARACTERISTICS 30 Rev.B 2/3 RB205T-40 Diodes 20 18 40 35 0A 0V DC D=1/2 t T 40 35 0A 0V D=1/2 DC t T Io Io VR D=t/T VR=20V Tj=150 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 14 12 10 8 6 4 2 0 0 10 20 Sin(180) 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS D=1/2 DC 30 25 20 15 10 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 16 VR D=t/T VR=20V Tj=150 30 25 20 15 10 5 0 Sin(180) 5 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 150 Sin(180) 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 150 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 AVE:21.6kV 15 10 5 0 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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