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| QSL12 Transistors General purpose transistor (isolated transistor and diode) QSL12 A 2SD2675 and a RB461F are housed independently in a TSMT5 package. Applications DC / DC converter Motor driver External dimensions (Unit : mm) QSL12 2.8 1.6 0.3 to 0.6 ROHM : TSMT5 Structure Silicon epitaxial planar transistor Schottky barrier diode Abbreviated symbol : L12 Equivalent circuit (5) (4) Di2 Tr1 (1) (2) (3) Packaging specifications Type Package Marking Code Basic ordering unit(pieces) QSL12 TSMT5 L12 TR 3000 0 to 0.1 Features 1) Tr : Low VCE(sat) Di : Low VF 2) Small package 0.16 (3) (4) Each lead has same dimensions 0.85 0.7 0.95 0.95 1.9 2.9 0.4 (2) (1) (5) Rev.A 1/4 QSL12 Transistors Absolute maximum ratings (Ta=25C) Tr1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature + + Symbol Limits VCBO 30 VCEO 30 VEBO 6 IC 1 ICP 2 Pc 0.9 Tj 150 Tstg -40 to +125 Unit V V V A 1 A W / ELEMENT 2 C C 1 Single pulse, Pw=1ms 2 Mounted on a 25mm 25mm t0.8mm ceramic substrate Di2 Parameter Symbol Peak reverse voltage VRM Reverse voltage (DC) VR Average rectified forward current IF Forward current surge peak (60HZ, 1) IFSM Power dissipation PD Junction temperature Tj Range of storage temperature Tstg Limits 25 20 700 3 0.7 125 -40 to +125 Unit V V mA A W / ELEMENT C C Mounted on a 25mm+ 25mm+ t0.8mm ceramic substrate Tr1&Di2 Parameter Total power disipation + + Symbol PD Limits 0.5 1.25 Unit W / TOTAL W / TOTAL 1 2 1 Each terminal mounted on a recommended land. 2 Mounted on a 25mm 25mm t0.8mm ceramic substrate. Electrical characteristics (Ta=25C) Tr1 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Pulsed Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob 30 30 6 - - - 270 - - - - - - - 120 - 320 7 - - - 100 100 350 680 - - V V V nA nA mV - pF IC=10A IC=1mA IE=10A VCB=30V VEB=6V Conditions IC/IB=500mA/25mA VCE/IC=2V/100mA VCB=10V, IE=0A, f=1MHz MHz VCE=2V, IE= -100mA, f=100MHz Di2 Parameter Symbol VF IR Min. - - - Typ. 450 - 9 Max. 490 200 - Unit mV A ns Conditions IF=700mA VR=20V IF=IR=100mA, Irr=0.1IR Forward voltage Reverse current Reverse recovery fime trr Rev.A 2/4 QSL12 Transistors Electrical characteristic curves Tr1 Ta=100C VCE=2V Pulsed BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1000 10 10 Ta=25C IC/IB=20/1 Pulsed Ta= -40C Ta=25C Ta=100C VCE=2V DC CURRENT GAIN : hFE Ta=25C Ta= -40C 1 1 VBE(sat) 100 0.1 IC/IB=50/1 IC/IB=20/1 VCE(sat) 0.1 Ta=25C Ta= -40C Ta=100C 0.01 IC/IB=10/1 10 0.001 0.01 0.1 1 0.01 0.001 0.01 0.1 1 0.001 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current Fig.3 Collector-emitter saturation voltage vs. collector current 1 TRANSITION FREQUENCY : fT (MHz) VCE=2V Pulsed 1000 COLLECTOR CURRENT : IC (A) Ta=25C VCE=2V f=100MHz 1000 tstg 0.1 Ta=100C Ta=25C SWITCHING TIME : (ns) 100 tf Ta= -40C 100 tr tdon 0.01 10 0.001 0 0.5 1 1.5 10 0.01 0.1 EMITTER CURRENT : IE (A) 1 Ta=25C VCE=5V IC/IB=20/1 1 0.01 0.1 1 BASE TO EMITTER CURRENT : VBE (V) COLLECTOR CURRENT : IC (A) Fig.4 Grounded emitter propagation characteristics Fig.5 Gain bandwidth product vs. emitter current Fig.6 Switching time EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 100 Cib Ta=25C IC=0A f=1MHz Cob 10 1 0.01 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 3/4 QSL12 Transistors Di2 10 1000m 100m FORWARD CURRENT : IF (A) 1 C 5 REVERSE CURRENT : IR (A) Ta=125C 10m 1m 100 Ta=25C 100m Ta =2 5 Ta 10m C =- 25 C Ta 2 =1 10 1 0.1 Ta= -25C 1m 0.1m 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF (V) 0 10 20 30 40 50 60 70 REVERSE VOLTAGE : VR (V) Fig.8 Forward characteristics Fig.9 Reverse characteristics Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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