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| IKW08T120 ^ TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C * * * * * * * * * Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP305D Short circuit withstand time - 10s G Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 1200V IC 8A VCE(sat),Tj=25C 1.7V Tj,max 150C E P-TO-247-3-1 (TO-247AC) Type IKW08T120 Package TO-247AC Ordering Code Q67040-S4514 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj Tstg -40...+150 -55...+150 260 C 1) Symbol VCE IC Value 1200 16 8 Unit V A ICpul s IF 24 24 16 8 IFpul s VGE tSC Ptot 24 20 10 70 V s W VGE = 15V, VCC 1200V, Tj 150C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 1 Oct-03 Power Semiconductors IKW08T120 ^ TrenchStop Series Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 0 .5m A VCE(sat) V G E = 15 V , I C = 8 A T j =2 5 C T j =1 2 5 C T j =1 5 0 C Diode forward voltage VF V G E = 0V , I F = 8 A T j =2 5 C T j =1 2 5 C T j =1 5 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 0. 3m A, V C E = V G E V C E = 12 0 0V, V G E = 0V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance Integrated gate resistor IGES gfs RGint V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 8 A 5 none 0.2 2.0 100 nA S 5.0 1.7 1.7 1.7 5.8 2.2 6.5 mA 1.7 2.0 2.2 2.2 1200 V Symbol Conditions Value min. typ. max. Unit RthJA TO-247AC 40 RthJCD 2.3 RthJC 1.7 K/W Symbol Conditions Max. Value Unit Power Semiconductors 2 Rev. 1 Oct-03 IKW08T120 ^ TrenchStop Series Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) Ciss Coss Crss QGate LE IC(SC) V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 96 0 V, I C =8 A V G E = 15 V T O - 24 7A C V G E = 15 V ,t S C 10 s V C C = 6 0 0 V, T j = 25 C - 600 36 28 53 48 13 - pF nC nH A Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm d i r r /d t T j =2 5 C , V R = 6 00 V , I F = 8 A, d i F / d t =6 0 0 A/ s 80 1.0 13 420 ns C A A/s td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 60 0 V, I C = 8 A, V G E =- 15 /1 5 V , R G = 81 , 2) L =1 8 0n H, 2) C = 3 9p F Energy losses include "tail" and diode reverse recovery. 40 23 450 70 0.67 0.7 1.37 mJ ns Symbol Conditions Value min. typ. max. Unit 1) 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 1 Oct-03 Power Semiconductors IKW08T120 ^ TrenchStop Series Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm d i r r /d t T j =1 5 0 C V R = 6 00 V , I F = 8 A, d i F / d t =6 0 0 A/ s 200 2.3 20 320 ns C A A/s td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 C, V C C = 60 0 V, I C =8 A , V G E =- 15 /1 5 V , R G = 8 1 , 1) L =1 8 0n H, 1) C = 3 9p F Energy losses include "tail" and diode reverse recovery. 40 26 570 140 1.08 1.2 2.28 mJ ns Symbol Conditions Value min. typ. max. Unit 1) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. 4 Rev. 1 Oct-03 Power Semiconductors IKW08T120 ^ TrenchStop Series tp=2s 20A TC=80C 10A IC, COLLECTOR CURRENT 15A TC=110C 10A IC, COLLECTOR CURRENT 10s 1A 50s 150s 500s Ic 5A 0,1A 20ms DC Ic 0,01A 1V 0A 10Hz 100Hz 1kHz 10kHz 100kHz 10V 100V 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 81) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C;VGE=15V) 70W 15A 50W 40W 30W 20W 10W 0W 25C IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 60W 10A 5A 50C 75C 100C 125C 0A 25C 75C 125C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C) TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C) Power Semiconductors 5 Rev. 1 Oct-03 IKW08T120 ^ TrenchStop Series 20A 20A IC, COLLECTOR CURRENT 15V 15A 13V 11V 10A 9V 7V 5A IC, COLLECTOR CURRENT VGE=17V VGE=17V 15V 15A 13V 11V 10A 9V 7V 5A 0A 0V 1V 2V 3V 4V 5V 6V 0A 0V 1V 2V 3V 4V 5V 6V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C) VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE 20A 3,0V 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V -50C IC=15A IC, COLLECTOR CURRENT 15A IC=8A IC=5A IC=2.5A 10A 5A TJ=150C 25C 0A 0V 2V 4V 6V 8V 10V 12V 0C 50C 100C VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) Power Semiconductors 6 Rev. 1 Oct-03 IKW08T120 ^ TrenchStop Series td(off) td(off) tf t, SWITCHING TIMES t, SWITCHING TIMES 100ns tf 100 ns td(on) 10ns tr td(on) 10 ns tr 1ns 5A 10A 15A 1 ns 5 50 100 150 200 IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150C, VCE=600V, VGE=0/15V, RG=81, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150C, VCE=600V, VGE=0/15V, IC=8A, Dynamic test circuit in Figure E) td(off) VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 6V 5V 4V min. 3V 2V 1V 0V -50C max. typ. t, SWITCHING TIMES 100ns tf td(on) tr 10ns 0C 50C 100C 150C 0C 50C 100C 150C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=8A, RG=81, Dynamic test circuit in Figure E) TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA) Power Semiconductors 7 Rev. 1 Oct-03 IKW08T120 ^ TrenchStop Series *) Eon and Etsinclude losses due to diode recovery Ets* 3,2 mJ *) Eon and Ets include losses due to diode recovery Ets* E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 6,0mJ 2,8 mJ 2,4 mJ 2,0 mJ 1,6 mJ 1,2 mJ 0,8 mJ 0,4 mJ Eoff Eon* 4,0mJ Eon* 2,0mJ Eoff 0,0mJ 5A 10A 15A 0,0 mJ 5 50 100 150 200 IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150C, VCE=600V, VGE=0/15V, RG=81, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150C, VCE=600V, VGE=0/15V, IC=8A, Dynamic test circuit in Figure E) *) E on and E ts include losses due to diode recovery 2,5mJ E ts * *) Eon and Ets include losses due to diode recovery E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 3mJ 2,0mJ 1,5mJ E off E on* 2mJ Ets* 1mJ Eoff Eon* 1,0mJ 0,5mJ 0,0mJ 50C 100C 150C 0mJ 400V 500V 600V 700V 800V TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=8A, RG=81, Dynamic test circuit in Figure E) VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=150C, VGE=0/15V, IC=25A, RG=22, Dynamic test circuit in Figure E) Power Semiconductors 8 Rev. 1 Oct-03 IKW08T120 ^ TrenchStop Series 1nF Ciss VGE, GATE-EMITTER VOLTAGE 15V 240V 10V 960V c, CAPACITANCE 100pF Coss Crss 5V 0V 0nC 25nC 50nC 10pF 0V 10V 20V QGE, GATE CHARGE Figure 17. Typical gate charge (IC=8 A) VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) tSC, SHORT CIRCUIT WITHSTAND TIME 15s IC(sc), short circuit COLLECTOR CURRENT 12V 14V 16V 75A 10s 50A 5s 25A 0s 0A 12V 14V 16V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C) VGE, GATE-EMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE 600V, Tj 150C) Power Semiconductors 9 Rev. 1 Oct-03 IKW08T120 ^ TrenchStop Series VCE, COLLECTOR-EMITTER VOLTAGE IC, COLLECTOR CURRENT 600V VCE 30A 30A 600V 400V 20A 20A 400V IC 10A 200V 200V 10A 0V IC 0us 0.5us 1us 1.5us VCE 0A 0A 0us 0V 0.5us 1us 1.5us t, TIME Figure 21. Typical turn on behavior (VGE=0/15V, RG=81, Tj = 150C, Dynamic test circuit in Figure E) t, TIME Figure 22. Typical turn off behavior (VGE=15/0V, RG=81, Tj = 150C, Dynamic test circuit in Figure E) ZthJC, TRANSIENT THERMAL RESISTANCE 10 K/W D=0.5 ZthJC, TRANSIENT THERMAL RESISTANCE 0 D=0.5 10 K/W 0.2 0.1 0.05 10 K/W -1 0 0.2 0.1 0.05 0.02 0.01 single pulse R,(K/W) 0.187 0.575 0.589 0.350 R1 1.73*10-1 2.75*10-2 2.57*10-3 2.71*10-4 R2 , (s) R,(K/W) 0.552 0.732 0.671 0.344 R1 , (s) 7.23*10-2 8.13*10-3 1.09*10-3 1.55*10-4 R2 10 K/W -1 0.02 0.01 single pulse C 1 = 1 /R 1 C 2 = 2 /R 2 C1= 1/R1 C 2 = 2 /R 2 10 K/W 10s -2 100s 1ms 10ms 100ms 10 K/W 10s -2 100s 1ms 10ms 100ms tP, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = tp / T) tP, PULSE WIDTH Figure 24. Diode transient thermal impedance as a function of pulse width (D=tP/T) Power Semiconductors 10 Rev. 1 Oct-03 IKW08T120 ^ TrenchStop Series Qrr, REVERSE RECOVERY CHARGE 500ns trr, REVERSE RECOVERY TIME 400ns 2C TJ=150C 300ns 200ns TJ=150C TJ=25C 400A/s 600A/s 800A/s 1C TJ=25C 100ns 0ns 200A/s 0C 200A/s 400A/s 600A/s 800A/s diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=600V, IF=8A, Dynamic test circuit in Figure E) diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=600V, IF=8A, Dynamic test circuit in Figure E) TJ=150C dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT Irr, REVERSE RECOVERY CURRENT 25A -600A/s -500A/s -400A/s -300A/s -200A/s -100A/s -0A/s 200A/s TJ=25C 20A TJ=25C TJ=150C 15A 10A 5A 0A 200A/s 400A/s 600A/s 800A/s 400A/s 600A/s 800A/s diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR=600V, IF=8A, Dynamic test circuit in Figure E) diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=600V, IF=8A, Dynamic test circuit in Figure E) Power Semiconductors 11 Rev. 1 Oct-03 IKW08T120 ^ TrenchStop Series TJ=25C 20A 150C 2,0V IF=15A 1,5V 8A 5A 2,5A 1,0V 10A VF, FORWARD VOLTAGE IF, FORWARD CURRENT 0,5V 0A 0V 1V 2V 0,0V -50C 0C 50C 100C VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature Power Semiconductors 12 Rev. 1 Oct-03 IKW08T120 ^ TrenchStop Series TO-247AC symbol dimensions [mm] min max 5.28 2.51 2.29 1.32 2.06 3.18 21.16 16.15 5.72 20.68 4.930 6.22 min 4.78 2.29 1.78 1.09 1.73 2.67 20.80 15.65 5.21 19.81 3.560 6.12 [inch] max 0.2079 0.0988 0.0902 0.0520 0.0811 0.1252 0.8331 0.6358 0.2252 0.8142 0.1941 0.2449 0.1882 0.0902 0.0701 0.0429 0.0681 0.1051 0.8189 0.6161 0.2051 0.7799 0.1402 0.2409 A B C D E F G H K L M N P 0.76 max 0.0299 max 3.61 0.1421 Q Power Semiconductors 13 Rev. 1 Oct-03 IKW08T120 ^ TrenchStop Series i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR Ir r m QF dir r /dt 90% Ir r m Figure C. Definition of diodes switching characteristics 1 Tj (t) p(t) r1 r2 2 n rn r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance L =180nH an d Stray capacity C =39pF. Power Semiconductors 14 Rev. 1 Oct-03 IKW08T120 ^ TrenchStop Series Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 15 Rev. 1 Oct-03 |
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