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IDP45E60 IDB45E60 Fast Switching EmCon Diode
Feature * 600 V EmCon technology * Fast recovery * Soft switching * Low reverse recovery charge * Low forward voltage * 175C operating temperature * Easy paralleling Product Summary VRRM IF VF T jmax
P-TO220-3.SMD
600 45 1.5 175
P-TO220-2-2.
V A V C
Type IDP45E60 IDB45E60
Package P-TO220-2-2.
Ordering Code Q67040-S4469
Marking D45E60 D45E60
Pin 1 C NC
PIN 2 A C
PIN 3 A
P-TO220-3.SMD Q67040-S4375
Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Repetitive peak reverse voltage Continous forward current
TC=25C TC=90C
Symbol VRRM IF
Value 600 71 47
Unit V A
Surge non repetitive forward current
TC=25C, tp=10 ms, sine halfwave
I FSM I FRM Ptot
162 111.5 W 187 106
Maximum repetitive forward current
TC=25C, tp limited by Tjmax, D=0.5
Power dissipation
TC=25C TC=90C
Operating and storage temperature Soldering temperature
1.6mm(0.063 in.) from case for 10s
Tj , Tstg TS
-55...+175 255
C C
Rev.2
Page 1
2003-07-31
IDP45E60 IDB45E60
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area 1)
Symbol min. RthJC RthJA RthJA -
Values typ. 35 max. 0.8 62 62 -
Unit
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Reverse leakage current
V R=600V, Tj=25C V R=600V, Tj=150C
Symbol min. IR VF -
Values typ. max.
Unit
A 1.5 1.5 50 3000 V 2 -
Forward voltage drop
IF=45A, T j=25C IF=45A, T j=150C
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air.
Rev.2
Page 2
2003-07-31
IDP45E60 IDB45E60
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time
V R=400V, IF=45A, diF/dt=1000A/s, Tj=25C V R=400V, IF=45A, diF/dt=1000A/s, Tj=125C V R=400V, IF=45A, diF/dt=1000A/s, Tj=150C
Symbol min. t rr I rrm Q rr S -
Values typ. max.
Unit
ns 140 185 195 23 28.1 29 1400 2650 2900 3.1 4.2 4.4 A nC -
Peak reverse current
V R=400V, IF = 45A, diF/dt=1000A/s, Tj =25C V R=400V, IF =45A, diF/dt=1000A/s, T j=125C V R=400V, IF =45A, diF/dt=1000A/s, T j=150C
Reverse recovery charge
V R=400V, IF=45A, diF/dt=1000A/s, Tj=25C V R=400V, IF =45A, diF/dt=1000A/s, T j=125C V R=400V, IF =45A, diF/dt=1000A/s, T j=150C
Reverse recovery softness factor
V R=400V, IF=45A, diF/dt=1000A/s, Tj=25C V R=400V, IF=45A, diF/dt=1000A/s, Tj=125C V R=400V, IF=45A, diF/dt=1000A/s, Tj=150C
Rev.2
Page 3
2003-07-31
IDP45E60 IDB45E60
1 Power dissipation Ptot = f (TC) parameter: Tj 175 C
195
2 Diode forward current IF = f(TC) parameter: Tj 175C
80
W A
165 150 60
P tot
135 120 105 90 75 60 45 30 15 0 25 50 75 100 125 20 40 50
IF
175
30
10
C TC
0 25
50
75
100
125
C TC
175
3 Typ. diode forward current IF = f (VF)
140
4 Typ. diode forward voltage VF = f (Tj)
2.4
A
-55C 25C 100C 150C
V
100
2
90A
80
VF
1.8 60 1.6
IF
45A
40
1.4
22,5A
20
1.2
0 0
0.5
1
1.5
V VF
2.5
1 -60
-20
20
60
100
160 C Tj
Rev.2
Page 4
2003-07-31
IDP45E60 IDB45E60
5 Typ. reverse recovery time trr = f (diF/dt) parameter: V R = 400V, T j = 125C
450
6 Typ. reverse recovery charge Qrr =f(diF/dt) parameter: VR = 400V, Tj = 125 C
4000
ns
90A 45A 22.5A
nC
90A
350
300 2500 250 2000 200 1500
Q rr
3000
45A
trr
22,5A
150
100 200
300
400
500
600
700
800
A/s 1000 di F/dt
1000 200
300
400
500
600
700
800
A/s 1000 di F/dt
7 Typ. reverse recovery current Irr = f (diF/dt) parameter: V R = 400V, T j = 125C
35
8 Typ. reverse recovery softness factor S = f(diF /dt) parameter: VR = 400V, Tj = 125C
8
A
90A 45A 22.5A
7 6.5
90A
25
Irr
6 5.5 5
45A
20
S
15
22,5A
4.5 4 3.5
10
5 200
300
400
500
600
700
800
A/s 1000 di F/dt
3 200
300
400
500
600
700
800
A/s 1000 diF/dt
Rev.2
Page 5
2003-07-31
IDP45E60 IDB45E60
9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T
10 1
IDP45E60
K/W
10 0
ZthJC
10 -1
D = 0.50 10 -2 0.20 0.10 0.05 10 -3 single pulse 0.02 0.01
10 -4 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Rev.2
Page 6
2003-07-31
IDP45E60 IDB45E60
TO-220-2-2
A P
symbol [mm] min A 9.70 15.30 0.65 3.55 2.60 9.00 13.00 17.20 4.40 0.40 B C D E max 10.10 15.90 0.85 3.85 3.00 9.40 14.00 17.80 4.80 0.60 min 0.3819 0.6024 0.0256 0.1398 0.1024 0.3543 0.5118 0.6772 0.1732 0.0157
N
dimensions [inch] max 0.3976 0.6260 0.0335 0.1516 0.1181 0.3701 0.5512 0.7008 0.1890 0.0236
D U H B V
E
F W J G
F G H J K L M N P T U V W
1.05 typ. 2.54 typ. 4.4 typ. 1.10 1.40 2.4 typ. 6.6 typ. 13.0 typ. 7.5 typ. 0.00 0.40
0.41 typ. 0.1 typ. 0.173 typ. 0.0433 0.0551 0.095 typ. 0.26 typ. 0.51 typ. 0.295 typ. 0.0000 0.0157
X L
C
M
T K
X
Rev.2
Page 7
2003-07-31
IDP45E60 IDB45E60
TO-220-3-45 (P-TO220SMD)
dimensions symbol min A B C D E F G H K L M N P Q R S T U V W X Y Z [mm] max min 9.80 10.00 1.3 typ. 1.25 1.75 0.95 1.15 2.54 typ. 0.72 0.85 5.08 typ. 4.30 1.28 9.00 4.50 1.40 9.40 [inch] max 0.3858 0.3937 0.0512 typ. 0.0492 0.0689 0.0374 0.0453 0.1 typ. 0.0283 0.0335 0.2 typ. 0.1693 0.0504 0.3543 0.1772 0.0551 0.3701
2.30 2.50 14.1 typ. 0.00 0.20 3.30 3.90 8 max 1.70 2.50 0.50 0.65 10.8 typ. 1.35 typ. 6.43 typ. 4.60 typ. 9.40 typ. 16.15 typ.
0.0906 0.0984 0.5551 typ. 0.0000 0.0079 0.1299 0.1535 8 max 0.0669 0.0984 0.0197 0.0256 0.4252 typ. 0.0532 typ. 0.2532 typ. 0.1811 typ. 0.3701 typ. 0.6358 typ.
Rev.2
Page 8
2003-07-31
IDP45E60 IDB45E60
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev.2
Page 9
2003-07-31

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