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Phototransistors
PNZ158 (PN158)
Silicon planar type
For optical control systems
2.90.25
Unit: mm
4.50.3 (2.4)
(2.4) (1.5) Not soldered
Features
* High sensitivity * Fast response: tr = 4 s (typ.) * Wide spectral sensitivity characteristics, suited for detecting various kinds of LEDs * Small size, thin side-view type package
3.90.3
(1.2) (0.9)
1.70.2 (0.8)
12.8 min.
2.8
2-1.20.3
Absolute Maximum Ratings Ta = 25C
1 2 2.54
2-0.450.15
0.450.15
Parameter Collector-emitter voltage (Base open) Emitter-collector voltage (Base open) Collector current Collector power dissipation Operating ambient temperature Storage temperature
Symbol VCEO VECO IC PC Topr Tstg
Rating 20 5 20 100 -25 to +85 -30 to +100
Unit V V mA mW C C
(2-R0.6)
(R1.2)
1: Emitter 2: Collector LSTLR102-002 Package
Electrical-Optical Characteristics Ta = 25C 3C
Parameter Photocurrent *1 Dark current Peak sensitivity wavelength Half-power angle Rise time *2 Fall time *2 Collector-emitter saturation voltage *1 Symbol ICE(L) ICEO p tr tf VCE(sat) ICE(L) = 1 mA, L = 1 000 lx VCE = 10 V VCE = 10 V The angle from which photocurrent becomes 50% VCC = 10 V, ICE(L) = 5 mA, RL = 100 Conditions VCE = 10 V, L = 500 lx Min 1.0 Typ 4.0 0.01 800 40 4 4 0.2 10 10 0.5 1.00 Max Unit A A nm s s V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Source: Tungsten (color temperature 2 856 K) *2: Switching time measurement circuit
Sig. in VCC (Input pulse) Sig. out RL (Output pulse) tr tf 90% 10% tr: Rise time tf: Fall time
50
Note) The part number in the parenthesis shows conventional part number.
Publication date: November 2004 SHE00022CED
1
PNZ158
PC Ta
120
20
ICE(L) VCE
Ta = 25C T = 2 856 K
ICE(L) L
102 VCE = 10 V Ta = 25C T = 2 856 K
Collector power dissipation PC (mW)
100
16
Photocurrent ICE(L) (mA)
80
12
1 750 lx 1 500 lx 1 250 lx 1 000 lx
Photocurrent ICE(L) (mA)
L = 2 000 lx
10
1
60
8 750 lx 4 500 lx 250 lx
10-1
40
20
100 lx 0 4 8 12 16 20 24
10-2
0 -20
0
0
20
40
60
80
100
10-3
1
10
102
103
104
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Illuminance L (lx)
ICE(L) Ta
102 VCE = 10 V T = 2 856 K
ICEO Ta
10 VCE = 10 V
Spectral sensitivity characteristics
100 VCE = 10 V Ta = 25C
Dark current ICEO (A)
1
Relative sensitivity S (%)
80
Photocurrent ICE(L) (mA)
60
L = 1 000 lx 10 500 lx
10-1
40
10-2
20
1 -40
0
40
80
120
10-3 -40
0
40
80
120
0 200
400
600
800
1 000
1 200
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Wavelength (nm)
Directivity characteristics
0 10 100
20
tr ICE(L)
103 VCC = 10 V Ta = 25C
103
tf ICE(L)
VCC = 10 V Ta = 25C
Relative sensitivity S (%)
80
30
102
102
Rise time tr (s)
60
40 50 60 70 80 90
10
Fall time tf (s)
RL = 1 k 500 100
10
RL = 1 k 500 100
40
1
1
20
10-1
10-1
10-2 -2 10
10-1
1
10
102
10-2 -2 10
10-1
1
10
102
Photocurrent ICE(L) (mA)
Photocurrent ICE(L) (mA)
2
SHE00022CED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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