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PRELIMINARY PFM18030SPECIFICATION 18051880MHz,30W,2StagePowerModule EnhancementModeLateralMOSFETs ThisversatileDCSmoduleprovidesexcellentlinearityandefficiencyina lowcostsurfacemountpackage.ThePFM18030SMincludestwostages PackageType:SurfaceMount ofamplification,alongwithinternalsenseFETsthatareonthesame silicondieastheRFdevices.ThesethermallycoupledsenseFETs PN:PFM18030SM simplifythetaskofbiastemperaturecompensationoftheoverallamplifier. ThemoduleincludesRFinput,interstage,andoutputmatchingelements. Thesourceandloadimpedancesrequiredforoptimumoperationofthe modulearemuchhigher(andsimplertorealize)thanforunmatchedSi LDMOStransistorsofsimilarperformance. Thesurfacemountpackagebaseistypicallysolderedtoaconventional PCBpadwithanarrayofviaholesforgroundingandthermalsinkingof themodule.OptimizedinternalconstructionsupportslowFETchannel temperatureforreliableoperation. PackageType:Flange PN:PFM18030F * 29dBGain * 30WattsPeakOutputPower * InternalTrackingFETs (forimprovedbiascontrol) * IS95CDMAPerformance 5WattsAverageOutputLevel 20%PowerAddedEfficiency -49dBcACPR ModuleSchematicDiagram ModuleSubstrate Q1DieCarrier Q1 Q2DieCarrier Q2 Drain2 RFOUT Output Match Lead Gate1 RFIN Lead Input Match Output Match Input Match S1 S2 SenseS1 Lead Gate2 Lead SenseS2 Lead D1 Lead Note:Additionally,thereare250KOhmresistorsconnectedinshuntwithallleads,toenhanceESDprotection. Page 1of13 Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/ Rev.3 PFM18030 ElectricalSpecification Parameter Min 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 OperatingFrequency Gain GainCompressionat Pout=30Watts GainFlatnessoverany 30MHzbandwidth DeviationfromLinear Phaseoverany30 MHzbandwidth GroupDelay ACPRwithIS95A CDMAPave=5W EfficiencyunderIS95 Protocol,Pave=5W DCDrainSupply Voltage Operating TemperatureRange (basetemperature) GainVariationversus Temperature OutputMismatch Stress Stability Thetajc(channel) QuiescentCurrents a) Q1 b) Q2 SenseFETPeriphery Ratio a) Stg1Track b) Stg2Track ESDProtection a)HumanBodyModel b)MachineModel 1805 27.5 45 18 24 40 60 Limits Typ 29.5 0.8 0.1 0.8 3.1 49 20 27 0.033 1.9 73 235 Units Max 1880 32 1.5 0.3 1.2 3.7 30 +115 30 2.1 MHz dB dB dB nanosec dBc % Volts C dB/C Watts CW dBc C/W mA mA Note1. Comments PulsedCWcompressionmeasurement (12 msecpulse,120 msecperiod,10% dutycycle). Note1. Note1 Includesdelayoftestfixture (~0.6nanosec.).Note1 Note4.Refertoapplicationsdatafor performancewithotherprotocols. Note4. TestingforconformancewithRF specificationsisat+27V. TestingforconformancewithRF specificationisat+25 C. Biasquiescentcurrentsheldconstant. VSWR10:1,allphaseangles.No degradationinoutputpowerbefore& aftertest. 0 3.0 1.7 % % 17 Class1 ClassM3 Page 2of13 Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/ Rev.3 PFM18030 ElectricalSpecification(Continued) MAXIMUMRATINGS Rating 19 DCDrainSupply a) DraintoSourceVoltage,(VGS=0),D1&D2 &TrackD1&TrackD2 b) NormalOperation(ClassABoperation) DCGateSupply a) GatetosourceVoltage(VDS=0) NormalOperation(ClassABoperation) RFInputPower MaximumPowerDissipation(T +85 C) a)Derateabove+85 Cbasetemperature. MaximumChannelOperatingTemperature StorageTemperatureRange Symbol VDS VD_SUPPLY VGS VG_SUPPLY PIN PTOTAL TCH TSTG Value +50 +30 0.5 VoltsDC VoltsDC VoltsDC VoltsDC dBm Watts Watts/C C C 20 21 22 23 24 RECOMMENDEDSOURCEANDLOADIMPEDANCES Impedance NominalSource Impedancefor OptimumOperation NominalLoad Impedancefor OptimumOperation 19- 5 Units Ohms Comments Matchedfornearoptimumlinearityandgainflatness. Impedanceislookingfromthemoduleinputleadintothe inputmatchingcircuit.Referenceplaneis0.105inchesfrom theinputend(caseedge)ofthemodule. MatchedfornearoptimumlinearityunderCDMAprotocol. Impedanceis fromthemoduleoutputleadlookingintothe outputmatchingcircuit.Referenceplaneis0.105inchesfrom theoutputend(caseedge)ofthemodule. 22+j6 Ohms SpecificationNotes: 1) Powertestingofgain,gainflatnessphaseandtimedelaymeasurementswillbeatsmallsignal.Productiontesting willbeforsmallsignalconditions(nominal0dBminputlevel)withthefrequencysweptthroughtheindicatedband. 2) Themoduleismountedinatestfixturewithexternalmatchingelementsforalltesting.Quiescentcurrentbias conditionsarethoseappropriateforminimumACPRunderCDMAprotocol.Supplyvoltageforalltestsis +27voltsDC.Testingisat+25 Cunlessotherwisespecified. 3) Thetajcismeasuredwithapackagemounting(base)tempof+85 C,andwith10WattsCWoutput. 4) Pout=5WattsaverageIS95Aprotocol:IS95ForwardLinkPPS+9CH. ACPRconditions:a)900kHzoffset,30kHzBW,b)2.75MHzoffset,1MHzBW. 5) SenseFETsarescaledversionsofthemainRFFETs,formedfromelectricallyisolatedcellsatendoftheRF structure.Currentscalesaccordingtoperiphery(thresholdvoltagesoffsetislessthan 150millivoltsbetween adjacentdevices).RF&SenseFETgatesandsourcesareDCconnected.DrainsareDCisolated.LeadsS1&S2 areDCconnectedtodrainsofsenseFETs1&2.Sourcesareconnectedtopackagebase.SenseFETsare electricallyisolatedfromtheRFsignals. Page 3of13 Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/ Rev.3 PFM18030 TypicalModulePerformance T=+25 C,unlessotherwisenoted.Dataisformoduleinatestfixturewithexternalmatchingelements.Seefollowing pagefortestfixturedetails. TypicalSmallSignalGainvs.Frequency 31 10 IM3L TypicalCW2ToneIntermodsvs.OutputPower (F1=1840,F2=1841MHz) IntermodulationDistortion(dBc) 30 20 IM3U IM5L 29 30 IM5U IM7L IM7U 28 40 27 50 26 1730 1755 1 780 1805 1830 1 855 1880 1905 1930 1955 1980 2005 60 F requency(M Hz) 70 30 31 32 33 34 35 36 37 38 39 40 41 42 43 AverageOutputPower(dBm) Input&OutputReturnLossvs.Frequency TypicalCW2ToneIntermodsvs.OutputPower 1 1 (F1=1805,F2=1806MHz) 10 IntermodulationDistortion(dBc) IM3L ReturnLoss(dB) 3 OUTPUT 5 7 9 INPUT 11 13 15 1780 20 30 40 50 60 70 30 IM3U IM5L IM5U IM7L IM7U 1805 1830 1855 1880 1905 1930 1955 Frequency(MHz) 31 32 33 34 35 36 37 38 39 40 41 42 43 AverageOutputPower(dBm) TypicalCWGainvsSweptCWOutputPower, withVariousBiasConditions(F=1840MHz) 31 TypicalCW2ToneIntermodsvs.OutputPower (F1=1880,F2=1881MHz) 10 IM3L IntermodulationDistortion(dBc) 30 Bestfor2ToneIMDs 29 20 30 40 50 60 70 30 IM3U IM5L IM5U IM7L IM7U Gain(dB) 28 27 26 25 G(52/184) 24 27 29 31 33 35 37 39 41 43 45 G(65/230) G(58/207) G(71/253) 31 32 33 34 35 36 37 38 39 40 41 42 43 CWSweptOutputPower(dBm) AverageOutputPower(dBm) Page 4of13 Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/ Rev.3 PFM18030 PFM18030SMPackageOutline PFM18030FPackageOutline Page 5of13 Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/ Rev.3 PFM18030 ModuleApplicationNotes ThePFM18030SMwasdesignedtoprovideaversatilelowcostsolutionforawidevarietyofwirelessapplications requiring30Wattpeakoutputlevels.ThishybridmodulecontainstwostagesofSiLDMOSFETamplification: anominally5Wattinputstagedrivinga30Wattoutputstage.Themoduleisoptimizedforefficient,linearoperation withEDGEandCDMAsignals.Theinputandoutputofthismodulearepartiallymatched,andrequiresourceandload impedancesofnominally19and21Ohms(muchhigherthantypicallyrequiredbyunmatchedSiLDMOSFETs). ThesesourceandloadimpedancescanbeachievedwithcompactconventionalexternalPCBcircuitry. Performanceforparticularsignalprotocolscanbeimprovedslightlybysmalladjustmentsinquiescentcurrentsand loadimpedancespresentedtothemodule.Thedatapresentedinthepreviouspageswastakenatonesetofquiescent currentsandinafixturewithsourceandloadimpedancesthatwerefixedforallmeasurements.Thedatapresentedis generallyrepresentativeoftheperformanceofthemodule - benefitsfromfurtheroptimizationinquiescentcurrentare small. InadditiontothetwoRFgainstages,thereareSenseFET(thermallytracking)devicesthatserveasoptionalDCcircuit elements.TheSenseFETsarefabricatedonthesameepimaterialwithnominallyidenticalphysicalcharacteristics(but smallergateperiphery)astheRFdevices.Thesensedevicescanbeappliedastemperaturecompensationelementsin conjunctionwithexternalbiascircuitry.Alternatively,thetwostageamplifiercanbeoperatedwiththeSenseFETs unused(S1andS2leadsfloating). Thebaseofthemoduleishighconductivitycopperof40milthickness.ItiswellmatchedtotypicalPCBmaterial,and itservesasaheatspreaderforthedevicewhenmountedas asurfacemountcomponent.Themodulethermal characteristicsweremeasuredwiththeunitsolderedtoa20milthickPCBmaterialwithanarrayofplatedviaholesfor electricalgroundingandthermalsinking.IRscansofthisconfigurationdemonstrated maximumdiechannel temperaturesof142degreesCwithaPCBbasetemperatureof+95degreesC,and10WattsCWoutputpower. Thesemodulescanbeprovidedintapeandreelconfigurationforhighvolumeapplications.Atestfixtureisavailable. TypicalPCBMountingPattern Themoduleoutlineisindicatedbydashedline(0.60X1.00inches).Thegroundpadis1.030X0.630 inches.Groundviasinthisexampleare28mildiameteron35mil(or70mil)centers.Thermalresistanceis proportionaltothethicknessofthePCboard(heightofvias),andinverselyproportionaltothetotalground holearrayperiphery(andthicknessofplatingintheholes).Thedenselyspacedviasinthislayout(on35mil spaces)arelocatedinareasofmaximumheatgeneration.Thegapbetweentheleadpadsandthegroundpad is25mils. Theaboveholepatternisanexampleofonethatmaximizesthermaltransfer.Therearenumerous alternativeapproaches.Dependingontheapplication(signalprotocol,thermalenvironment,etc.),the numberofviaholescanbereduced.Highaveragepowerapplicationsrequirethemostextensivethermal sinking. Page 6of13 Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/ Rev.3 PFM18030 RecommendedPassiveBiasCircuit ThisschematicdemonstratesamethodofapplyingtheSenseFETsinternaltothemodulethatusespassive externalcircuitry.ThecircuitmaintainsaconstantcurrentthroughtheSenseFETS,independentof temperatureofthedie.TheSenseFETsareconfiguredinthiscaseasdiodes.Thetemperaturedependence oftheVfofthediodeisverysimilartothatoftheRFFETgatevoltage,andthereforethequiescentcurrent remainsnearlyconstantoverawidetemperaturerange.Theadvantageofthiscircuitisitssimplicityand stability(avoidanceofoperationalamplifiers)underalllayoutconditions.Themainlimitationofthecircuit isthatquiescentcurrentsmustbeadjustedforeachindividualmodule(theyarenoteasilypresetwith precision). +10to +20V Gate GND +27V J1 8 7 6 5 4 3 2 1 Note:TypicalQ1diodebias=1.4mA(VG1~3.96V) TypicalQ2diodebias=2.7mA(VG2~4.21V) (basedon6/4/04measurements) C29 C28 C27 S1 C12 C11 C10 R6 S2 R5 C24 C22 C20 C23 C21 C19 C18 C17 C16 C15 Drain1 R2 C9 C8 C7 C2 RF Out C1 RF OUT PFM18030 SenseD2 Gate2 SenseD1 RFIN C4 C3 C5 R1 R3 RF Input C6 Page 7of13 Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/ Rev.3 PFM18030 PassiveBiasCircuitPartsList Designator C2 C3 C5 C4 C6 C1,C7,C19,C20 C10,C13,C14,C15, C8,C11,C16,C21 C22 C23,C9,C17,C12 C24,C18 R5 R6 R1 R3 C27 C29 C28 S1,S2 Description CAP,1.8PF0.1pF,0603,ATC600S CAP,2.0PF0.1pF,0603,ATC600S CAP,2.4PF0.1pF,0603,ATC600S CAP,4.7PF0.1pF,0603,ATC600S CAP,4.7PF0.1pF,0603,ATC600S CAP,27PF5%,0603,ATC600S CAP,27PF5%,100V(min),0603,anyvendor. CAP,470PF 10%,100V,0603,anyvendor. CAP,3300PF10%,100V,0603,MurataGRM39X7R332K100??,or equivalent. CAP,15000PF10%,100V,0805,MurataGRM40X7R153K100??, orequivalent. CAP,1500001206,50V,X7R,10% SuggestMurataGRM426X7R154K050ALorequivalent. RES,potentiometer,10Kohms,DigikeySM4W103ND Qty 1 1 1 1 1 4 4 4 1 4 2 1 1 1 0 1 1 1 2 Note:For+10Vgatesupply. RES,potentiometer,5Kohms,DigikeySM4W502ND Note:For+10Vgatesupply RES,1/16W,0603,1000ohms Notused. CAP,2.2ufSMTTANTALUM,50V(240097) CAP,10uf16VSMTTANTALUM(240096) CAP,47UF,50V,ELECTRSMT(240087) SPSTSwitch, DigikeyPNCKN1100CTND Page 8of13 Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/ Rev.3 PFM18030 TestFixture AmetalbackedPCBwithclampsforsecuringthemoduleisusedformoduleelectricaltestingandfor productdemonstration.Thefixtureissuppliedmountedtoafinnedheatsink.Thefixtureschematicis providedonthefollowingpage. ThistestfixtureusesanactivebiascircuitwhichsetsthebiascircuitthroughtheSenseFETs(configuredas FETs)andappliesthederivedgatevoltagetotheassociatedRFFETs.Thisassuresparticularquiescentbias currents,withaccuracydeterminedbytheSenseFETtoRFFETcurrentratios. Page 9of13 Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/ Rev.3 PFM18030 TestFixtureSchematic(WithActiveBiasCircuit) GND +27V +27V OpAmp J2NotUsedforDemoFixture J1 8 7 6 5 4 3 2 1 J2 8 7 6 5 4 3 2 1 RZ_FS1 RZ_FS2 C31 R12 R11 C32 R16 R13 4 5 U1 C37 R32 R31 C34 C36 R36 R33 4 C40 R14 C33 LM8261 + 1 3 2 R19 R15 C42 C41 R20 R37 R34 C35 5 LM8261 + 3 2 R35 U2 C43 R39 R40 R38 S2 D2 R17 R18 S1 D1 C28 C27 C26 C12 C11 C10 C25 C24 C22 C20 C23 C21 C19 C14 C9 C18 C17 C16 C15 Drain1 C8 C7 C2 RF Out C1 RF OUT PFM19030SM SenseD2 Gate2 SenseD1 RFIN C4 C3 C5 C6 R1 R2 RF Input Seethefollowingpagesforthepartslistandadescriptionoftheprincipleofoperation.Notethatan alternative,lesscomplexpassivebiasschemeisprovidedearlierinthisapplicationnote.Theadvantageof theactivebiasdesignisthatbiascurrentsaresetbytheRFtoSenseFETratios,andoncetheoptimum bias circuitresistor(potentiometer)valuesareestablished,thecircuitcanstayfixedformultiplemodules(thus eliminatingmodulespecificbiasalignment).Additionally,agingeffectsareminimizedbecauseofthe Page 10of13 Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/ Rev.3 PFM18030 similarbiasconditionsforSenseandRFFETs.Thedisadvantageofthisdesignisitsrelativecomplexityand theincorporationofoperationalamplifiers,forwhichstabilityispotentiallycircuitlayoutdependent. PartsListforCreeMicrowaveTestFixture Designator C2 C3 C5 C4 C6 C1,C7,C19,C20 C10,C13,C14,C15, C8,C11,C16,C21 C22 C9,C23,C17,C12 C18,C24,C25,C26, C31,C34 C27,C37 C28 C33,C35 C32,C36 C40,C41,C42,C43 R1 R2 R11,R12 R31,R32 R13,R14,R33,R34 R16,R15,R35,R36 R19,R39 R18 R38 R20,R40 R17,R37 RZ_FS1,RZ_FS2 D1,D2 S1,S2 U1,U2 Description CAP,1.8PF0.1pF,0603,ATC600S CAP,2.0PF0.1pF,0603,ATC600S CAP,2.4PF0.1pF,0603,ATC600S CAP,4.7PF0.1pF,0603,ATC600S CAP,4.7PF0.1pF,0603,ATC600S CAP,27PF5%,0603,ATC 600S CAP,27PF5%,100V(min),0603,anyvendor. CAP,470PF 10%,100V,0603,anyvendor. CAP,3300PF10%,100V,0603,MurataGRM39X7R332K100 CAP,15000PF10%,100V,0805,MurataGRM40X7R153K100 CAP,1500001206,50V,X7R,10% MurataGRM426X7R154K050AL CAP,2.2ufSMTTANTALUM,50V CAP,47UF,50V,ELECTRSMT CAP,18,000PF 10%,100V,0603 CAP,33,000PF 10%,100V,0603 CAP,1000PF 10%,100V,0603. RES,1/16W,0603,1000ohms,5% Notused RES,1/16W,0603,332Ohms,1% RES,1/16W,0603,147Ohms,1% RES,1/16W, 0603,2370Ohms,1% RES,1/16W,0603,511KOhms,1% RES,1/16W,0603,100KOhms,5% RES,1/16W,0603,3320Ohms,5% RES,1/16W,0603,2000Ohms,5% RES,1/8W,1206,1000Ohms,5% RES,potentiometer,10Kohms,DigikeySM4W103ND,11T RES,1/16W,0805,0Ohms(usedasjumpers,demofixtureonly) Zenerdiode,6.2V,DigikeyPNBZT52C6V27DICTND SPSTSwitch,DigikeyPNCKN1100CTND OpAmp,HighOutput,LM8261M5(5pin,SOT23package) Qty 1 1 1 1 1 4 4 4 1 4 6 2 1 2 2 4 1 0 2 2 4 4 2 1 1 2 2 2 2 2 2 Itisalsopossibletobiasthetwostagesinaconventionalmanner,withthetwotrackingFETdrainsleft unused(floatingorgrounded).Thebiascircuitspresentedinthisapplicationsnotearejusttwoofseveral possibilities. Page 11of13 Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/ Rev.3 PFM18030 TestFixtureActiveBiasCircuitPrinciplesofOperation Thetestfixtureoperatesoffofasinglevoltagesupply.Itcontainstwoswitchesandtwopotentiometers. Theswitchesprovideforindependenton/offfortheinputandoutputdevicesofthemodule.The potentiometersallowadjustmentofquiescentcurrentlevelofeachstage.Theadjustmentsshouldbemade withnoRFappliedtothemodule. Q1DieCarrier Q1 Input Match Output Match Vsupply S1 R1< DifferentalAmp Ids_sense Rbias Ireference PrincipalofOperationofBiasCircuitry TheprincipalofoperationofthefixturebiascircuitisdemonstratedintheaboveFigure.Thepotentiometer establishesareferencecurrent,andtheoperationalamplifieradjustsgatevoltagetomaintainthatcurrentin thesensedevice.ThesameDCgatevoltage isalsoappliedtothemain(RF)device.Sensedevicesare scaledversionsofthemain(RF)devices,onthesamedie(tofacilitatetemperaturetracking).Asthe temperatureofthediechangesduetoRFdrive(orambienttemperaturechanges),theoperationalamplifier maintainsconstantcurrentthroughtheSenseFET,andthusconstantquiescentbiasforthemain(RF)FET. NoRFsignalisappliedtotheSenseFET. Thereisaseparateindependentbiascircuitfortheinput(Q1)deviceandfortheoutputdevice(Q2)ofthe module. Experiencehasshownthisbiascircuittobeareliablemethodofmaintainingtightcontrolofquiescent currentoveroperatingtemperature,andforminimizingtheimpactofdeviceagingeffectsonamplifier performance.However,therearesomeprecautionsregardinguseofthiscircuit.Theprincipleofthecircuit isforthedifferentialamplifier(opamp)toadjustgatevoltageuntilthedesiredcurrentisachievedthrough thesenseFETs.Ifthecurrentpathisinterrupted (therebynotallowingIds_sense toflow),theoperational amplifierwillincreasegatebiasinanattempttoincreasecurrent,withthepossibilitythatthequiescentbias currentintheRFFETmayincreasebeyondasafelimit(thedevicemaybedestroyed).Thezenerdiodesin thetestfixturecircuit(D1andD2,testfixtureschematic)aresafeguardsforprohibitingexcessivegate voltagetobeappliedtothetransistors. Page 12of13 Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/ Rev.3 PFM18030 Disclaimer:Specificationsaresubjecttochangewithoutnotice.CreeMicrowave,Inc.believesthe informationcontainedwithinthisdatasheettobeaccurateandreliable.However,noresponsibilityis assumedbyCreeMicrowaveforanyinfringementofpatentsorotherrightsofthirdpartieswhichmay resultfromitsuse.Nolicenseisgrantedbyimplicationorotherwiseunderanypatentorpatentrightsof CreeMicrowave.CreeMicrowavemakesnowarranty,representationorguaranteeregardingthe suitabilityofitsproductsforanyparticularpurpose."Typical"parametersaretheaveragevalues expectedbyCreeMicrowaveinlargequantitiesandareprovidedforinformationpurposesonly.These valuescananddovaryindifferentapplications,andactualperformancecanvaryovertime.All operatingparametersshouldbevalidatedbycustomer'stechnicalexpertsforeachapplication.Cree Microwaveproductsarenotdesigned,intended,orauthorizedforuseascomponentsinapplications intendedforsurgicalimplantintothebodyortosupportorsustainlife,inapplicationsinwhichthefailure oftheCreeproductcouldresultinpersonalinjuryordeath,orinapplicationsforplanning,construction, maintenanceordirectoperationofanuclearfacility.CreeMicrowaveisatrademarkandCreeandthe CreelogoareregisteredtrademarksofCree,Inc. ContactInformation: CreeMicrowave,Inc. 160GibraltarCourt Sunnyvale,CA940891319 SheryleHenson(CreeMicrowave--MarketingManager)4089627783 TomDekker(CreeMicrowave--SalesDirector)9193135639 Page 13of13 Specificationssubjecttochangewithoutnotice.U.S.PatentNo.6,822,321 http://www.cree.com/ Rev.3 |
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