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MOSFET 110A 250V PDM1102H 108.0 PDM1102H P2HM1102H P2HM1102H P2HM1102H 108.0 Approximate Weight :220g Approximate Weight :220g Grade PDM1102H / P2HM1102H 250 VGS=0V 20 110 80 220 420 c=25 c=25 c=25 c=25 Maximum Ratings Rating Drain-Source Voltage Gate-Source Voltage Duty=50% Continuous Drain Current Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range RMS Isolation Voltage Mounting Torque D.C. Symbol VDSS VGSS ID IDM PD Tjw Tstg Viso Ftor 3.0 2.0 - Unit V V A A W 40 +150 40 +125 2000 ,AC1 Terminals to Base, AC 1 min . Module Base to Heat sink Bus bar to Main Terminals V Nm 1 240 DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) 8 DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) 12 200 DRAIN CURRENT ID (A) 10 6 160 8 120 4 6 80 4 2 40 2 0 0 2 4 6 8 DRAIN TO SOURCE VOLTAGE VDS (V) 10 0 0 4 8 12 GATE TO SOURCE VOLTAGE VGS (V) 16 0 -40 0 40 80 120 JUNCTION TEMPERATURE Tj ( ) 160 30 16 5 GATE TO SOURCE VOLTAGE VGS (V) 24 CAPACITANCE C (nF) 2 SWITCHING TIME t ( s) 0 100 200 300 400 500 TOTAL GATE CHRAGE Qg (nC) 600 12 1 18 8 0.5 12 0.2 4 6 0.1 0 1 2 5 10 20 50 DRAIN TO SOURCE VOLTAGE VDS (V) 100 0 0.05 2 5 10 20 50 100 SERIES GATE IMPEDANCE RG ( ) 200 1000 1000 200 REVERSE RECOVERY TIME trr (ns) REVERSE CURRENT IR (A) 5 10 20 50 DRAIN CURRENT ID (A) 100 200 500 SWITCHING TIME t (ns) SWITCHING TIME t (ns) 500 100 200 200 50 100 100 20 50 50 10 20 10 20 10 5 2 0 100 200 -dis/dt (A/ s) 300 400 2 5 10 20 50 DRAIN CURRENT ID (A) 100 200 NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] 2 1 0.5 0.2 0.1 0.05 0.02 0.01 -5 10 500 200 100 DRAIN CURRENT ID (A) 50 20 10 10 -4 10 -3 10 -2 10 -1 PULSE DURATION t (s) 1 10 NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] 2 1 0.5 0.2 0.1 0.05 0.02 0.01 -5 10 5 2 1 0.5 0.5 2 5 10 20 50 100 200 DRAIN TO SOURCE VOLTAGE VDS (V) 500 10 -4 10 -3 10 -2 10 -1 PULSE DURATION t (s) 1 10 |
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