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| 205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com ELECTRICAL CHARACTERISTICS: OM200F120CMD (Tc= 25C unless otherwise specified) Symbol VCES ICES IGES VGE(TH) VCE(SAT) gfs Cies Coes Cres Min. 1200 10 100 4.5 5.5 2.5 69 17 5 2 6.5 3.0 Typ. Max Unit V A A V V S nF nF nF Characteristic OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V Gate Emitter Leakage Current, VGE=+/-15V, VCE=0V ON CHARACTERISTICS Gate Threshold Voltage, VCE=VGE, IC=6mA Collector Emitter Saturation Voltage, VGE=15V, Ic=200A DYNAMIC CHARACTERISTICS Fwd. Transconductance VCE=5V, IC=200A Input Capacitance VGE=0 Output Capacitance VCE=25V Rev. Transfer Capacitance f=1.0MHz SWITCHING INDUCTIVE LOAD CHARACTERISTICS Turn-On Delay Time Rise Time VCC= 600V, IC=200A Turn-on Losses VGE=+15/-10V, RG=5.1 Turn-off Delay Time L=100H Fall Time Turn-off Losses DIODE CHARACTERISTICS Maximum Forward Voltage 50 t(on) tr Eon td(off) tf Eoff 175 140 28 720 120 15 400 nS nS mJ nS nS mJ 850 Reverse Recovery Characteristics IF=200A, Tj=25C Tj=125C VR=600V, Tj=25C IF=200A, Tj=125C dI/dt=-1500A/S Tj=25C Tj=125C Tj=25C Tj=125C VF Qrr Irr trr 2.0 1.8 10 15 75 95 100 150 2.8 2.3 V C A nS THERMAL AND MECHANICAL CHARACTERISTICS Thermal Resistance, Junction to Case (Per IGBT) Thermal Resistance, Junction to Case (Per Diode) Maximum Junction Temperature Isolation Voltage Screw Torque Mounting Screw Torque (M6) Terminals Screw Torque (M3) Terminals Module Weight RthJC RthJC TjMAX VisRMS - 15 10 6 320 0.07 0.12 150 2500 20 12 8 C/W C/W C V in-lb in-lb in-lb Grams 12/08/98 Rev. C 1 205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com OM200F120CMD IGBT Collector Current vs. Collector-emitter Voltage Tj=25C 400 Vge=13V Vge=15V Vge=11V 400 IGBT Collector Current vs. Collector-emitter Voltage Tj=- 55C Vge=15V Vge=13V Vge=11V 300 Ic(A) 300 Ic(A) 200 200 Vge=9V 100 100 Vge=9V Vge=7V Vge=7V 0 0 2 4 Vce(V) 6 8 10 12 0 0 2 4 6 Vce(V) 8 10 12 Switching energy vs Temperature Vce =600V,Ic=200A IGBT Collector Current vs. Collector-emitter Voltage Tj=125C 400 Vge=13V Vge=11V 50 Vge=15V 300 40 Eoff Eon Ic(A) 200 Vge=9V Energyf (mJ) Vge=7V Vge=5V 10 12 30 20 100 10 0 0 2 4 Vce(V) 6 8 0 0 25 50 75 T(C) 100 125 150 Switching energy vs Gate Resistor(Rg) Vce =600V,Ic=200A, Tj=125C Switching energy vs Collector current (Ic) Vce =600V,Tj=25C 50 50 40 40 Eoff Eon Energy (mJ) 20 Energyf (mJ) 30 30 20 10 Eoff Eon 10 0 0 5 10 Rg(Ohms) 15 20 25 0 0 25 50 75 100 Ic(A) 125 150 175 200 12/08/98 Rev. C 2 205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com OM200F120CMD Diode Forward Current vs. Forward Voltage Vge =0V 400 Tj=-55C 300 Tj=25C Tj=125C If (A) 200 100 0 0 0.5 1 Vf (V) 1.5 2 2.5 12/08/98 Rev. C 3 205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com OM200F120CMD MECHANICAL OUTLINE G2 E2 C2E1 E2 C1 E1 G1 EQUIVALENT CIRCUIT C1 G1 E1 C2E1 G2 E2 E2 12/08/98 Rev. C 4 |
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