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NUS2501W6 Integrated NPN Digital Transistor with Switching Diode Array
This new option of integrated devices is designed to replace a discrete solution of a single transistor with three switching diodes. BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT technology eliminates these individual components by integrating them into a single device, therefore integration of a single BRT with three switching diodes results in a significant reduction of both system cost and board space. This new device is offered in the SC-88 surface mount package.
Features http://onsemi.com
1 6
2
R2 R1
5
* Single SC-88 Surface Mount Package * Moisture Sensitivity Level 1
Benefits
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4
* Integration of Six Discrete Components * Integrated Solution Offers Cost and Space Savings * Integrated Solution Improves System Reliability
Applications
6 6 1 SC-88 (SOT-363) CASE 419B 1
MARKING DIAGRAM
* * * *
Wireless Phones Handheld Products Notebook Computers LCD Display Panels
LGd
MAXIMUM RATINGS (TA = 25C unless otherwise noted.)
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Diode Reverse Voltage Diode Peak Reverse Voltage Diode Forward Current Diode Peak Forward Current Symbol VCBO VCEO IC VR VRM IF IFM Value 50 50 100 80 80 100 300 Unit Vdc Vdc mAdc Vdc Vdc mAdc mAdc
LG = Specific Device Code d = Date Code
ORDERING INFORMATION
Device NUS2501W6T1 Package SC-88 Shipping 3000 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2004
January, 2004 - Rev. P1
Publication Order Number: NUS2501W6/D
NUS2501W6
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.)
Characteristic OFF CHARACTERISTICS Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 1) Diode Reverse Breakdown Voltage Diode Reverse Voltage Leakage Current Diode Forward Voltage Diode Capacitance ON CHARACTERISTICS (Note 1) DC Current Gain Collector-Emitter Saturation Voltage Output Voltage(on) Output Voltage(off) Input Resistor Resistor Ratio 1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2%. hFE VCE(sat) VOL VOH R1 R1/R2 VCE = 10 V, IC = 5.0 mA IC = 10 mA, IB = 0.3 mA VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW - - 80 - - 4.9 32.9 0.8 140 - - - - 1.0 - 0.25 0.2 - 61.1 1.2 - Vdc Vdc Vdc kW - ICBO ICEO IEBO V(BR)CBO V(BR)CEO V(BR) IR VF CD VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6.0 V, IC = 0 IC = 10 mA, IE = 0 IC = 2.0 mA, IB = 0 IR = 100 mA VR = 70 V IF = 100 mA VR = 6.0 V, f = 1.0 MHz - - - 50 50 80 - - - - - - - - - - - - 100 500 0.1 - - - 0.1 1.2 3.5 nAdc nAdc mAdc Vdc Vdc Vdc mAdc Vdc pF Symbol Test Conditions Min Typ Max Unit
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NUS2501W6
TYPICAL TRANSISTOR ELECTRICAL CHARACTERISTICS
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED)
VCE = 10 V TA = 75C 25C -25C
1 TA = -25C 0.1 25C 75C
100
0.01
0
20 40 IC, COLLECTOR CURRENT (mA)
50
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 1. VCE(sat) versus IC
Figure 2. DC Current Gain
1 0.8 Cob , CAPACITANCE (pF) 0.6 0.4 0.2 0
IC, COLLECTOR CURRENT (mA)
f = 1 MHz IE = 0 V TA = 25C
100 75C 10 1 0.1
25C TA = -25C
0.01 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 3. Output Capacitance
Figure 4. Output Current versus Input Voltage
100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 5. Input Voltage versus Output Current
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NUS2501W6
TYPICAL DIODE ELECTRICAL CHARACTERISTICS
100 IF, FORWARD CURRENT (mA) TA = 85C 10 TA = -40C IR , REVERSE CURRENT (A) 10 TA = 150C TA = 125C
1.0
0.1
TA = 85C TA = 55C
1.0
TA = 25C
0.01 TA = 25C 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50
0.1
0.2
0.4
0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS)
1.2
0.001
Figure 6. Forward Voltage
1.75 CD, DIODE CAPACITANCE (pF)
Figure 7. Leakage Current
1.5
1.25
1.0
0.75
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
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NUS2501W6
PACKAGE DIMENSIONS
SC-88 (SOT-363) CASE 419B-02 ISSUE T
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02.
A G
6
5
4
S
1 2 3
-B-
D 6 PL 0.2 (0.008)
M
DIM A B C D G H J K N S
INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --- 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087
MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --- 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20
B N
M
J C
H
K
SOLDER FOOTPRINT*
2.4 0.094
1.9 0.074 0.7 0.028
0.95 0.037 0.95 0.037
1.0 0.039
SCALE 10:1
mm inches
*For information on soldering specifications, please refer to our Soldering Reference Manual, SOLDERRM/D.
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NUS2501W6
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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NUS2501W6/D

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