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NTE912 Integrated Circuit General Purpose Transistor Array
(Three Isolated Transistors and One Differentially-Connected Transistor Pair) Description: The NTE912 consists of five general-purpose silicon NPN transistors on a common monolithic substrate in a 14-Lead DIP type package. Two of the transistors are internally connected to form a differentially-connected pair. The transistors of the NTE912 are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits. However, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching. Features: D Two Matched Pairs of Transistors: VBE matched 5mV Input Offset Current 2A Max. @ IC = 1mA D 5 General Purpose Monolithic Transistors D Operation from DC to 120MHz D Wide Operating Current Range D Low Noise Figure: 3.2dB Typ @ 1kHz Applications: D General Use In All Types of Signal Processing Systems Operating Anywhere in the Frequency Range from DC to VHF D Custom Designed Differential Amplifiers D Temperature Compensated Amplifiers Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Power Dissipation (TA +55C), PD Each Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Total Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW Derate Above 55C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.67mW/C Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector Substrate Voltage (Note 1), VCIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Lead Temperature (During Soldering, 1/16" 1/32" from case, 10sec max), TL . . . . . . . . . . . +265C Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The substrate (Pin13) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Static Characteristics Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Collector Substrate Breakdown Voltage Emitter Base Breakdown Voltage Collector Cutoff Current V(BR)CBO IC = 10A, IE = 0 V(BR)CEO IC = 1mA, IB = 0 V(BR)CIO ICBO ICEO Static Forward Current Transfer Ratio hFE IC = 10A, ICI = 0 VCB = 10V, IE = 0 VCE = 10V, IB = 0 VCE = 3V IC = 10mA IC = 1mA IC = 10A Input Offset Current for Matched Pair Q1 and Q2. |I IO1- I IO2| Base Emitter Voltage VBE VCE = 3V, IC = 1mA VCE = 3V IE = 1mA IE = 10mA Magnitude of Input Offset Voltage for Differential Pair |V BE1 - V BE2| Magnitude of Input Offset Voltage for Isolated Transistors |V BE3 - V BE4| |V BE - V BE | |V BE - V BE |
4 5 5 3
Symbol
Test Conditions
Min
Typ
Max
Unit
20 15 20 5 - - - 40 - - - - - -
60 24 60 7 0.002 - 100 100 54 0.3 0.715 0.800 0.45 0.45
- - - - 40 0.5 - - - 2.0 - - 5.0 5.0
V V V V nA A
V(BR)EBO IE = 10A, IC = 0
A V V mV mV
VCE = 3V, IC = 1mA VCE = 3V, IC = 1mA
Temperature Coefficient of Base Emitter Voltage Collector Emitter Saturation Voltage Temperature Coefficient: Magnitude of Input-Offset Voltage
VBE T VCES |VIO| T
VCE = 3V, IC = 1mA IB = 1mA, IC = 10mA VCE = 3V, IC = 1mA
- - -
-1.9 0.23 1.1
- - -
mV/C V V/C
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Dynamic Characteristics Low-Frequency Noise Figure Low-Frequency, Small-Signal Equivalent Circuit Characteristics: Forward Current Transfer Ratio Short-Circuit Input Impedance Open-Circuit Output Impedance Open-Circuit Reverse Voltage Transfer Ratio Admittance Characteristics: Forward Transfer Admittance Input Admittance Output Admittance NF f = 1kHz, VCE = 3V, IC = 100A, Source Resistance = 1k - 3.25 - dB Symbol Test Conditions Min Typ Max Unit
hfe hie hoe hre
f = 1kHz, VCE = 3V, IC = 1mA
- - - -
110 3.5 15.6 1.8x10-4
- - - - k mhos
Yfe Yie Yoe
f = 1kHz, VCE = 3V, IC = 1mA
- - -
31-j1.5 0.3+j0.04 0.001+j0.03
- - -
Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified)
Parameter Dynamic Characteristics (Cont'd) Gain-Bandwidth Product Emitter Base Capacitance Collector Base Capacitance Collector Substrate Capacitance fT CEB CCB CCI VCE = 3V, IC = 3mA VEB = 3V, IE = 0 VCB = 3V, IC = 0 VCS = 3V, IC = 0 300 - - - 550 0.6 0.58 2.8 - - - - pF pF pF Symbol Test Conditions Min Typ Max Unit
Pin Connection Diagram 14 Q5 Vout 13 Substrate/Q5 Vin 12 Q5 Vin 11 Q4 Vout 10 Q4 Vin 9 8 Q4 Vin Q3 Vout
Q1 Vout Q1 Vin Q1/Q2 Vin Q2 Bias Q2 Vin Q3 Vin Q3 Vin
1 2 3 4 5 6 7
14
8
1
7
.785 (19.95) Max .200 (5.08) Max
.300 (7.62)
.100 (2.45) .600 (15.24)
.099 (2.5) Min

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