NTE592 Silicon Diode, General Purpose, High Voltage
Description: The NTE592 is a silicon epitaxial high-speed diode in an SOT-23 type surface mount package. This device is intended for switching and general purposes applications. Absolute Maximum Ratings: Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Non-Repetitive Peak Forward Current (t = 1s), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Average Rectified Forward Current (Average over any 20ms period, Note 1), IF(Av) . . . . . . 200mA DC Forward Current (TA +25C, Note 2), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mA Total Power Dissipation (TA +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Ambient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W Thermal Resistance, Tab-to-Soldering Points, RthTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280K/W Thermal Resistance, Soldering Points-to-Ambient, RthSA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90K/W Note 1. Measured under pulse conditions: Pulse Time = tp 0.3ms. Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm). Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter Forward Voltage Reverse Breakdown Voltage Reverse Current Differential Resistance Diode Capacitance Reverse Recovery Time (When switched from IF = 30mA to IR = 30mA Symbol VF V(BR)R IR rdiff Cd trr Test Conditions IF = 100mA IF = 200mA IR = 100A, Note 1 & 3 VR = 200V VR = 200V, TJ = +150C IF = 10mA VR = 0, f = 1MHz measured at IR = 3mA, RL = 100 Min - - 250 - - - - - Typ - - - - - 5 - - Max 1.00 1.25 - 100 100 - 5 50 Unit V V V nA A pF ns
Note 1. Measured under pulse conditions: Pulse Time = tp 0.3ms. Note 3. At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage limited to 275V.
.016 (0.48)
K A N.C.
.098 (2.5) Max
.037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3)
.043 (1.1)
.007 (0.2)
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