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| NTE274 (NPN) & NTE275 (PNP) Silicon Complementary Transistors Darlington Power Amplifier, Switch Description: The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low-frequency switching and hammer driver applications. Features: D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector-Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A D Collector-Emitter Sustaining Voltage: VCEO(sus) = 80V Min D Monolithic Construction with Built-In Base-Emitter Shunt Resistors Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mA Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.286W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current VCEO(sus) IC = 50mA, IB = 0 ICEO ICER Emitter Cutoff Current IEBO VCE = 40V, IB = 0 VCE = 80V, VEB(off) = 1.5V VCB = 80V, VEB(off) = 1.5V, TA = +150C VBE = 5V, IC = 0 80 - - - - - - - - - - 0.5 0.5 5.0 2.0 V mA mA mA mA Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter ON Characteristics DC Current Gain hFE VCE(sat) VBE(sat) VBE(on) |hfe| VCE = 3V, IC = 2A VCE = 3V, IC = 4A Collector-Emitter Saturation Voltage IC = 2A, IB = 8mA IC = 4A, IB = 40mA Base-Emitter Saturation Voltage Base-Emitter ON Voltage Dynamic Characteristics Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio Output Capacitance NTE274 NTE275 Small-Signal Current Gain NTE274 hfe IC = 1.5A, VCE = 3V, f = 1kHz IC = 1.5A, VCE = 3V, f = 1MHz 4.0 - - IC = 4A, IB = 40mA VCE = 3V, IC = 2A 750 100 - - - - - - - - - - 18000 - 2.0 3.0 4.0 2.8 V V V V Symbol Test Conditions Min Typ Max Unit Cob VCB = 10V, IE = 0, f = 0.1MHz - - 300 - - - 120 200 - pF pF C B .062 (1.57) .485 (12.3) Dia .295 (7.5) E .031 (0.78) Dia .960 (24.3) .360 (9.14) Min Base NTE275 .147 (3.75) Dia (2 Places) .580 (14.7) C B .145 (3.7) R Max .200 (5.08) Collector/Case Emitter E |
Price & Availability of NTE275
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