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| NTE2564 (NPN) & NTE2565 (PNP) Complementary Silicon Transistors High Current Switch Features: D Low Collector Emitter Saturation Voltage D High Current Capacity Applications: D Relay Drivers D High Speed Inverters D Converters Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Collector Power Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector Emitter Saturation Voltage NTE2564 NTE2565 Symbol ICBO IEBO hFE fT VCE(sat) Test Conditions VCB = 40V, IE = 0 VEB = 4V, IC = 0 VCE = 2V, IC = 1A VCE = 2V, IC = 4A VCE = 5V, IC = 1A IC = 3A, IB = 150mA Min - - 100 30 - - - Typ - - - - 120 - - Max 0.1 0.1 280 - - 0.4 0.5 MHz V V Unit mA mA Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Turn-On Time Storage Time NTE2564 NTE2565 Fall Time tf Symbol Test Conditions Min 60 30 6 - - - - Typ - - - 0.1 0.5 0.2 1.6 Max - - - - - - - Unit V V V s s s s Collector Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 V(BR)CEO IC = 1mA, RBE = V(BR)EBO IE = 1mA, IC = 0 ton tstg VCC = 10V, VBE = -5V, 20IB1 = -20IB2 = IC = 4A, Pulse Width = 20s, Duty Cycle 1%, Note 1 Note 1. For NTE2565, the polarity is reversed. .402 (10.2) .035 (0.9) .177 (4.5) .051 (1.3) .346 (8.8) B C E .433 (11.0) .019 (0.5) .100 (2.54) |
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