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NTE2320 Silicon NPN/PNP Transistor Quad, General Purpose Switch, Amp (Complementary Pair)
Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25C, Each Die, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.18mW/C Total Device Dissipation (TA = +25C, Four Die Equal Power, Note 1), PD . . . . . . . . . . . . . . . . 1.25W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mW/C Total Device Dissipation (TC = +25C, Each Die, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/C Total Device Dissipation (TC = +25C, Four Die Equal Power, Note 1), PD . . . . . . . . . . . . . . . . 3.0W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Reistance, Junction-to-Ambient, RthJA Each Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193C/W Effective, 4 Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100C/W Thermal Reistance, Junction-to-Case, RthJC Each Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125C/W Effective, 4 Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41.6C/W Coupling Factors, Junction-to-Ambient Q1-Q4 or Q2-Q3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60% Q1-Q2 or Q3-Q4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24% Coupling Factors, Junction-to-Case Q1-Q4 or Q2-Q3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30% Q1-Q2 or Q3-Q4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20% Note 1. Voltage and current are negative for PNP transistors.
Electrical Characteristics: (TA = +25C, Note 1 unless otherwise specified)
Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 3) DC Current Gain hFE VCE = 10V, IC = 1mA VCE = 10V, IC = 10mA VCE = 10V, IC = 150mA VCE = 10V, IC = 300mA Collector-Emitter Saturation Voltage VCE(sat) VBE(sat) IC = 150mA, IB = 15mA IC = 300mA, IB = 30mA Base-Emitter Saturation Voltage IC = 150mA, IB = 15mA IC = 300mA, IB = 30mA Small-Signal Characteristics Current Gain-Bandwidth Product Output Capacitance NPN PNP Input Capacitance NPN PNP Switching Characteristics Turn-On Time Turn-Off Time ton toff VCC = 30V, VEB = 0.5V, IC = 150mA, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA - - 30 225 - - ns ns Cibo VEB = 2V, IC = 0, f = 1MHz fT Cobo VCE = 20V, IC = 50mA, f = 100MHz, Note 3 VCB = 10V, IE = 0, f = 1MHz 200 350 - MHz 50 75 100 20 - - - - - - - - - - - - - - - - 0.4 01.4 1.3 2.0 V V V V V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO IC = 10mA, IB = 0, Note 2 IC = 10A, IE = 0 IE = 10A, IC = 0 VCB = 50V, IE = 0 VEB = 3V, IC = 0 30 60 5 - - - - - - - - - - 30 30 V V V nA nA Symbol Test Conditions Min Typ Max Unit
- - - -
6.0 4.5 20 17
8.0 8.0 30 30
pF pF pF pF
Note 1. Voltage and current are negative for PNP transistors. Note 2. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating. Note 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
Pin Connection Diagram
Q1 (NPN) Collector Q1 (NPN) Base Q1 (NPN) Emitter N.C. Q2 (PNP) Emitter Q2 (PNP) Base Q2 (PNP) Collector
1 2 3 4 5 6 7
14 Q4 (NPN) Collector 13 Q4 (NPN) Base 12 Q4 (NPN) Emitter 11 N.C.
10 Q3 (PNP) Emitter 9 8 Q3 (PNP) Base Q3 (PNP) Collector
14
8
1
7
.785 (19.95) Max .200 (5.08) Max
.300 (7.62)
.100 (2.45) .600 (15.24)
.099 (2.5) Min

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