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| NTE2315 Silicon NPN Transistor Fast Switching Power Darlington Description: The NTE2315 is a silicon epitaxial planer NPN power Darlington transistor in a TO220 type package with an integrated base-emitter speed-up diode designed for use in high voltage, high current, fast switching applications. In particular, the NTE2315 can be used in horizontal output stages of 110 CRT video displays and is primarily intended for large screen displays. Absolute Maximum Ratings: Collector-Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector-Emitter Voltage (VBE = -6V), VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector-Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Emitter-Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Damper Diode Peak Forward Current, IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Total Power Dissipation (TC +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperatuere Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.08C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Collector Cutoff Current Symbol ICES ICEV Emitter Cutoff Current Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain IEBO VCE(sat) VBE(sat) hFE Test Conditions VCE = 400V, VBE = 0 VCE = 400V, VBE = -6V VEB = 6V, IC = 0 IC = 5A, IB = 50mA, Note 1 IC = 5A, IB = 50mA, Note 1 IC = 3A, VCE = 5V Min - - - 200 - - - Typ - - - - - - 3500 Max 100 100 3 - -1.5 2.0 - Unit A A mA V V V VCEO(sus) IC = 100mA, IB = 0, Note 1 Note 1. Pulse test: Pulse Duration = 300s, Duty Cycle = 1.5%. Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Damper Diode Forward Voltage Turn-Off Time Resistive Load Turn-On Time Storage Time Fall Time ton ts tf IC = 5A, IB1 = 50mA, IB2 = -500mA, VCC = 100V - - - 0.35 0.55 0.20 - - - s s s Symbol VF toff Test Conditions IF = 4A, Note 1 IC = 5A, IB1 = 50mA Min - - Typ - 0.4 Max 2 1.0 Unit V s Note 1. Pulse test: Pulse Duration = 300s, Duty Cycle = 1.5%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max C B D2 R1 R2 E .070 (1.78) Max .500 (12.7) Min D1 .250 (6.35) Max Base .100 (2.54) Emitter Collector/Tab |
Price & Availability of NTE2315
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