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| NTE154 Silicon NPN Transistor High Voltage Video Output Description: The NTE154 is a silicon NPN transistor in a TO39 type package designed for use as a video output to drive a color CRT. Features: D High Voltage: VCEO = 300V Min @ IC = 5mA D Low Capacitance: Cob = 3pF Max @ VCB = 20V D High Frequency: ft = 50MHz Min @ IC = 15mA D High Power Dissipation: PD = 7W @ TC = +25C Absolute Maximum Ratings: (Note 1) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector to Emitter Voltage (Note 2), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Total Power Dissipation (Note 3, Note 4), PD TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Lead Temperature (During Soldering, 60sec), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300C Note Note Note Note 1. 2. 3. 4. These ratings are limiting values above which the serviceability of this device may be impaired. This rating refers to a high current point where collector to emitter voltage is lowest. These ratings are steady state limits. These ratings give a maximum junction temperature of +200C and junction to case thermal resistance of +25C/W (derating factor of 40mW/C); junction to ambient thermal resistance of +175C/W (derating factor of 5.71mW/C). Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Cutoff Current Symbol V(BR)CBO V(BR)EBO ICBO IEBO hFE Test Conditions IC = 100A, IE = 0 IE = 100A, IC = 0 IE = 0, VCB = 200V IE = 0, VCB = 200V, TA = +125C Emitter Cutoff Current DC Current Gain IC = 0, VEB = 6V IC = 1mA, VCE = 20V IC = 10mA, VCE = 20V, Note 5 IC = 30mA, VCE = 20V, Note 5 Collector Emitter Sustaining Voltage Base Emitter Saturating Voltage Collector Emitter Saturating Voltage High Frequency Current Gain VCEO(sus) VBE(sat) VCE(sat) hfe IC = 5mA, IB = 0, Note 2, Note 5 IC = 20mA, IB = 2mA, Note 5 IC = 20mA, IB = 2mA, Note 5 IC = 15mA, VCE = 150V, f = 20MHz IC = 3mA, VCE = 270V, f = 20MHz IC = 30mA, VCE = 30V, f = 20MHz, RL = 9k Collector Base Capacitance Emitter Base Capacitance Ccb Ceb IE = 0, VCB = 20V IC = 0, VEB = 500mV Min 300 7 - - - 20 40 40 300 - - 2.5 2.0 2.0 - - Typ - - 1.0 0.2 1.0 50 100 100 - 0.74 0.35 4.0 2.5 4.0 2.5 45 Max - - 100 5.0 100 - - - - 0.85 1.0 - - - 3.0 70 pF pF V V V Unit V V nA A nA Note 2. This rating refers to a high current point where collector to emitter voltage is lowest. Note 5. Pulse Conditions: Length = 300s, Duty Cycle = 1%. .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793) |
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