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| MICRO ELECTRO NICS MWB51TA-DI MWB51TB-DI MWB51TK-DI ULTRA HIGH BRIGHTNESS WHITE LED LAMP DESCRIPTION MWB51TX-DI is an ultra high brightness InGaN/GaN white LED lamp encapsulated in a 5mm diameter clear transparent lens . ABSOLUTE MAXIMUM RATINGS Power Dissipation @ Ta=25C Continuous Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature (1/16" from body) ELECTRO-OPTICAL CHARACTERISTICS PARAMETER Forward Voltage Reverse Breakdown Voltage MWB51TA-DI Luminous Intensity (Ta=25C) TYP 3.5 MAX 4.5 UNIT V V mcd mcd mcd degree degree degree 125mW 30mA 5V -20 to +80C -30 to +100C 260C for 5 sec. CONDITIONS IF=20mA IR=100A 3800 IF=20mA MWB51TB-DI 3500 IF=20mA MWB51TK-DI 1800 IF=20mA MWB51TA-DI 20 IF=20mA Viewing Angle MWB51TB-DI 30 IF=20mA MWB51TK-DI 70 IF=20mA Chromaticity Coordinates 0.30 IF=20mA 0.30 IF=20mA CAUTION REVC Static eletricity and surge damages the LED ,It is recommended to use a wrist band or anti-eletrostatic glove when handling the LED . All devices,equipment and machinery must be properly grounded. MICRO ELECTRONICS LTD. 7/F, Enterprise Square Three,39 Wang Chiu Road, Kowloon Bay, Kowloon, Hong Kong. Tel : (852) 2343 0181 Fax: (852) 2341 0321 Website : www.microelectr.com.hk SYMBOL MIN VF BVR 5 IV 2500 IV 2000 IV 1000 2 1/2 2 1/2 2 1/2 x y 15/8/2003 |
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