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| 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSASC150H45A 45 Volts 150 Amps Features * * * * * * * * Platinum/Tungsten schottky barrier for low forward voltage drop Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic surface mount power package Low package inductance Very low thermal resistance TXV-level (MSASC150H45AV) or S-level (MSASC150H45AS) screening i.a.w. Microsemi Internal Procedure PS 11.50 available LOW VOLTAGE DROP SCHOTTKY DIODE Maximum Ratings @ 25 C (unless otherwise specified) DESCRIPTION Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, Tc 135C derating, forward current, Tc 135C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Peak Repetitive Reverse Surge Current, tp= 1s, f= 1kHz Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case SYMBOL VRRM VRWM VR IF(ave) dIF/dT IFSM IRRM Tj Tstg JC MAX. 45 45 45 150 (3.75) 500 2 -65 to +175 -65 to +175 0.25 UNIT Volts Volts Volts Amps Amps/C Amps Amp C C C/W Mechanical Outline Datasheet# MSC0876.PDF MSASC150H50A Electrical Parameters DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, pw= 300 s d/c 2% SYMBOL IR25 IR100 IR125 VF1 VF2 VF3 VF4 VF5 VF6 VF7 VF8 VF9 VF10 Cj1 Cj2 BVR CONDITIONS VR= 45 Vdc, Tc= 25C VR= 45 Vdc, Tc= 100C VR= 45 Vdc, Tc= 125C IF= 20A, Tc= 25C IF= 50A, Tc= 25C IF= 100A, Tc= 25C IF= 150A, Tc= 25C IF= 50A, Tc= -55C IF= 50A, Tc= 125C IF= 100A, Tc= 125C IF= 10 mA, Tc= 25C IF= 50 mA, Tc= 25C IF= 100 mA, Tc= 25C VR= 10 Vdc VR= 5 Vdc IR= 5 mA, Tc= 25C IR= 5 mA, Tc= -55C MIN TYP. 1 125 500 400 500 650 770 580 420 590 135 175 195 4500 6400 55 50 MAX 10 400 450 565 730 900 670 500 UNIT mA mA mV mV mV mV mV mV mV mV mV mV pF pF V V Junction Capacitance Breakdown Voltage 4900 45 45 Datasheet# MSC0876.PDF |
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