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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF9030M/D
The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. * Typical Performance at 945 MHz, 26 Volts Output Power -- 30 Watts PEP Power Gain -- 20 dB Efficiency -- 41% (Two Tones) IMD -- -31 dBc * Integrated ESD Protection * Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts (CW) Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface Mount. * TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. * TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Symbol RJC
MRF9030MR1 MRF9030MBR1
945 MHz, 30 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 1265-08, STYLE 1 TO-270-2 PLASTIC MRF9030MR1
CASE 1337-03, STYLE 1 TO-272-2 PLASTIC MRF9030MBR1
Value 65 + 15, - 0.5 139 0.93 - 65 to +150 175
Unit Vdc Vdc Watts W/C C C
THERMAL CHARACTERISTICS
Max 1.08 Unit C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Charge Device Model MRF9030MR1 MRF9030MBR1 Class 1 (Minimum) M2 (Minimum) C7 (Minimum) C6 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology Per JESD 22-A113 Rating 3
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 6
MOTOROLA RF Motorola, Inc. 2003 DEVICE DATA
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MRF9030MR1 MRF9030MBR1 1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) VGS(th) VGS(Q) VDS(on) gfs 2 3 -- -- 2.9 3.8 0.23 2.7 4 5 0.4 -- Vdc Vdc Vdc S
Freescale Semiconductor, Inc...
Drain-Source On-Voltage (VGS = 10 Vdc, ID = 0.7 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss Coss Crss -- -- -- 49 27 1.2 -- -- -- pF pF pF
FUNCTIONAL TESTS (In Motorola Test Fixture)
Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps 18 20 -- dB
37
41
--
%
IMD
--
-31
-28
dBc
IRL
--
-13
-9
dB
Gps
--
20
--
dB
--
40.5
--
%
IMD
--
-31
--
dBc
IRL
--
-12
--
dB
MRF9030MR1 MRF9030MBR1 2
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
VGG + C8 C7 L1 L2 C15 B1 B2 VDD + C16 + C17 + C18
RF INPUT
C5 Z1 C1 C2 C3 C4 C6 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 DUT Z11
C9 Z12 Z13 Z14 Z15 Z16 Z17 C14 C10 C11 C12 C13 Z18
RF OUTPUT
Freescale Semiconductor, Inc...
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10
0.260 0.240 0.500 0.200 0.330 0.140 0.040 0.090 0.370 0.290 0.130 0.210
x 0.060 Microstrip x 0.060 Microstrip x 0.100 Microstrip x 0.270 Microstrip x 0.270 Microstrip x 0.270 x 0.520, Taper x 0.520 Microstrip x 0.520 Microstrip x 0.520 Microstrip (MRF9030MR1) x 0.520 Microstrip (MRF9030MBR1) x 0.520 Microstrip (MRF9030MR1) x 0.520 Microstrip (MRF9030MBR1)
Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Board
0.360 x 0.270 Microstrip 0.050 x 0.270 Microstrip 0.110 x 0.060 Microstrip 0.220 x 0.060 Microstrip 0.100 x 0.060 Microstrip 0.870 x 0.060 Microstrip 0.240 x 0.060 Microstrip 0.340 x 0.060 Microstrip Taconic RF-35-0300, r = 3.5
Figure 1. 930-960 MHz Broadband Test Circuit Schematic
Table 1. 930 - 960 MHz Broadband Test Circuit Component Designations and Values
Part B1 B2 C1, C7, C14, C15 C2 C3, C11 C4, C12 C5, C6 C8, C16, C17 C9, C10 C13 C18 L1, L2 WB1, WB2 PCB Description Short Ferrite Bead, Surface Mount Long Ferrite Bead, Surface Mount 47 pF Chip Capacitors, B Case 0.6-4.5 Variable Capacitor, Gigatrim 3.9 pF Chip Capacitors, B Case 0.8-8.0 Variable Capacitors, Gigatrim 6.8 pF Chip Capacitors, B Case 10 F, 35 V Tantulum Chip Capacitors 10 pF Chip Capacitors, B Case 1.8 pF Chip Capacitor, B Case (MRF9030MR1) 0.6-4.5 Variable Capacitor, Gigatrim (MRF9030MBR1) 220 F Electrolytic Chip Capacitor 12.5 nH Coilcraft Inductors 20 mil Brass Shim (0.250 x 0.250) Etched Circuit Board Value, P/N or DWG 95F786 95F787 100B470JP 500X 44F3360 100B3R6BP 500X 44F3360 100B7R5JP 500X 93F2975 100B100JP 500X 100B1R8BP 44F3360 14F185 A04T-5 RF-Design Lab 900 MHz 250/Viper Rev 02 Manufacturer Newark Newark ATC Newark ATC Newark ATC Newark ATC ATC Newark Newark Coilcraft RF-Design Lab DSelectronics
MOTOROLA RF DEVICE DATA
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MRF9030MR1 MRF9030MBR1 3
Freescale Semiconductor, Inc.
C18
C8 VGG
B1 C7 C15 B2 C16 C17
VDD
C1 C2
L1
C5 CUT OUT AREA
C4 WB1 C3 C6
C9 WB2 C10
L2
C14
C11
C12
C13
Freescale Semiconductor, Inc...
900 MHz Rev 02
Figure 2. 930-960 MHz Broadband Test Circuit Component Layout (MRF9030MR1)
C18 B2 VDD C7 C15 L1 C1 C2 C3 C5 WB1 CUT OUT AREA C4 C6 WB2 C9 C10 L2 C14 C11 C12 C13 C16 C17
C8 VGG
B1
MRF9030M
Figure 3. 930-960 MHz Broadband Test Circuit Component Layout (MRF9030MBR1)
MRF9030MR1 MRF9030MBR1 4
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
h , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) -10 -12 -14 -16 -18 22 21 G ps , POWER GAIN (dB) 20 19 18 17 16 15 14 930 935 940 IRL IMD Gps 50 45 40 35 -30 -32 VDD = 26 Vdc -34 Pout = 30 W (PEP) -36 IDQ = 250 mA Two-Tone, 100 kHz Tone Spac -38 ing 945 950 955 960
f, FREQUENCY (MHz)
Freescale Semiconductor, Inc...
Figure 4. Class AB Broadband Circuit Performance
IMD, INTERMODULATION DISTORTION (dBc)
21.5 21 G ps , POWER GAIN (dB) 20.5 20 300 mA 250 mA 200 mA VDD = 26 Vdc f1 = 945 MHz f2 = 945.1 MHz 1 10 100
-15 -20 -25 -30 -35 -40 -45 -50 -55 0.1 250 mA 1 IDQ = 200 mA 300 mA VDD = 26 Vdc 375 mA f1 = 945 MHz f2 = 945.1 MHz 10 100
IDQ = 375 mA
19.5 19
18.5 0.1
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Power Gain versus Output Power
Figure 6. Intermodulation Distortion versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
-10 -20 -30 -40 -50 -60 -70 -80 0.1
G ps , POWER GAIN (dB)
3rd Order
18 16 14 12 10 0.1 1 10 VDD = 26 Vdc IDQ = 250 mA f = 945 MHz
40 30 20 10 0 100
5th Order 7th Order
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Intermodulation Distortion Products versus Output Power
Figure 8. Power Gain and Efficiency versus Output Power
MOTOROLA RF DEVICE DATA
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MRF9030MR1 MRF9030MBR1 5
, DRAIN EFFICIENCY (%)
VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz f2 = 945.1 MHz
22 20 Gps
IRL, INPUT RETURN LOSS (dB)
60 50
Freescale Semiconductor, Inc.
20 G ps , POWER GAIN (dB) 18 16 14 12 10 0.1 IMD 1 10 Gps 40 20 0 -20 -40 -60 100 , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 22 60
VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 9. Power Gain, Efficiency and IMD versus Output Power
Freescale Semiconductor, Inc...
MRF9030MR1 MRF9030MBR1 6
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
Zo = 5 Zsource f = 930 MHz f = 960 MHz Zload f = 960 MHz
f = 930 MHz
VDD = 26 V, IDQ = 250 mA, Pout = 30 Watts (PEP) f MHz 930 945 960 Zsource 1.07 + j0.160 1.14 + j0.385 1.17 + j0.170 Zload 3.53 - j0.20 3.41 - j0.24 3.60 - j0.17
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Zload was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion.
Note:
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 10. Series Equivalent Input and Output Impedance (MRF9030MR1)
MOTOROLA RF DEVICE DATA
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MRF9030MR1 MRF9030MBR1 7
Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
Zo = 5 Zsource f = 960 MHz Zload f = 960 MHz
f = 930 MHz
f = 930 MHz
VDD = 26 V, IDQ = 250 mA, Pout = 30 Watts (PEP) f MHz 930 945 960 Zsource 1.0 - j0.18 1.0 - j0.10 1.0 - j0.03 Zload 3.05 - j0.09 3.00 - j0.07 2.95 - j0.03
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Zload was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion.
Note:
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 11. Series Equivalent Input and Output Impedance (MRF9030MBR1)
MRF9030MR1 MRF9030MBR1 8
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
NOTES
Freescale Semiconductor, Inc...
MOTOROLA RF DEVICE DATA
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MRF9030MR1 MRF9030MBR1 9
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
B
E1 E4
2X
D3
2X
PIN ONE ID
aaa D aaa
M
M
DA
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D1" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D1" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETER MINED AT DATUM PLANE -H-. 5. DIMENSION b1 DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE b1 DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. DIMENSIONS "D" AND "E2" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .003 PER SIDE. DIMENSIONS "D" AND "E2" DO INCLUDE MOLD MISMATCH AND ARE DETER MINED AT DATUM PLANE -D-. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 aaa INCHES MIN MAX .078 .082 .039 .043 .040 .042 .416 .424 .378 .382 .290 .320 .016 .024 .436 .444 .238 .242 .066 .074 .150 .180 .058 .066 .231 .235 .025 BSC .193 .199 .007 .011 .004 MILLIMETERS MIN MAX 1.98 2.08 0.99 1.09 1.02 1.07 10.57 10.77 9.60 9.70 7.37 8.13 0.41 0.61 11.07 11.28 6.04 6.15 1.68 1.88 3.81 4.57 1.47 1.68 5.87 5.97 0.64 BSC 4.90 5.06 0.18 0.28 0.10
DA
b1
2X
D1
Freescale Semiconductor, Inc...
E
A
E5 E3
EXPOSED HEATSINK AREA PIN 1
PIN 2
D2
PIN 3
c1 H A1 A2
DATUM PLANE
NOTE 7
MRF9030MR1 MRF9030MBR1 10
CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC
BOTTOM VIEW F
ZONE J
A E2 E5
2X
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
D
CASE 1265-08 ISSUE G TO-270-2 PLASTIC MRF9030MR1
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
B E1 A
2X
aaa
M
r1 CAB
DRAIN ID
GATE LEAD
DRAIN LEAD
D1
2X
b1 aaa
M
CA
D
2
Freescale Semiconductor, Inc...
E
c1
H
DATUM PLANE
F ZONE "J"
A
A1 A2 7 Y E2 Y
SEATING PLANE
C
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE -H- IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. CROSSHATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 E E1 E2 F b1 c1 r1 aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .928 .932 .810 BSC .438 .442 .248 .252 .241 .245 .025 BSC .193 .199 .007 .011 .063 .068 .004 MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 23.57 23.67 20.57 BSC 11.12 11.23 6.30 6.40 6.12 6.22 0.64 BSC 4.90 5.05 .18 .28 1.60 1.73 .10
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 1337-03 ISSUE B TO-272-2 PLASTIC MRF9030MBR1
MOTOROLA RF DEVICE DATA
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EEEE EEEE EEEE EEEE EEEE EEEE EEEE EEEE EEEE EEEE EEEE EEEE EEEE
E2 VIEW Y-Y
PIN 3
1
NOTE 8
MRF9030MR1 MRF9030MBR1 11
Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2003 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors
MRF9030MR1 MRF9030MBR1 12
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MOTOROLA RF DEVICE DATA
MRF9030M/D

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