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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF9030/D
The RF Sub - Micron MOSFET Line
RF Power Field Effect Transistors
Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. * Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power -- 30 Watts PEP Power Gain -- 19 dB Efficiency -- 41.5% IMD -- - 32.5 dBc
N - Channel Enhancement - Mode Lateral MOSFETs
MRF9030LR1 MRF9030LSR1
945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs
Freescale Semiconductor, Inc...
* Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. * Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal.
CASE 360B - 05, STYLE 1 NI - 360 MRF9030LR1
CASE 360C - 05, STYLE 1 NI - 360S MRF9030LSR1
MAXIMUM RATINGS
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C MRF9030LR1 MRF9030LSR1 Storage Temperature Range Operating Junction Temperature Tstg TJ Characteristic Thermal Resistance, Junction to Case MRF9030LR1 MRF9030LSR1 Symbol RJC Symbol VDSS VGS PD Value 68 - 0.5, + 15 92 0.53 117 0.67 - 65 to +150 200 Unit Vdc Vdc Watts W/C
C C
THERMAL CHARACTERISTICS
Max 1.9 1.5 Unit C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 4
MOTOROLA RF Motorola, Inc. 2003 DEVICE DATA
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MRF9030LR1 MRF9030LSR1 1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) VGS(th) VGS(Q) VDS(on) gfs 2 -- -- -- 2.9 3.8 0.19 3 4 -- 0.4 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Freescale Semiconductor, Inc...
Drain - Source On - Voltage (VGS = 10 Vdc, ID = 0.7 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss Coss Crss
-- -- --
49.5 26.5 1
-- -- --
pF pF pF (continued)
MRF9030LR1 MRF9030LSR1 2
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted)
Characteristic FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 18 19 -- dB Symbol Min Typ Max Unit
37
41.5
--
%
IMD
--
- 32.5
- 28
dBc
IRL
--
- 15.5
-9
dB
Freescale Semiconductor, Inc...
Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Power Output, 1 dB Compression Point (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Gps
--
19
--
dB
--
41.5
--
%
IMD
--
- 33
--
dBc
IRL
--
- 14
--
dB
P1dB
--
30
--
W
Gps
--
19
--
dB
--
60
--
%
No Degradation In Output Power
MOTOROLA RF DEVICE DATA
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MRF9030LR1 MRF9030LSR1 3
Freescale Semiconductor, Inc.
VGG + C7 C8 C14 B1 B2 VDD
+ C15
+ C16
+ C17
L1 RF INPUT
C5
C9
L2 RF OUTPUT
Z1 C1
Z2
Z3
Z4
Z5
Z6
Z7
DUT
Z8
Z9
Z10
Z11
Z12 C13
Z13
C2
C3
C4
C6
C10
C11
C12
Freescale Semiconductor, Inc...
B1 B2 C1, C8, C13, C14 C2, C4 C3 C5, C6 C7, C15, C16 C9, C10 C11 C12 C17 L1, L2 Z1 Z2
Short Ferrite Bead Long Ferrite Bead 47 pF Chip Capacitors, B Case 0.8 pF to 8.0 pF Trim Capacitors 3.9 pF Chip Capacitor, B Case 7.5 pF Chip Capacitors, B Case 10 F, 35 V Tantalum Capacitors 10 pF Chip Capacitors, B Case 9.1 pF Chip Capacitor, B Case 0.6 pF to 4.5 pF Trim Capacitor 220 F, 50 V Electrolytic Capacitor 12.5 nH Surface Mount Inductors 0.260 x 0.060 Microstrip 0.240 x 0.060 Microstrip
Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 PCB
0.500 x 0.100 Microstrip 0.215 x 0.270 Microstrip 0.315 x 0.270 Microstrip 0.160 x 0.270 x 0.520, Taper 0.285 x 0.520 Microstrip 0.140 x 0.270 Microstrip 0.450 x 0.270 Microstrip 0.250 x 0.060 Microstrip 0.720 x 0.060 Microstrip 0.490 x 0.060 Microstrip 0.290 x 0.060 Microstrip Taconic RF - 35 - 0300, 30 mil, r = 3.55
Figure 1. 945 MHz Broadband Test Circuit Schematic
C7 VDD VGG C8 C9 L1 RF INPUT C1 C2 C3 C5 C4 C6 C14 L2 C15 C16
C17
C13 CUT OUT AREA C10 C11 C12
RF OUTPUT
MRF9030 900 MHz Rev -02
Figure 2. 945 MHz Broadband Test Circuit Component Layout
MRF9030LR1 MRF9030LSR1 4
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
Gps VDD = 26 Vdc Pout = 30 W (PEP) IDQ = 250 mA Two -Tone, 100 kHz Tone Spac- ing , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 20 19 G ps , POWER GAIN (dB) 18 17 16 15 14 13 12 930 IMD IRL 50 45 40 35 -30 -32 -34 -36 -38 960
-10 -12 -14 -16 -18
935
940
945
950
955
f, FREQUENCY (MHz)
Freescale Semiconductor, Inc...
Figure 3. Class AB Broadband Circuit Performance
20 19.5 G ps , POWER GAIN (dB) 19 18.5 18 17.5 17 1 10 Pout, OUTPUT POWER (WATTS) PEP VDD = 26 Vdc f1 = 945 MHz, f2 = 945.1 MHz 100 IDQ = 375 mA
IMD, INTERMODULATION DISTORTION (dBc)
-20
VDD = 26 Vdc f1 = 945 MHz, f2 = 945.1 MHz
300 mA 250 mA 200 mA
-30 IDQ = 200 mA -40 300 mA -50 375 mA -60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 250 mA
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
0 -10 -20 -30 -40 -50 5th Order -60 -70 1 7th Order 10 Pout, OUTPUT POWER (WATTS) PEP 100 3rd Order VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz, f2 = 945.1 MHz G ps , POWER GAIN (dB)
22 20 18 16 14 12 10 0.1 VDD = 26 Vdc IDQ = 250 mA f = 945 MHz
IRL, INPUT RETURN LOSS (dB)
60 50 40 30 20 10 0 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. , DRAIN EFFICIENCY (%)
Gps
Figure 6. Intermodulation Distortion Products versus Output Power
Figure 7. Power Gain and Efficiency versus Output Power
MOTOROLA RF DEVICE DATA
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MRF9030LR1 MRF9030LSR1 5
Freescale Semiconductor, Inc.
Gps 18 G ps , POWER GAIN (dB) 16 14 12 10 8 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 IMD VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz, f2 = 945.1 MHz 40 20 0 -20 -40 -60 , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 20 60
Figure 8. Power Gain, Efficiency and IMD versus Output Power
Freescale Semiconductor, Inc...
MRF9030LR1 MRF9030LSR1 6
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
Zo = 5 Zsource f = 930 MHz Zload f = 930 MHz f = 960 MHz f = 960 MHz
VDD = 26 V, IDQ = 250 mA, Pout = 30 W PEP f MHz 930 945 960 Zsource 1.34 - j0.1 1.36 - j0.2 1.4 - j0.14 Zload 3.175 + j0.09 3.1 + j0.08 3.0 + j0.05
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 9. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
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MRF9030LR1 MRF9030LSR1 7
Freescale Semiconductor, Inc.
NOTES
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MRF9030LR1 MRF9030LSR1 8
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
NOTES
Freescale Semiconductor, Inc...
MOTOROLA RF DEVICE DATA
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MRF9030LR1 MRF9030LSR1 9
Freescale Semiconductor, Inc.
NOTES
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MRF9030LR1 MRF9030LSR1 10
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
2X
B
G
1
Q aaa
M
TA
M
B
M
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.795 0.805 0.225 0.235 0.125 0.175 0.210 0.220 0.055 0.065 0.004 0.006 0.562 BSC 0.077 0.087 0.220 0.250 0.355 0.365 0.357 0.363 0.125 0.135 0.227 0.233 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF
3 (FLANGE) 2X
B
2
D bbb M T A
2X M
K
(LID)
B
M
R
ccc N ccc
M
M
TA
M
B
M
(LID)
TA C
M
B
M
H
F
Freescale Semiconductor, Inc...
E
(INSULATOR)
S
T
(INSULATOR)
SEATING PLANE
aaa TA
M
M
TA
M
B
M
DIM A B C D E F G H K M N Q R S aaa bbb ccc
M
bbb
M
B
M
A
A
CASE 360B - 05 ISSUE F NI - 360 MRF9030LR1
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
A B
(FLANGE)
A
1 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY.
(FLANGE)
B
2 2X
D
M
2X
K
M
bbb
TA
M
B
(LID)
R
ccc
(LID)
M
TA
M
B F
M
N
H
M
ccc E
TA
M
B
M
C PIN 3 bbb
M
(INSULATOR)
S
(INSULATOR)
M
T
M
SEATING PLANE M
aaa
M
TA
M
B
M
DIM A B C D E F H K M N R S aaa bbb ccc
INCHES MIN MAX 0.375 0.385 0.225 0.235 0.105 0.155 0.210 0.220 0.035 0.045 0.004 0.006 0.057 0.067 0.085 0.115 0.355 0.365 0.357 0.363 0.227 0.23 0.225 0.235 0.005 REF 0.010 REF 0.015 REF
MILLIMETERS MIN MAX 9.53 9.78 5.72 5.97 2.67 3.94 5.33 5.59 0.89 1.14 0.10 0.15 1.45 1.70 2.16 2.92 9.02 9.27 9.07 9.22 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF
TA
B
CASE 360C - 05 ISSUE D NI - 360S MRF9030LSR1
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
MOTOROLA RF DEVICE DATA
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MRF9030LR1 MRF9030LSR1 11
Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2003 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors
MRF9030LR1 MRF9030LSR1 12
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MRF9030/D MOTOROLA RF DEVICE DATA

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