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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF5P20180/D
The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistor
Designed for W-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. * Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 2 x 800 mA, f1 = 1955 MHz, f2 = 1965 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz and f2 + 5 MHz. Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz, Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Output Power -- 38 Watts Avg. Power Gain -- 14 dB Efficiency -- 26% IM3 -- -37.5 dBc ACPR -- -41 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Qualified Up to a Maximum of 32 VDD Operation * In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
N-Channel Enhancement-Mode Lateral MOSFET
MRF5P20180R6
1990 MHz, 38 W AVG., 2 x W-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFET
Freescale Semiconductor, Inc...
CASE 375D-04, STYLE 1 NI-1230
MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value 65 -0.5, +15 407 2.3 -65 to +150 200 120 Unit Vdc Vdc Watts W/C C C Watts
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 120 W CW Case Temperature 80C, 38 W CW Symbol RJC Max 0.43 0.43 Unit C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 1
MOTOROLA RF Motorola, Inc. 2003 DEVICE DATA
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MRF5P20180R6 1
Freescale Semiconductor, Inc.
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) M3 (Minimum) C7 (Minimum)
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS (1) Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 850 mAdc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 1.7 -- pF VGS(th) VGS(Q) VDS(on) gfs 2.5 -- -- -- 2.7 3.6 0.26 5 3.5 -- 0.3 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Freescale Semiconductor, Inc...
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA, f1 = 1932.5 MHz, f2 = 1942.5 MHz and f1 = 1977.5 MHz, f2 = 1987.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA, f1 = 1932.5 MHz, f2 = 1942.5 MHz and f1 = 1977.5 MHz, f2 = 1987.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA, f1 = 1932.5 MHz, f2 = 1942.5 MHz and f1 = 1977.5 MHz, f2 = 1987.5 MHz; IM3 measured over 3.84 MHz BW @ f1 -10 MHz and f2 +10 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA, f1 = 1932.5 MHz, f2 = 1942.5 MHz and f1 = 1977.5 MHz, f2 = 1987.5 MHz; ACPR measured over 3.84 MHz BW @ f1 - 5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA, f1 = 1932.5 MHz, f2 = 1942.5 MHz and f1 = 1977.5 MHz, f2 = 1987.5 MHz) Gps 12.5 14 -- dB
23
26
--
%
IM3
--
-37.5
-35
dBc
ACPR
--
-41
-38
dBc
IRL
--
-16
-9
dB
(1) Each side of device measured separately. Part is internally matched both on input and output. (2) Measurements made with device in push-pull configuration.
MRF5P20180R6 2
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
VGG R1 R2 + C14 C10 C8 Z13 Z7 Z1 Z3 Z2 Z4 C1 Z5 Z6 C2 DUT Z8 C3 Z14 Z10 Z12 Z16 Z20 C5 R4 + C15 Z18 C11 C9 C7 C13 + C18 + C19 + C21 VDD Z22 Z9 Z11 Z15 Z19 C4 Z21 Z23 Z17 C6 C12 + C16 + C17 + C20 VDD
RF INPUT
Z24
Z25
RF OUTPUT
Freescale Semiconductor, Inc...
VGG
R3
Z1 Z2 Z3 Z4 Z5, Z24 Z6, Z23 Z7, Z8 Z9, Z10
0.081 x 1.126 Microstrip 0.079 x 0.138 Microstrip 0.081 x 0.091 Microstrip 0.081 x 0.117 Microstrip 0.134 x 0.874 Microstrip 0.081 x 2.269 Microstrip 0.081 x 0.118 Microstrip 0.081 x 0.079 Microstrip
Z11, Z12 Z13, Z14 Z15, Z16 Z17, Z18 Z19, Z20 Z21, Z22 Z25 PCB
0.341 x 0.945 Microstrip 0.035 x 0.913 Microstrip 0.581 x 0.823 Microstrip 0.059 x 1.057 Microstrip 0.081 x 0.046 Microstrip 0.081 x 0.126 Microstrip 0.081 x 0.793 Microstrip Taconic TLX8-0300, 0.030, r = 2.55
Figure 1. MRF5P20180 Test Circuit Schematic Table 1. MRF5P20180 Test Circuit Component Designations and Values
Part C1 C2, C3, C4, C5, C6, C7 C8, C9 C10, C11, C12, C13 C14, C15, C16, C17, C18, C19 C20, C21 R1, R2, R3, R4 Description 1.8 pF 100B Chip Capacitor 10 pF 100B Chip Capacitors 6.8 pF 100B Chip Capacitors 10 nF 200B Chip Capacitors 22 F, 35 V Tantalum Capacitors 220 F, 63 V Electrolytic Capacitors 10 kW Chip Resistors (1206) Value, P/N or DWG 100B1R8BW 100B100GW 100B6R8CW 200B103MW TAJE226M035 13668221 Manufacturer ATC ATC ATC ATC AVX Philips
MOTOROLA RF DEVICE DATA
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MRF5P20180R6 3
Freescale Semiconductor, Inc.
MRF5P20180 Rev 1
VGG
R1
R2
C14
C10 C8
C12 C16 C17 C6
VDD
C20 C2 C1 CUT OUT AREA C4
STRAP
C3
C5
Freescale Semiconductor, Inc...
C21 C9 VGG R3 R4 C15 C11 C7 C13 C18 C19 VDD
Figure 2. MRF5P20180 Test Circuit Component Layout
MRF5P20180R6 4
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) -10 -15 -20 -25 -30 -35 2400 mA IRL, INPUT RETURN LOSS (dB) 15 14 13 G ps , POWER GAIN (dB) 12 11 9 8 7 6 IM3 IRL 10 Gps VDD = 28 Vdc, Pout = 38 W (Avg.), IDQ = 1600 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) 40 35 30 25 20 -20 -25 -30 -35
-40 ACPR 5 -45 1840 1860 1880 1900 1920 1940 1960 1980 2000 2020 2040 2060 2080 f, FREQUENCY (MHz)
Freescale Semiconductor, Inc...
Figure 3. 2-Carrier W-CDMA Broadband Performance
16 15.5 G ps , POWER GAIN (dB) 15 14 13 12 11.5 11 1 14.5 13.5 12.5 IDQ = 2400 mA 2000 mA 1600 mA 1200 mA 800 mA VDD = 28 Vdc f1 = 1955 MHz, f2 = 1965 MHz Two-Tone Measurements, 10 MHz Tone Spacing 10 100 1000 IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc)
-20 -25 -30 -35 -40 -45 -50 -55 -60 1
VDD = 28 Vdc f1 = 1955 MHz, f2 = 1965 MHz Two-Tone Measurements, 10 MHz Tone Spacing IDQ = 800 mA
2000 mA 1200 mA 10 1600 mA 100 1000
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two-Tone Power Gain versus Output Power
Figure 5. Third Order Intermodulation Distortion versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
-20 -25 -30 -35 -40 -45 -50 -55 -60 0.1 5th Order 7th Order VDD = 28 Vdc, Pout = 180 W (PEP), IDQ = 1600 mA Two-Tone Measurements, Center Frequency = 1960 MHz 1 10 100 3rd Order Pout , OUTPUT POWER (dBm)
58 57 56 55 54 53 52 51 50 49 48 47 46 45 44
P3dB = 54 dBm (251 W) P1dB = 53.5 dBm (224 W)
Ideal
Actual
VDD = 28 Vdc, IDQ = 1600 mA Pulsed CW, 5 sec(on), 1 msec(off) Center Frequency = 1960 MHz 30 32 34 36 38 40 42 44 46
TWO-TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products versus Tone Spacing
Figure 7. Pulse CW Output Power versus Input Power
MOTOROLA RF DEVICE DATA
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MRF5P20180R6 5
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 35 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS, Avg.) W-CDMA 100 VDD = 28 Vdc, IDQ = 1600 mA f1 = 1955 MHz, f2 = 1965 MHz 2 x W-CDMA 10 MHz @ 3.84 MHz Channel Bandwidth Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) -20 -25 IM3 (dBc), ACPR (dBc) -30 IM3 ACPR Gps -35 -40 -45 -50 -55 -20 -30 -40 -50 -60 (dB) -70 -80 -90 -100 -110 -120 -25 -ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW -IM3 @ 3.84 MHz BW -20 -15 -10 -5 0 5 10 +IM3 @ 3.84 MHz BW 15 20 25 3.84 MHz Channel BW
f, FREQUENCY (MHz)
Freescale Semiconductor, Inc...
Figure 8. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
Figure 9. 2-Carrier W-CDMA Spectrum
100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001
1010 MTBF FACTOR (HOURS x AMPS 2 ) 0 2 4 6 8 10
109
108
107 100
120
140
160
180
200
220
PEAK-TO-AVERAGE (dB)
TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTBF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTBF factor by ID2 for MTBF in a particular application.
Figure 10. CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal
Figure 11. MTBF Factor versus Junction Temperature
MRF5P20180R6 6
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
f = 1930 MHz Zload* f = 1990 MHz Zo = 25 f = 1990 MHz
Freescale Semiconductor, Inc...
f = 1930 MHz
Zsource
VDD = 28 V, IDQ = 2 x 800 mA, Pout = 38 W Avg. f MHz 1930 1960 1990 Zsource 6.54 - j16.04 9.70 - j17.92 13.88 - j20.46 Zload 4.06 - j5.56 3.70 - j5.48 3.64 - j5.76
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
-
Output Matching Network
Z source Z
+ load
Figure 12. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
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MRF5P20180R6 7
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
Q bbb B
2 M
2X
A
A G4 L
1
TA
M
B
M
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. DIM A B C D E F G H K L M N Q R S aaa bbb ccc INCHES MIN MAX 1.615 1.625 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 1.400 BSC 0.079 0.089 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.120 0.130 0.355 0.365 0.365 0.375 0.013 REF 0.010 REF 0.020 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 41.02 41.28 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 35.56 BSC 2.01 2.26 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 3.05 3.30 9.01 9.27 9.27 9.53 0.33 REF 0.25 REF 0.51 REF
3 4X
4
K aaa
M
4X
(FLANGE) M
B
D
TA
B
M
ccc
M
TA
(LID)
M
B
M
Freescale Semiconductor, Inc...
ccc
M
TA N (LID)
M
B
M
R
H C
F
E
PIN 5 M (INSULATOR) bbb
M
T
SEATING PLANE
(INSULATOR)
S
bbb
M
TA
M
B
M
TA
M
B
M
CASE 375D-04 ISSUE C NI-1230
STYLE 1: PIN 1. 2. 3. 4. 5.
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2003 HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors
MRF5P20180R6 8
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MOTOROLA RF DEVICE DATA
MRF5P20180/D

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