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| MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF429/D NPN Silicon RF Power Transistor Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. * Specified 50 Volt, 30 MHz Characteristics -- Output Power = 150 W (PEP) Minimum Gain = 13 dB Efficiency = 45% * Intermodulation Distortion @ 150 W (PEP) -- IMD = - 32 dB (Max) * Diffused Emitter Resistors for Superior Ruggedness * 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR @ 150 W CW MRF429 150 W (LINEAR), 30 MHz RF POWER TRANSISTOR NPN SILICON CASE 211-11, STYLE 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Withstand Current -- 10 s Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO IC -- PD Tstg Value 50 100 4.0 16 20 233 1.33 - 65 to +150 Unit Vdc Vdc Vdc Adc Adc Watts W/C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.75 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO 50 100 100 4.0 -- -- -- -- -- -- -- -- Vdc Vdc Vdc Vdc (continued) (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1994 MRF429 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 10 30 80 -- DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 50 Vdc, IE = 0, f = 1.0 MHz) Cob -- 220 300 pF FUNCTIONAL TESTS Common-Emitter Amplifier Gain (VCC = 50 Vdc, Pout = 150 W (PEP), IC(max) = 3.32 Adc, f = 30; 30.001 MHz) Output Power (VCE = 50 Vdc, f = 30; 30.001 MHz) Collector Efficiency (VCC = 50 Vdc, Pout = 150 W (PEP), IC(max) = 3.32 Adc, f = 30, 30.001 MHz) Intermodulation Distortion (1) (VCE = 50 Vdc, Pout = 150 W (PEP), IC = 3.32 Adc) Electrical Ruggedness (VCC = 50 Vdc, Pout = 150 W CW, f = 30 MHz, VSWR 30:1 at all Phase Angles) GPE 13 15 -- dB Pout 150 45 -- -- -- -- W (PEP) % IMD -- - 35 - 32 dB No Degradation in Output Power NOTE: 1. To Mil-Std-1311 Version A, Test Method 2204, Two Tone, Reference each Tone. R1 + BIAS - + C3 C4 - L2 DUT RF INPUT C2 L1 L3 L4 CR1 C8 L5 + C9 C10 50 Vdc - RF OUTPUT C6 R3 C1 R2 C5 C7 C1, C2, C7 -- 170 - 780 pF, Arco 469 C3, C8, C9 -- 0.1 F, 100 V Erie C4 -- 500 F @ 6.0 V C5 -- 9.0 - 180 pF, Arco 463 C6 -- 80 - 480 pF, Arco 466 C10 -- 30 F, 100 V R1 -- 10 , 10 Watt R2 -- 10 , 1.0 Watt R3 -- 5.0 - 3.3 1/2 Watt Carbon Resistors in Parallel CR1 -- 1N4997 L1 -- 3 Turns, #16 Wire, 5/16 I.D., 5/16 Long L2 -- 10 H Molded Choke L3 -- 12 Turns, #16 Enameled Wire Closewound, 1/4 I.D. L4 -- 5 Turns, 1/8 Copper Tubing, 9/16 I.D., 3/4 Long L5 -- 10 Ferrite Beads -- Ferroxcube #56-590-65/3B Figure 1. 30 MHz Test Circuit Schematic MRF429 2 MOTOROLA RF DEVICE DATA 250 VCC = 50 V 40 V 150 28 V 100 Pout , OUTPUT POWER (WATTS PEP) Pout , OUTPUT POWER (WATTS CW) f = 30 MHz ICQ = 150 mA 250 f = 30, 30.001 MHz ICQ = 150 mA IMD = d3 200 200 IMD = - 30 dB 150 - 35 dB 100 50 50 0 0 2 4 6 Pin, INPUT POWER (WATTS) 8 10 0 20 30 40 50 VCC, SUPPLY VOLTAGE (VOLTS) 60 Figure 2. Output Power versus Input Power Figure 3. Output Power versus Supply Voltage 30 350 f = 30.000 MHz ICQ = 150 mA VCC = 50 V G PE , POWER GAIN (dB) 25 Pout , (WATTS CW) 300 20 250 15 10 0 1 2 4 VCC = 50 V ICQ = 150 mA Pout = 150 W 200 TC = 50C 150 100C 7 15 f, FREQUENCY (MHz) 30 60 100 100 1 3 5 10 30 50 OUTPUT VSWR Figure 4. Power Gain versus Frequency Figure 5. RF Safe Operating Area (SOAR) VCC = 30 V 200 15 V f T (MHz) 150 IMD, INTERMODULATION DISTORTION (dB) 250 - 25 - 30 d3 d5 VCC = 50 V f = 30, 30.001 MHz - 35 100 - 40 50 - 45 0 0 10 5 IC, COLLECTOR CURRENT (AMPS) 14 - 50 0 20 40 60 80 100 120 Pout, OUTPUT POWER (WATTS PEP) 140 160 Figure 6. fT versus Collector Current Figure 7. IMD versus Pout MOTOROLA RF DEVICE DATA MRF429 3 5000 Cout , PARALLEL EQUIVALENT OUTPUT CAPACITANCE (pF) Rout , PARALLEL EQUIVALENT OUTPUT RESISTANCE (OHMS) VCC = 50 V ICQ = 150 mA Pout = 150 W PEP 20 VCC = 50 V ICQ = 150 mA Pout = 150 W PEP 4000 16 3000 12 2000 8 1000 0 1 2 4 7 15 f, FREQUENCY (MHz) 30 60 100 4 0 1 2 4 7 15 f, FREQUENCY (MHz) 30 60 100 Figure 8. Output Capacitance versus Frequency Figure 9. Output Resistance versus Frequency 90 60 30 15 VCC = 50 V ICQ = 150 mA Pout = 150 W PEP f MHz 2.0 4.0 7.0 15 30 60 90 Zin Ohms 7.15 - j2.40 4.20 - j2.25 2.55 - j1.75 1.60 - j1.15 1.10 - j0.70 0.78 - j0.30 0.67 - j0.10 7.0 4.0 f = 2.0 MHz Zo = 10 Figure 10. Series Equivalent Impedance MRF429 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS A U M 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Q M 4 R B 2 3 D K J H C E SEATING PLANE DIM A B C D E H J K M Q R U STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 --- 45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730 MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 --- 45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54 EMITTER BASE EMITTER COLLECTOR CASE 211-11 ISSUE N MOTOROLA RF DEVICE DATA MRF429 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 MRF429 6 *MRF429/D* MRF429/D MOTOROLA RF DEVICE DATA |
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