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SEMICONDUCTOR TECHNICAL DATA
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The RF Line
NPN Silicon High-Frequency Transistor
. . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. * Specified 28 Volt, 400 MHz Characteristics -- Output Power = 1.0 Watt Power Gain = 15 dB Min Efficiency = 45% Typ * Emitter Ballast and Low Current Density for Improved MTBF * Common Emitter for Improved Stability
MRF313
1.0 W, 400 MHz HIGH-FREQUENCY TRANSISTOR NPN SILICON
CASE 305A-01, STYLE 1
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 30 40 3.0 150 6.1 35 -65 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 28.5 Unit C/W
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 20 Vdc, IB = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICEO 30 35 35 3.0 -- -- -- -- -- -- -- -- -- -- 1.0 Vdc Vdc Vdc Vdc mAdc (continued)
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ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 100 mAdc, VCE = 10 Vdc) hFE 20 60 150 --
DYNAMIC CHARACTERISTICS
Current-Gain -- Bandwidth Product (IC = 100 mAdc, VCE = 20 Vdc, f = 200 MHz) Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) fT Cob -- -- 2.5 3.5 -- 5.0 GHz pF
FUNCTIONAL TESTS
Common-Emitter Amplifier Power Gain (1) (VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz) Series Equivalent Input Impedance (VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz) Series Equivalent Output Impedance (VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz) NOTE: 1. Class C Gpe Zin Zout 15 -- -- -- 16 45 6.4 - j4.8 75 - j45 -- -- -- -- dB % Ohms Ohms
C7 C6 L3
L4
C8 + C9 C5
+ +28 V RF OUTPUT
RF INPUT
C2
Z2 Z1 L1 DUT
Z3
C1
L2 R
C3
C4
C1, C2, C4 -- 1.0-20 pF JOHANSON 9063 C3 -- 1.0-10 pF JOHANSON C5 -- 150 pF Chip C6 -- 0.1 F C7, C8 -- 680 pF Feedthru C9 -- 1.0 F TANTALUM
L1, L3 -- 5 Turns, AWG #20, 1/4 I.D. L2 -- Ferrite Bead, FERROXCUBE L2 -- No. 56-590-65/4B L4 -- FERROXCUBE VK200-20/4B L4 -- Input/Output Connectors -- Type N Board -- Glass Teflon, = 2.56, t = 0.062
R -- 4.7 Ohms, 1/4 W Z1 -- 2.0 x 0.1 MICROSTRIP LINE Z2, Z3 -- 2.6 x 0.1 MICROSTRIP LINE
Figure 1. 400 MHz Power Gain Test Circuit
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PACKAGE DIMENSIONS
M D
1 4 2 3
K
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A C D F H J K M STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 0.200 0.220 0.095 0.130 0.055 0.065 0.025 0.035 0.040 0.050 0.003 0.007 0.435 --45 _REF MILLIMETERS MIN MAX 5.08 5.59 2.41 3.30 1.40 1.65 0.64 0.89 1.02 1.27 0.08 0.18 11.05 --45 _REF
F
J
A C
EMITTER BASE EMITTER COLLECTOR
H
CASE 305A-01 ISSUE A
Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
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