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ON Semiconductort
One Watt High Voltage Transistor
PNP Silicon
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value -300 -300 -5.0 -500 1.0 8.0 2.5 20 -55 to +150 Unit Vdc Vdc Vdc mAdc Watt mW/C Watts mW/C C
MPSW92
ON Semiconductor Preferred Device
1
2
3
CASE 29-10, STYLE 1 TO-92 (TO-226AE)
COLLECTOR 3 2 BASE
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W
1 EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1) (IC = -1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = -100 Adc, IE = 0) Emitter-Base Breakdown Voltage (IE = -100 Adc, IC = 0) Collector Cutoff Current (VCB = -200 Vdc, IE = 0) Emitter Cutoff Current (VEB = -3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO -300 -300 -5.0 -- -- -- -- -- -0.25 -0.1 Vdc Vdc Vdc Adc Adc
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2001
1
March, 2001 - Rev. 2
Publication Order Number: MPSW92/D
MPSW92
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -30 mAdc, VCE = -10 Vdc) Collector-Emitter Saturation Voltage (IC = -20 mAdc, IB = -2.0 mAdc) Base-Emitter Saturation Voltage (IC = -20 mAdc, IB = -2.0 mAdc) hFE 25 40 25 VCE(sat) VBE(sat) -- -- -- -- -- -0.5 -0.9 Vdc Vdc --
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -20 Vdc, f = 20 MHz) Collector-Base Capacitance (VCB = -20 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. fT Ccb 50 -- -- 6.0 MHz pF
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MPSW92
300 250 hFE , DC CURRENT GAIN 200 150 100 50 0 -55C TJ = +125C VCE = 10 Vdc
25C
0.1
1.0 IC, COLLECTOR CURRENT (mA)
10
100
Figure 1. DC Current Gain
Cib @ 1MHz
BANDWIDTH (MHz) f T, CURRENT-GAIN
100
150 130 110 90 70 50 30 10 1 3 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) TJ = 25C VCE = 20 Vdc F = 20 MHz 17 19 21
C, CAPACITANCE (pF)
10 Ccb @ 1MHz
1.0
0.1 0.1
1.0 10 100 VR, REVERSE VOLTAGE (VOLTS)
1000
Figure 2. Capacitance
1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100
Figure 3. Current-Gain -- Bandwidth
VCE(sat) @ 25C, IC/IB = 10 VCE(sat) @ 125C, IC/IB = 10 VCE(sat) @ -55C, IC/IB = 10 VBE(sat) @ 25C, IC/IB = 10 VBE(sat) @ 125C, IC/IB = 10 VBE(sat) @ -55C, IC/IB = 10 VBE(on) @ 25C, VCE = 10 V VBE(on) @ 125C, VCE = 10 V VBE(on) @ -55C, VCE = 10 V
Figure 4. "ON" Voltages
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MPSW92
PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-10 ISSUE AL
A
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R YLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 ---
R P F L
B
SEATING PLANE
K
XX G H R
123
D J SECTION X-X
NC
N
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MPSW92/D

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