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| SPICE MODEL: MMBT4401 MMBT4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * * Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT4403) Ideal for Medium Power Amplification and Switching Lead Free/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability A C B B E TOP VIEW SOT-23 Dim C Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0 Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8 A B C D * E D G H K J L Mechanical Data * * * * * * * * Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) E M G H J C K L M * B E All Dimensions in mm Maximum Ratings @TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RJA Tj, TSTG Value 60 40 6.0 600 300 417 -55 to +150 Unit V V V mA mW C/W C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30039 Rev. 9 - 2 1 of 4 www.diodes.com MMBT4401 (c) Diodes Incorporated Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3) @TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min 60 40 6.0 20 40 80 100 40 0.75 1.0 0.1 40 1.0 250 Max 100 100 300 0.40 0.75 0.95 1.2 6.5 30 15 8.0 500 30 15 20 225 30 Unit V V V nA nA Test Condition IC = 100A, IE = 0 IC = 1.0mA, IB = 0 IE = 100A, IC = 0 VCE = 35V, VEB(OFF) = 0.4V VCE = 35V, VEB(OFF) = 0.4V B DC Current Gain hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Notes: VCE(SAT) VBE(SAT) Ccb Ceb hie hre hfe hoe fT td tr ts tf V V pF pF k -4 x 10 S MHz ns ns ns ns IC = 100A, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 150mA, VCE = 1.0V IC = 500mA, VCE = 2.0V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA B B B B VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 20mA, f = 100MHz VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 3. Short duration pulse test used to minimize self-heating effect. 1000 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 hFE, DC CURRENT GAIN TA = 125C 100 TA = -25C TA = +25C 10 VCE = 1.0V 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1 Max Power Dissipation vs Ambient Temperature 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs Collector Current DS30039 Rev. 9 - 2 2 of 4 www.diodes.com MMBT4401 (c) Diodes Incorporated 2.0 VCE, COLLECTOR-EMITTER VOLTAGE (V) 30 20 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 IC = 30mA IC = 1mA IC = 10mA IC = 100mA IC = 300mA Cibo CAPACITANCE (pF) 10 5.0 Cobo 1.0 0.1 1.0 10 50 REVERSE VOLTS (V) Fig. 3 Typical Capacitance 0.01 0.1 1 10 100 IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) VCE = 5V TA = -50C TA = 25C 0.5 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) IC IB = 10 0.4 TA = 25C 0.3 TA = 150C 0.2 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 TA = 150C 0.1 TA = -50C 0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Base Emitter Voltage vs. Collector Current 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V 100 10 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current 1 DS30039 Rev. 9 - 2 3 of 4 www.diodes.com MMBT4401 (c) Diodes Incorporated Ordering Information (Note 4) Device MMBT4401-7-F Notes: Packaging SOT-23 Shipping 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K1P K2X = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year 1998 Code J Month Code YM 1999 K 2000 L Jan 1 2001 M Feb 2 2002 N Mar 3 2003 P Apr 4 2004 R May 5 2005 S Jun 6 2006 T Jul 7 2007 U Aug 8 2008 V 2009 W Sep 9 2010 X Oct O 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30039 Rev. 9 - 2 4 of 4 www.diodes.com MMBT4401 (c) Diodes Incorporated |
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