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| General Purpose Transistor (PNP) COMCHIP www.comchiptech.com MMBT2907A Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT2222A) Ideal for Medium Power Amplification and Switching TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.43) .052 (1.33) 1 2 max. .004 (0.1) Pin Configuration 1 = Base 2 = Emitter 3 = Collector Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 0.008g Top View COLLECTOR 3 1 BASE .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) 2 EMITTER .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Maximum Ratings & Thermal Characteristics Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Characteristic Total Device Dissipation FR- 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol VCEO VCBO VEBO IC Symbol PD 2907 -40 -60 -5.0 -600 Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 - 55 to +150 2907A -60 Ratings at 25C ambient temperature unless otherwise specified. Unit Vdc Vdc Vdc mAdc Unit mW mW/C C/W mW mW/C C/W C MDS030300B1 Page 1 .045 (1.15) .037 (0.95) General Purpose Transistor (PNP) ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol COMCHIP www.comchiptech.com Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(3) (IC = -10 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = -10 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = -10 mAdc, IC = 0) Collector Cutoff Current (VCE = -30 Vdc, VBE(off) = -0.5 Vdc) Collector Cutoff Current (VCB = -50 Vdc, IE = 0) MMBT2907 MMBT2907A MMBT2907 MMBT2907A IB V(BR)CEO MMBT2907 MMBT2907A V(BR)CBO V(BR)EBO ICEX ICBO -- -- -- -- -- -0.020 -0.010 -20 -10 -50 nAdc -40 -60 -60 -5.0 -- -- -- -- -- -50 Vdc Vdc nAdc Adc Vdc (VCB = -50 Vdc, IE = 0, TA = 125C) Base Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) ON CHARACTERISTICS DC Current Gain (IC = -0.1 mAdc, VCE = -10 Vdc) hFE MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A VCE(sat) -- -- VBE(sat) -- -- -1.3 -2.6 -0.4 -1.6 Vdc 35 75 50 100 75 100 -- 100 30 50 -- -- -- -- -- -- -- 300 -- -- Vdc -- (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -150 mAdc, VCE = -10 Vdc) (3) (IC = -500 mAdc, VCE = -10 Vdc) (3) Collector - Emitter Saturation Voltage (3) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) Base - Emitter Saturation Voltage (3) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) 1.FR-5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. MDS030300B1 Page 2 General Purpose Transistor (PNP) COMCHIP www.comchiptech.com SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (3),(4) (IC = -50 mAdc, VCE = -20 Vdc, f = 100 MHz) Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = -2.0 Vdc, IC = 0, f = 1.0 MHz) fT 200 Cobo -- Cibo -- 30 8.0 pF -- pF MHz SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time (VCC = -6.0 Vdc, IC = -150 mAdc, IB1 = IB2 = -15 mAdc) 15 mAdc (VCC = -30 Vdc, IC = -150 mAdc, IB1 = -15 mAdc) 15 mAdc ton td tr toff ts tf -- -- -- -- -- -- 45 10 40 100 80 30 ns ns 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 -16 V 200 ns 50 1.0 k INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 -30 V 200 ns v v -30 V 200 +15 V -6.0 V 37 TO OSCILLOSCOPE RISE TIME 5.0 ns 1.0 k 1.0 k 50 TO OSCILLOSCOPE RISE TIME 5.0 ns 1N916 Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit MDS030300B1 Page 3 General Purpose Transistor (PNP) TYPICAL CHARACTERISTICS 3.0 2.0 hFE , Normalized Current Gain VCE = -1.0 V VCE = -10 V TJ = 125C 25C 1.0 0.7 0.5 0.3 0.2 -0.1 - 55C COMCHIP www.comchiptech.com -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 I C, Collector Current (mA) Figure 3. DC Current Gain -1.0 VCE , Collector-Emitter Voltage (V) -0.8 IC = -1.0 mA -0.6 -10 mA -100 mA -500 mA -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 I B, Base Current (mA) -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 Figure 4. Collector Saturation Region 300 200 100 70 50 30 20 td @ VBE(off) = 0 V 10 7.0 5.0 3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, Collector Current tr 500 VCC = -30 V IC/IB = 10 TJ = 25C t, Time (ns) 300 200 tf 100 70 50 30 20 2.0 V -200 -300 -500 10 7.0 5.0 -5.0 -7.0 -10 ts = ts - 1/8 tf VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25C t, Time (ns) -20 -30 -50 -70 -100 I C, Collector Current (mA) -200 -300 -500 Figure 5. Turn-On Time MDS030300B1 MDS030300 Figure 6. Turn-Off Time Page 4 General Purpose Transistor (PNP) TYPICAL SMALL- SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25C 10 10 f = 1.0 kHz 8.0 NF, Noise Figure (dB) IC = -1.0 mA, Rs = 430 -500 A, Rs = 560 -50 A, Rs = 2.7 k -100 A, Rs = 1.6 k Rs = OPTIMUM SOURCE RESISTANCE NF, Noise Figure (dB) 8.0 COMCHIP www.comchiptech.com 6.0 6.0 4.0 4.0 IC = -50 A -100 A -500 A -1.0 mA 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 f, Frequency (kHz) 5.0 10 20 50 100 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k R s, Source Resistance (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 30 f T, Current-Gain -- Bandwidth Product (MHz) 20 Ceb 400 300 200 C, Capacitance (pF) 10 7.0 5.0 3.0 2.0 -0.1 Ccb 100 80 60 40 30 20 -1.0 -2.0 VCE = -20 V TJ = 25C -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -5.0 -10 -20 -50 -100 -200 -500 -1000 Reverse Voltage (VOLTS) I C, Collector Current (mA) Figure 9. Capacitances Figure 10. Current-Gain -- Bandwidth Product -1.0 TJ = 25C -0.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = -10 V Coefficient (mV/ C) +0.5 0 RqVC for VCE(sat) -0.5 -1.0 -1.5 -2.0 VCE(sat) @ IC/IB = 10 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 RqVB for VBE -0.6 V, Voltage (V) -0.4 -0.2 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 I C, Collector Current (mA) -50 -100 -200 -500 -5.0 -10 -20 -50 -100 -200 -500 I C, Collector Current (mA) Figure 11. "On" Voltage MDS030300B1 Figure 12. Temperature Coefficients Page 5 |
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