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MKI 50-06 A7
IGBT Modules H-Bridge
Short Circuit SOA Capability Square RBSOA
13 T1 T5 D1 9 10 16 T2 D2 3 12 4 17 11 T6 D6 14 D5
IC25 = 72 A = 600 V VCES VCE(sat) typ. = 1.9 V
Preliminary Data
1 2
IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25C TC = 80C VGE = 15 V; RG = 22 ; TVJ = 125C Clamped inductive load; L = 100 H Conditions TVJ = 25C to 150C Maximum Ratings 600 20 72 50 ICM = 100 VCEK VCES 10 225 V V A A A s
Features * NPT IGBT technology * low saturation voltage * low switching losses * square RBSOA, no latch up * high short circuit capability * positive temperature coefficient for easy parallelling * MOS input, voltage controlled * ultra fast free wheeling diodes * solderable pins for PCB mounting * package with copper base plate
VCE = VCES; VGE = 15 V; RG = 22 ; TVJ = 125C non-repetitive TC = 25C
Advantages W * space savings * reduced protection circuits * package designed for wave soldering
Symbol
Conditions
Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 1.9 2.2 4.5 0.7 200 50 60 300 30 2.3 1.7 2800 120 2.4 6.5 0.6 V V V mA mA nA ns ns ns ns mJ mJ pF nC 0.55 K/W
Typical Applications * motor control - DC motor armature winding - DC motor excitation winding - synchronous motor excitation winding * supply of transformer primary winding - power supplies - welding - X-ray - UPS - battery charger
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC
IC = 50 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V
Inductive load, TVJ = 125C VCE = 300 V; IC = 50 A VGE = 15 V; RG = 22
VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 50 A (per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2002 IXYS All rights reserved
1-4
225
MKI 50-06 A7
Diodes Symbol IF25 IF80 Conditions TC = 25C TC = 80C Maximum Ratings 72 45 A A
Equivalent Circuits for Simulation
Conduction
Symbol VF IRM trr RthJC Module Symbol TVJ Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight
Conditions IF = 50 A; VGE = 0 V; TVJ = 25C TVJ = 125C IF = 30 A; diF/dt = -500 A/s; TVJ = 125C VR = 300 V; VGE = 0 V (per diode)
Characteristic Values min. typ. max. 1.6 1.3 25 90 1.8 V V A ns 1.19 K/W
IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 0.82 V; R0 = 28 m Free Wheeling Diode (typ. at TJ = 125C) V0 = 0.89 V; R0 = 8 m Thermal Response
Conditions
Maximum Ratings -40...+150 -40...+125 C C V~ Nm
IGBT (typ.) Cth1 = 0.201 J/K; Rth1 = 0.42 K/W Cth2 = 1.252 J/K; Rth2 = 0.131 K/W Free Wheeling Diode (typ.) Cth1 = 0.116 J/K; Rth1 = 0.973 K/W Cth2 = 0.88 J/K; Rth2 = 0.277 K/W
IISOL 1 mA; 50/60 Hz Mounting torque (M5) Conditions
2500 2.7 - 3.3
Characteristic Values min. typ. max. 5 m mm mm 0.02 180 K/W g
Creepage distance on surface Strike distance in air with heatsink compound
6 6
Dimensions in mm (1 mm = 0.0394")
(c) 2002 IXYS All rights reserved
2-4
MKI 50-06 A7
150
A 120
VGE= 17V 15V 13V
150 A 120 90
11V VGE= 17V 15V 13V
IC
IC
90 60 30 0 0 1 2 3 4 VCE 5
V
9V TVJ = 25C
11V
60 30 0
9V TVJ = 125C
6
0
1
2
3
4 VCE
5V
6
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
150
A 120 IC
90 A 75 IF 60
90
45
60
TVJ = 125C
TVJ = 125C
TVJ = 25C
30
TVJ = 25C
30 0 4 6 8 10 12 VGE
VCE = 20V
15 0 0.0
14 V 16
0.5
1.0
VF
1.5
V
2.0
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of free wheeling diode
50 40 A
IRM
20
V
150 120 ns 90 60
TVJ = 125C VR = 300V IF = 30A
MWI5006A7
15
VGE
trr
trr
30 10 20 5
VCE = 300V IC = 50A
10
IRM
30 0
0 0 40 80 120 QG
nC
0 160 0 200 400
600 800 A/s -di/dt
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
(c) 2002 IXYS All rights reserved
3-4
MKI 50-06 A7
10.0
mJ Eon
td(on)
100 ns 75 t Eoff
4
mJ Eoff
400 ns 300 t td(off)
7.5
tr
3
5.0
VCE = 300V VGE = 15V
50
2
VCE = 300V VGE = 15V
200
2.5
Eon
RG = 22 TVJ = 125C
25
1
RG = 22 TVJ = 125C
100
0.0 0 40 80 IC
A
0 120
0
0 40 80 IC
tf A
0 120
Fig. 7 Typ. turn on energy and switching times versus collector current
4
mJ Eon Eon 80 ns 60 tr
VCE = 300V VGE = 15V IC = 50A TVJ = 125C
Fig. 8 Typ. turn off energy and switching times versus collector current
3 mJ
t Eoff Eoff 600 ns
td(on)
3
2
td(off)
VCE = 300V VGE = 15V IC = 50A TVJ = 125C
400
t
2
40
1
200
1 0 10 20 30 40 RG
20 50 60
0 0 10 20 30 40 RG
0 50 60
tf
Fig. 9 Typ. turn on energy and switching times versus gate resistor
120
A ICM 10 K/W ZthJC 1
Fig.10 Typ. turn off energy and switching times versus gate resistor
diode IGBT
90
0.1
60
0.01
30
RG = 22 TVJ = 125C
single pulse
0.001 0.0001 0.00001 0.0001 0.001
MWI5006A7
0 0 100 200 300 400 500 600 VCE 700 V
0.01
0.1 t
1
s 10
Fig. 11 Reverse biased safe operating area RBSOA
Fig. 12 Typ. transient thermal impedance
(c) 2002 IXYS All rights reserved
4-4

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