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MITSUBISHI SEMICONDUCTOR
MGFC42V6472A
6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION
The MGFC42V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
O U T L IN E D R A W IN G U nit:m illim e te rs (inc he s )
FEATURES
Internally matched to 50 ohm system High output power P1dB = 16W (TYP.) @ f=6.4 - 7.2 GHz High power gain GLP =8.0 dB (TYP.) @ f=6.4 - 7.2 GHz High power added efficiency P.A.E. = 31 % (TYP.) @ f=6.4 - 7.2 GHz Low Distortion[Item-51] IM3=-45 dBc(TYP.)@Po=31.0dBm S.C.L.
2 M IN
24 + /- 0 .3
(1 )
R 1.2
0.6 + /- 0 .1 5
1 7 .4 + /- 0 .2
8 .0 + /- 0 .2
(2 )
2 M IN
(3 )
20 .4 + /- 0.2
0 .1 + /- 0 .0 5
APPLICATION
item 01 : 6.4 - 7.2 GHz band power amplifier item 51 : 6.4 - 7.2 GHz band digital radio communication
16 .7
4 .3 + /- 0 .4 2 .4 + /- 0 .2
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V) ID = 4.5 (A) Rg=25 (ohm)
1 .4
G F -38
Refer to Bias Procedure
(1) GATE (2) SOURCE(FIANGE) (3) DRAIN
ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO ID IGR IGF PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature Ratings -15 -15 15 -40 84 93.7 175 -65 / +175 Unit V V A mA mA W deg.C deg.C
< Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap.
*1 : Tc=25 Deg.C
ABSOLUTE MAXIMUM RATINGS
Symbol IDSS Gm VGS(off) P1dB GLP ID PAE IM3 Parameter Saturated drain current Transconductance Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain Drain current Power added efficiency 3rd order IM distortion *1 *2 Delta Vf method Test conditions Min VDS = 3V , VGS = 0V VDS = 3V , ID = 4.4A VDS = 3V , ID = 80mA -2 41.5 VDS=10V, ID(RF off)=4.5A, f=6.4-7.2GHz 7 -42 Limits Typ 9 4 -3 42.5 8 4.5 31 -45 Max 12 -4 1.6 A S V dBm dB A % dBc Deg.C/W Unit
Rth(ch-c) Thermal resistance
*1 : item -51,2 tone test,Po=31.0dBm Single Carrier Level,f=7.2GHz,Delta f=10MHz *2 : Channel-case
MITSUBISHI ELECTRIC
Oct-'03
MITSUBISHI SEMICONDUCTOR
MGFC42V6472A
6.4 - 7.2 GHz BAND 16W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS
P1dB,Glp VS. f (Ta=25 Deg.C) Po,Eadd VS. Pin
Po,IM3 VS. Pin
OUTPUT POWER Po(dBm S.C.L)
S PARAMETERS
f (GHz) 6.40 6.50 6.60 6.70 6.80 6.90 7.00 7.10 7.20
(Ta=25 Deg.C , VDS=10V , IDS=4.5A) S Parameters (TYP.) S21 Magn. Angle(deg.) 2.98 2.95 2.87 2.80 2.73 2.63 2.54 2.46 2.37 -113 -132 -149 -166 177 162 145 135 119 S12 Angle(deg.) -159 -176 167 153 136 123 105 92 85 S22 Angle(deg.) 113 97 83 70 61 54 47 41 34
S11 Magn. Angle(deg.) 0.35 0.29 0.22 0.16 0.09 0.01 0.08 0.14 0.24 57 36 22 7 -7 -43 144 134 121
IM3(dBc)
Magn. 0.078 0.080 0.082 0.082 0.080 0.078 0.080 0.074 0.072
Magn. 0.29 0.36 0.41 0.46 0.50 0.52 0.53 0.52 0.51
MITSUBISHI ELECTRIC
POWER ADDED EFFICIENCY Eadd(%)
LINEAR POWER GAIN Glp(dB)
OUTPUT POWER P1dB(dBm)
OUTPUT POWER Po(dBm)
MITSUBISHI SEMICONDUCTOR
MGFC42V6472A
6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
MITSUBISHI ELECTRIC

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