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| MITSUBISHI SEMICONDUCTOR GaAs FET MGF0911A L, S BAND POWER GaAs FET DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. OUTLINE DRAWING 17.5 1 Unit:millimeters FEATURES * Class A operation * High output power P1dB=41dBm(TYP) * High power gain GLP=11dB(TYP) * High power added efficiency add=40%(TYP) @2.3GHz,P1dB * Hermetically sealed metal-ceramic package with ceramic lid @2.3GHz 2 1.0 @2.3GHz 2 3 2-R1.25 14.3 9.4 APPLICATION UHF band power amplifiers QUALITY GRADE * IG 10.0 RECOMMENDED BIAS CONDITIONS * VDS=10V * ID=2.6A * Rg=50 * Refer to Bias Procedure 1 GATE 2 SOURCE(FLANGE) GF-21 3 DRAIN ABSOLUTE MAXIMUM RATINGS (Ta=25C) Symbol VGDO VGSO ID IGR IGF PT Tch Tstg *1:TC=25C Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature Ratings -15 -15 10 30 63 37.5 175 -65 to +175 *1 Unit V V A mA mA W C C ELECTRICAL CHARACTERISTICS (Ta=25C) Symbol IDSS gm VGS(off) P1dB GLP add Rth(ch-c) Parameter Saturated drain current Transconductance Gate to source cut-off voltage Output power at 1dB gain compression VDS=3V,VGS=0V VDS=3V,ID=2.6A VDS=3V,ID=20mA Test conditions Min - - -2 40 VDS=10V,ID 2.6A,f=2.3GHz 10 - - Limits Typ - 3.0 - 41 11 40 - Max 10 - -5 - - - 4.0 Unit A S V dBm dB % C/W Linear power gain *2 Power added efficiency at P1dB Thermal resistance *1 Vf method *1:Channel to case *2:Pin=25dBm Nov. 97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF0911A L, S BAND POWER GaAs FET TYPICAL CHARACTERISTICS ID vs. VGS 12 VDS=3V Ta=25C 12 VGS=-0.5V/Step Ta=25C VGS=0V 8 8 ID vs. VDS 4 4 0 -3 -2 -1 0 0 0 1 2 3 4 5 6 GATE TO SOURCE VOLTAGE VGS(V) DRAIN TO SOURCE VOLTAGE VDS(V) PO & add vs. Pin (f=2.3GHz) 45 VDS=10V ID=2.6A Gp=11 10 9 dB 13 12 11 PO 10 41 35 39 30 add 25 0 20 25 30 35 50 40 30 20 10 0 37 40 20 GLP,P1dB, ID and add vs. VDS (f=2.3GHz) ID=2.6A GLP 40 P1dB add 6 8 10 INPUT POWER Pin(dBm) VDS(V) Nov. 97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF0911A L, S BAND POWER GaAs FET S11 ,S22 vs. f. +j50 +j25 +j100 S21 ,S12 vs. f. +90 3.0GHz +j10 3.0GHz 3.0GHz S22 0.5GHz 25 50 100 250 +j250 S21 5 4 3 2 0.5GHz 1 0 3.0GHz S12 0 S11 180 0 0.5GHz I S21 I 0.5GHz -j10 -j250 0.1 -j25 -j50 -j100 Ta=25C VDS=10V ID=2.6A 0.2 -90 S PARAMETERS (Ta=25C,VDS=10V,ID=2.6A) Freq. (GHz) 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 Magn. 0.986 0.985 0.984 0.983 0.982 0.981 0.980 0.979 0.978 0.976 0.975 0.974 0.973 0.972 0.971 0.970 0.969 0.968 0.967 0.966 0.965 0.965 0.964 0.963 0.962 0.961 S11 Angle(deg.) -167.3 -171.3 -174.3 -175.5 -172.1 -173.9 -175.3 -176.3 -176.9 -177.9 -178.2 -179.3 -179.8 179.5 178.6 176.7 175.9 175.1 174.1 173.1 172.3 171.2 170.2 168.7 167.6 166.3 Magn. 2.046 1.833 1.515 1.356 1.233 1.128 1.033 0.970 0.919 0.878 0.845 0.811 0.788 0.771 0.754 0.653 0.638 0.638 0.635 0.625 0.628 0.634 0.635 0.646 0.642 0.651 S21 Angle(deg.) 91.2 87.9 86.1 83.6 84.0 81.1 79.7 77.8 75.8 73.6 71.6 69.4 67.8 65.8 64.1 63.1 60.9 59.0 56.3 54.2 52.3 51.3 48.9 46.3 44.0 41.0 Magn. 0.008 0.010 0.011 0.012 0.013 0.013 0.015 0.015 0.016 0.017 0.018 0.019 0.020 0.020 0.022 0.023 0.023 0.023 0.024 0.025 0.025 0.027 0.027 0.028 0.029 0.029 S12 Angle(deg.) 44.1 44.2 44.6 44.9 45.3 45.8 46.4 46.8 47.0 47.3 47.6 48.0 48.4 48.9 49.2 49.6 49.9 50.4 50.7 51.0 51.2 51.6 51.9 52.3 52.5 52.7 Magn. 0.913 0.911 0.909 0.907 0.904 0.902 0.898 0.895 0.889 0.883 0.875 0.865 0.858 0.850 0.843 0.837 0.833 0.829 0.826 0.823 0.820 0.818 0.816 0.814 0.812 0.811 S22 Angle(deg.) -178.6 -179.9 178.6 178.2 177.7 176.6 175.7 176.6 176.0 175.6 175.2 175.0 174.6 173.6 173.4 172.6 174.1 173.6 172.9 171.0 170.3 168.8 167.1 165.7 164.6 162.7 K 0.515 0.567 0.583 0.675 0.683 0.713 0.736 0.785 0.815 0.835 0.900 0.951 0.989 1.011 1.050 1.149 1.170 1.221 1.242 1.256 1.267 1.292 1.315 1.327 1.366 1.412 MSG/MAG (dB) 23.1 22.7 21.8 21.2 20.3 19.6 19.3 18.7 18.2 17.5 17.1 16.8 15.8 14.7 14.1 13.9 13.7 12.7 12.3 11.9 11.6 11.4 11.0 10.1 9.8 9.4 Nov. 97 |
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