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| Fast Recovery Diodes (FRD) MA3U689 Silicon planar type Unit : mm For high-frequency rectification 6.5 0.1 5.3 0.1 4.35 0.1 2.3 0.1 0.5 0.1 I Features * Small U-type package for surface mounting * Low-loss type with fast reverse recovery time trr * Single type 7.3 0.1 1.8 0.1 2.5 0.1 0.8 max. 0.93 0.1 1.0 0.1 0.1 0.05 0.5 0.1 I Absolute Maximum Ratings Ta = 25C Parameter Repetitive peak reverse voltage Non-repetitive peak reverse surge voltage Average forward current*1 Non-repetitive peak forward surge current*2 Junction temperature Storage temperature Symbol VRRM VRSM IF(AV) IFSM Tj Tstg Rating 200 200 2.5 40 -40 to +150 -40 to +150 Unit V V 0.75 0.1 2.3 0.1 4.6 0.1 1 2 3 A A C C 1 : N.C. 2 : Cathode 3 : Anode U-Type Package Note) *1 : TC = 25C *2 : Half sine-wave; 10 ms/cycle I Electrical Characteristics Ta = 25C Parameter Repetitive peak reverse current Symbol IRRM1 IRRM2 Forward voltage (DC) Reverse recovery time*2 Thermal resistance*1 VF trr Rth(j-c) Conditions VRRM = 200 V, TC = 25C VRRM = 200 V, Tj = 150C IF = 2.5 A, TC = 25C IF = 1 A, IR = 1 A Direct current (between junction and case) Min Typ Max 20 2 0.98 40 12.5 Unit A mA V ns C/W Note) 1. Rated input/output frequency: 10 MHz 2. *1 : TC = 25C *2 : trr measuring circuit 50 50 trr IF D.U.T 5.5 IR 0.1 x IR 1.0 0.2 1 MA3U689 IF V F 10 100C 25C Ta = 150C -20C 102 Fast Recovery Diodes (FRD) IR V R 1.6 1.4 Ta = 150C VF Ta 1 10 Reverse current IR (A) Forward voltage VF (V) Forward current IF (A) 1.2 1.0 0.8 0.6 0.4 0.2 IF = 2.5 A 1.0 A 500 mA 10-1 1 100C 10-2 10-1 10-3 10-2 25C 10-4 10-3 10-5 10-4 0 0.2 0.4 0.6 0.8 1.0 1.2 0 50 100 150 200 250 300 0 -40 0 40 80 120 160 200 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (C) IR T a 100 120 Ct VR f = 1 MHz Ta = 25C 10 Reverse current IR (A) VR = 200 V 100 V 10 V Terminal capacitance Ct (pF) 100 80 1 60 0.1 40 0.01 20 0.001 -40 0 0 40 80 120 160 200 0 50 100 150 200 250 300 Ambient temperature Ta (C) Reverse voltage VR (V) 2 |
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