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| Rectifier Diodes MA2P291 Silicon planar type Unit : mm For small power current rectification I Features * Sealed in the Mini-power type package * Allowing automatic assembly and downsizing of a set * Applicable to the AC line (lead pin pitch: 3 mm) * Allowing to supply with the magazine package 4.0 0.5 3.0 0.2 0.5 0.1 1 2 5.0 0.5 0.7 0.1 4.0 0.2 1.5 0.1 0.4 0.2 Repetitive peak reverse voltage Non-repetitive peak forward surge voltage* Reverse voltage (DC) Output current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature VRRM VRSM VR IO IFRM IFSM Tj Tstg 250 300 200 200 300 6 125 -55 to +125 V V V mA mA A C C 1 Anode 2 Cathode Mini Power Type Package (2-pin) Note) *1 : 60 Hz sine half-wave (non-repetitive) I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Thermal resistance Symbol IR VF Rth(j-a) VR = 200 V IF = 200 mA 1 0.4 Conditions Min Typ Max 1 1.3 Unit A V C/mW Note) Rated input/output frequency: 5 MHz 0 to 0.14 Parameter Symbol Rating Unit 1.5 0.2 I Absolute Maximum Ratings Ta = 25C 0.3 0.1 1 MA2P291 IF V F 1 000 300 100 75C 25C Rectifier Diodes IR V R 1 000 300 100 Ta = 125C 12 IFSM IFSM t 30 10 3 1 0.3 0.1 0.03 0.01 0 0.2 Ta = 125C - 20C 30 10 3 1 0.3 0.1 75C Forward surge current IFSM (A) 10 t Forward current IF (mA) Reverse current IR (nA) 8 6 4 25C 0.03 0.4 0.6 0.8 1.0 1.2 2 0.01 0 40 80 120 160 200 240 280 320 0 0.1 0.3 1 3 10 30 100 300 1 000 Forward voltage VF (V) Reverse voltage VR (V) Time t (ms) Ct VR 20 10 f = 1 MHz Ta = 25C Zth t 10 5 3 2 1 0.5 0.3 0.2 0.1 0.05 Thermal impedance Zth (C / mW) Terminal capacitance Ct (pF) 1 (1) No Printed-circuit board (2) With a printed-circuit board Thickness t = 1.6 mm Copper foil tCu = 0.035 mm Anode side area 10 mm2 Cathode side area 20 mm2 (1) (2) 10-1 10-2 10 20 30 50 100 200 300 500 10-3 10-2 10-1 1 10 102 103 104 Reverse voltage VR (V) Time t (s) PD Ta 300 (1) No Printed-circuit board (2) With a printed-circuit board Thickness t = 1.6 mm Copper foil tCu = 0.035 mm Anode side area 10 mm2 Cathode side area 20 mm2 250 Power dissipation PD (mW) 200 150 (1) (2) 100 50 0 0 40 80 120 160 Ambient temperature Ta (C) 2 |
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