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LX5512E
TM (R)
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
DESCRIPTION
KEY FEATURES Advanced InGaP HBT 2.4 - 2.5GHz Operation Single-Polarity 3.3V Supply Low Quiescent Current Icq ~50mA Power Gain ~34dB @ 2.45GHz and Pout = 19dBm Total Current 130mA for Pout = 19dBm @ 2.45GHz OFDM EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBm Small Footprint (3 x 3 mm2) Low Profile (0.9mm)
APPLICATIONS
The LX5512E is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with 34 dB power gain between 2.4-2.5GHz, at a low quiescent current of 50 mA.
For 19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5512E an ideal solution for high-gain power amplifier requirements for IEEE 802.11b/g applications.
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IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com
IEEE 802.11b/g
PRODUCT HIGHLIGHT
LX5512E LX5512E
PACKAGE ORDER INFO
LQ 16 pin
Plastic MLPQ
LX5512E-LQ
Note: Available in Tape & Reel. Append the letter "T" to the part number. (i.e. LX5512E-LQT)
Copyright 2000 Rev. 1.2, 2004-01-16
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
LX5512E
TM (R)
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
ABSOLUTE MAXIMUM RATINGS
PACKAGE PIN OUT
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DC Supply Voltage, RF off ...............................................................................6V Collector Current ........................................................................................400mA Total Power Dissipation....................................................................................2W RF Input Power............................................................................................. 5dBm Operation Ambient Temperature ...................................................-40C to +85C Storage Temperature....................................................................-60C to +150C
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal.
GND
GND VC2
VC1
VC3 RF OUT RF OUT DET PWR
12 11 1 0 9
1 3
14 15 16
*
1 2 3 4
GND RF IN RF IN VB1
8
7
6
5
VB2
VB3 DET REF
VCC
THERMAL DATA
* Pad is Ground
LQ
Plastic MLPQ 16-Pin 10C/W 50C/W
LQ PACKAGE
(Bottom View)
THERMAL RESISTANCE-JUNCTION TO CASE, JC
THERMAL RESISTANCE-JUNCTION TO AMBIENT, JA
FUNCTIONAL PIN DESCRIPTION Name RF IN VB1 VB2 VB3 Description RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage. Bias current control voltage for the first stage. Bias current control voltage for the second stage Bias current control voltage for the third stage. The VB3 pin can be connected with the first and second stage control voltage (VB1,VB2) into a single reference voltage (referred to as Vref) through an external resistor bridge. Supply voltage for the bias reference and control circuits. The VCC feed line should be terminated with a 10 nF bypass capacitor close to connector pin. This pin can be combined with VC1, VC2 and VC3 pins, resulting in a single supply voltage (referred to as Vc). RF output for the power amplifier. This pin is DC-decoupled from the transistor collector of the third stage.. Power supply for first stage amplifier. The VC1 feedline should be terminated with a 120pF bypass capacitor, followed by a 10 Ohm resistor Power supply for second stage amplifier. The VC2 feedline should be terminated with a 47 pF bypass capacitor, followed by a 5 Ohm resistor Power supply for the third stage amplifier. The VC3 feedline should be terminated with a 120 pF bypass capacitor. This pin can be combined with VC1,VC2 and VCC pins, resulting in a single supply voltage (referred to as Vc Power detector reference output pin should be terminated with a 100 kOhm loading resistor Power detector output-coupled pin should be terminated with a 100 kOhm loading resistor The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power amplifier..
VCC RF OUT VC1 VC2 VC3 DET_REF DET_PWR GND
PACKAGE DATA PACKAGE DATA
Copyright 2000 Rev. 1.2, 2004-01-16
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
LX5512E
TM (R)
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
Unless otherwise specified, the following specifications apply over the operating ambient temperature 0C TA otherwise noted and the following test conditions: Vc = 3.3V, Vref = 2.9V, Icq = 50mA, TA = 25C Parameter
Frequency Range Power Gain at Pout = 19dBm EVM at Pout = 19dBm Total Current at Pout = 19dBm Quiescent Current Bias Control Reference Current Small-Signal Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Second Harmonic Third Harmonic Total Current at Pout=23dBm nd 2 side lobe at 23 dBm Ramp-On Time Differential Detector response
ELECTRICAL CHARACTERISTICS
70C except where
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Symbol
f Gp
Test Conditions
Min
2.4
LX5512E Typ Max
2.5 34 3.0 130 50 1.6 34 1.5 1.5 8 10 -50 -40 -40 200 -50 100 1.5
Units
GHz dB % mA mA mA dB dB dB dB dB dB dBc dBc mA dBc ns V
64GQAM / 54Mbps Ic_total Icq Iref S21 S21 S21 S11 S22 S12
For Icq = 50mA Over 100MHz 0C to +70C
tON
Pout = 19dBm Pout = 19dbm 11 Mbps CCK 11 Mbps CCK 10 ~ 90% 19 dBm OFDM, 100kOhm's
Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink.
ELECTRICALS ELECTRICALS
Copyright 2000 Rev. 1.2, 2004-01-16
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
LX5512E
TM (R)
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
CHARACTERISTIC CURVES
WWW .Microsemi .C OM
50 40 30 20 10 0 -10 -20 -30 -40 -50
m1 m7 freq=2.400GHz freq=2.500GHz dB(S(2,1))=33.462 dB(S(2,1))=35.376 m1 m7
dB(S(2,2)) dB(S(1,1)) dB(S(2,1)) dB(S(1,2))
2.0
2.2
2.4
2.6
2.8
3.0
freq, GHz
Figure 1 - S-Parameter (VC = 3.3V, VREF = 2.9V, Icq = 50mA)
2.4 GHz 7 6 5 EVM_PA /[%] 4 3 2 2.45 GHz 2.5 GHz
GRAPHS GRAPHS
1 0 0 2 4 6 8 10 12 14 16 18 20 22 Output Power /[dBm]
Figure 2 - EVM with 54Mb/s 64 QAM OFDM (Vc = 3.3V, Vref = 2.9V, Icq = 50mA)
Copyright 2000 Rev. 1.2, 2004-01-16
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 4
LX5512E
TM (R)
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
CHARACTERISTIC CURVES
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2.4 GHz -45
2.45 GHz
2.5 GHZ
-47.5 ACP_30 MHz /[dBc]
-50
-52.5 -55
-57.5
-60 0 2 4 6 8 10 12 14 16 18 20 22 Output Power /[dBm]
Figure 3 - ACP with 54MB/s 64 QAM OFDM (VC = 3.3V, Vref = 2.9V, Icq = 50mA)
2.4 GHz 175
2.45 GHZ
2.5 GHZ
150 CURRENT_3.3V /mA
125
100
75
GRAPHS GRAPHS
50 0 2 4 6 8 10 12 14 16 18 20 22 Output Power /[dBm]
Figure 4 - Current with 54MB/s 64 QAM OFDM (VC = 3.3V, Vref = 2.9V, Icq = 50mA)
Copyright 2000 Rev. 1.2, 2004-01-16
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
LX5512E
TM (R)
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
CHARACTERISTIC CURVES
WWW .Microsemi .C OM
Figure 5 - Spectrum with 23dBm 11Mb/s CCK (Vc = 3.3V, Vref = 2.9V, Icq = 50mA, Ic = 202mA, Frequency = 2.45GHz)
50 40 30 20 10 0 -10 -20 -30 -40 -50
m1 m7 freq=2.400GHz freq=2.500GHz dB(S(2,1))=34.020 dB(S(2,1))=35.911 m1 m7
dB(S(2,2)) dB(S(1,1)) dB(S(2,1)) dB(S(1,2))
GRAPHS GRAPHS
2.0
2.2
2.4
2.6
2.8
3.0
freq, GHz
Figure 6 - S-Parameter (VC = 5.0V, VREF = 2.9V, Icq = 55mA)
Copyright 2000 Rev. 1.2, 2004-01-16
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 6
LX5512E
TM (R)
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
CHARACTERISTIC CURVES
WWW .Microsemi .C OM
2.4 GHz 4 3.5 3 EVM_PA /[%] 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10
2.45 GHz
2.5 GHz
12
14
16
18
20
22
24
Output Power /[dBm]
Figure 7 - EVM with 54Mb/s 64QAM OFDM (Vc = 5V, Vref = 2.9V, Icq =55mA,)
2.4 GHz -45 2.45 GHz 2.5 GHZ
-47.5 ACP_30 MHz /[dBc]
-50
-52.5 -55
-57.5
GRAPHS GRAPHS
-60 0 2 4 6 8 10 12 14 16 18 20 22 24 Output Power /[dBm]
Figure 8 - ACP Data with 54Mb/s 64 QAM OFDM (Vc = 5V, Vref = 2.9V, Icq = 55mA)
Copyright 2000 Rev. 1.2, 2004-01-16
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 7
LX5512E
TM (R)
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
CHARACTERISTIC CURVES
WWW .Microsemi .C OM
2.4 GHz 225 200 CURRENT_5.0V /mA 175 150 125 100 75 50 0 2 4 6 8 10
2.45 GHZ
2.5 GHZ
12
14
16
18
20
22
24
Output Power /[dBm]
Figure 9 - Current with 54MB/s 64 QAM OFDM (VC = 5.0V, Vref = 2.9V, Icq = 55mA)
GRAPHS GRAPHS
Figure 10 - Spectrum with 25dBm 11Mb/s CCK (Vc = 5V, Vref = 2.9V, Icq = 55mA, Ic = 258mA, Frequency = 2.45GHz)
Copyright 2000 Rev. 1.2, 2004-01-16
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 8
LX5512E
TM (R)
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
PACKAGE DIMENSIONS
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LQ
16-Pin MLPQ 3x3 (67x67 mil DAP)
D
b
E
D2
E2 e A1 A3 A
K L
Dim A A1 A3 b D E e D2 E2 K L
MILLIMETERS MIN MAX 0.80 1.00 0 0.05 0.20 REF 0.18 0.30 3.00 BSC 3.00 BSC 0.50 BSC 1.30 1.55 1.30 1.55 0.2 0.35 0.50
INCHES MIN MAX 0.031 0.039 0 0.002 0.008 REF 0.007 0.012 0.118 BSC 0.118 BSC 0.020 BSC 0.051 0.061 0.051 0.061 0.008 0.012 0.020
Note:
1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006") on any side. Lead dimension shall not include solder coverage.
MECHANICALS MECHANICALS
Copyright 2000 Rev. 1.2, 2004-01-16
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 10
LX5512E
TM (R)
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
NOTES
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NOTES NOTES
PRODUCTION DATA - Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time.
Copyright 2000 Rev. 1.2, 2004-01-16
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 11

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