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HYS72D MAX8702 MMBT390 04020 T201117 CA139 PR2KT X55C18
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 polyfet rf devices
LP702
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 70.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Device Dissipation 150 Watts Junction to Case Thermal Resistance o 1.00 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V
9.0 A
RF CHARACTERISTICS (
SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 12 55 TYP
70.0 WATTS OUTPUT )
MAX UNITS dB % 20:1 TEST CONDITIONS Idq = 0.60 A, Vds = 28.0 V, F = Idq = 0.60 A, Vds = 28.0 V, F =
500 MHz 500 MHz
VSWR
Relative Idq = 0.60 A, Vds = 28.0 V, F = 500 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 3.2 0.45 20.00 120.0 3.2 60.0 MIN 65 4.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.40 mA, Vgs = 0V
Vds = 28.0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.40 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 12.00 A Vgs = 20V, Vds = 10V Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 04/27/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
LP702
POUT VS PIN GRAPH
LP702 POUT VS PIN Freq= 500MHz, VDS=28V, Idq=.4A
50 49 48 47 46 45 44 43 42 41 40 39 23 25 27 29 31 PIN IN dBm 33 35 37 39 17.00 16.00 15.00
1000
CAPACITANCE VS VOLTAGE
L1B 2DIE CAPACITANCE
Pout Efficiency = 60% Gain 1dB compresion = 50W
14.00 13.00 12.00 11.00 10.00 9.00 8.00 7.00 6.00
1 0 5 10 15 20 10 100
Ciss Coss
Crss
25
30
VDS IN VOLTS
IV CURVE
L1B 2 DIE IV
20 18 16 14 ID IN AMPS 12 10 8 6 4 2 0 0 2 4 6 8 10 12 VDS IN VOLTS Vg=6v vg=8v 14 16 18 20
0.1 1 10 100
ID & GM VS VGS
L1B 2 DIE ID, GM vs VG
ID
GM
vg=2v
Vg=4v
vg=10v
vg=12v
0
2
4
6 8 Vgs in Volts
10
12
14
Zin Zout
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
.XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 04/27/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com


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