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| Infrared Light Emitting Diodes LN671 GaAlAs Infrared Light Emitting Diode Light source for distance measuring systems 4 5.3 max. 5.00.1 2.540.1 3 1.00.1 Unit : mm 1.80.3 0.80.2 Features High-power output, high-efficiency : PO = 10 mW (typ.) Fast response and high-speed modulation capability : tr, tf = 30 ns(typ.) Small plastic package Epin o3.2 13.50.1 4.00.1 1.00.3 1.00.3 4-0.6 +0.1 -0.2 1.00.1 4.3 max. 0.2 +0.1 -0.05 4-0.50.15 1 10 2 10 Absolute Maximum Ratings (Ta = 25C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * 5 Symbol PD IF IFP * Ratings 130 70 1 3 -25 to +85 -30 to +100 Unit mW mA A V C C 5 1: Anode 2: Common Cathode 3: NC 4: Common Cathode VR Topr Tstg f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Rise time Fall time Half-power angle Symbol PO P VF IR tr tf Conditions IF = 50mA IF = 50mA IF = 50mA IF = 50mA VR = 3V IFP = 50mA IFP = 50mA The angle in which radiant intencity is 50% min 6 typ 10 880 50 1.4 30 30 50 max 10 10 Unit mW nm nm 1.8 10 V A ns ns deg. 1 LN671 Infrared Light Emitting Diodes IF -- Ta 120 10 2 IFP -- Duty cycle tw = 10s Ta = 25C 10 3 IFP -- VFP tw = 10s f = 100Hz Ta = 25C IF (mA) 10 IFP (mA) Pulse forward current 10 -1 1 10 10 2 IFP (A) 100 10 2 Allowable forward current 80 Pulse forward current 1 10 60 10 -1 1 40 20 10 -2 10 -1 0 - 25 0 20 40 60 80 100 10 -3 10 -2 10 -2 0 1 2 3 4 5 Ambient temperature Ta (C ) Duty cycle (%) Pulse forward voltage VFP (V) PO -- IFP 10 3 (1) tw = 10s f = 100Hz (2) DC Ta = 25C 2.2 VF -- Ta 10 IF = 50mA PO -- Ta IF = 50mA Relative radiant power PO Forward voltage 10 (1) VF (V) 10 2 1.8 1.4 Relative radiant power PO 0 40 80 120 1 1 (2) 1.0 10 -1 10 -2 1 10 10 2 10 3 10 4 0.6 - 40 10 -1 - 40 0 40 80 Pulse forward current IFP (mA) Ambient temperature Ta (C ) Ambient temperature Ta (C ) P -- Ta 920 IF = 50mA 100 Spectral characteristics IF = 50mA Ta = 25C Directivity characteristics 0 100 10 20 Peak emission wavelength P (nm) Relative radiant intensity (%) Relative radiant intensity (%) 900 80 90 80 30 880 60 70 60 50 40 50 60 70 80 90 860 40 40 30 840 20 20 820 - 40 0 40 80 120 0 750 800 850 900 950 1000 1050 Ambient temperature Ta (C ) Wavelength (nm) 2 |
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