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| LESHAN RADIO COMPANY, LTD. Band Switching Diode Applications High frequency switching Features 1) Small surface mounting type. 2) High reliability. Construction Silicon epitaxial planar SOD-523 LBA277AT1 1 2 1 CATHODE 2 ANODE Device Marking LBA277AT1 = 1 Absolute maximum ratings (TA=25C) Parameter DC reverse voltage DC forward current Junction temperature Storage temperature Symbol VR IF Tj T stg Limits 35 100 125 -55~+125 Unit V mA C C Electrical characteristics (TA=25C) Parameter Forward voltage Capacitance between terminals Forward operating resistance Reverse current Symbol VF IR CT rF Min. - - - - Typ. - - - - Max. 1.0 10 1.2 0.9 Unit V nA pF Conditions IF=10mA VR=25V VR=6V, f =1MHz IF=2mA, f =100MHz LBA277AT1-1/3 LESHAN RADIO COMPANY, LTD. LBA277AT1 Electrical characteristic curves (T A=25 C) 1 FORWARD CURRENT : IF(mA) 10.0 10m 1m 100 10 1 100n 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 REVERSE CURRENT : IR (nA) 100m 1.0 0.1 0 10 20 30 40 50 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics CAPACITANCE BETWEEN TERMINALS : CT (pF) FORWARD OPERATING RESISTANCE : r F () Fig. 2 Reverse characteristics 3 1.0 f=100MHz 0.5 2 0.2 1 0 1 2 5 10 0 0 10 20 30 FORWARD CURRENT : IF (mA) REVERSE VOLTAGE : VR (V) Fig. 4 Forward operating resistance characteristics Fig. 3 Capacitance between terminals characteristics LBA277AT1-2/3 LESHAN RADIO COMPANY, LTD. LBA277AT1 SOD-523/SC-79 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. A X Y B D 2 PL .08(.003) M T X Y DIM A B C D MILLIMETERS MIN MAX 1.10 0.70 0.50 0.25 0.07 0.15 1.50 1.30 0.90 0.70 0.35 0.20 0.25 1.70 INCHES MIN MAX 0.043 0.028 0.020 0.010 0.0028 0.006 0.059 0.051 0.035 0.028 0.014 0.0079 0.010 0.067 C J s K SEATING PLANE T J K S LBA277AT1-3/3 |
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