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| LESHAN RADIO COMPANY, LTD. Silicon PNP Epitaxial Planer Transistor L4401DW1T1 SC88 MAXIMUM RATINGS Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current-continuoun Characteristic Total Device Dissipation FR-5 Board, (1) TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature R JA o Symbol VCEO VCBO VEBO IC Ratings -50 -60 -6 -150 Symbol PD Unit V V V mAdc Max 380 328 -55 to +150 Unit mW o THERMAL CHARATEERISTICS C/W o Tj ,Tstg C DEVICE MARKING L4401DW1T1=5K ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) Characteristic Symbol V(BR)CEO V(BR)EBO V(BR)CBO Min -50 -6 -60 Typ Max Unit V V V OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC=-1mA) Emitter-Base Breakdown Voltage (IE=-50 A) Collector-Base Breakdown Voltage (IC=-50 A) L4401DW1T1-1/2 LESHAN RADIO COMPANY, LTD. Collector Cutoff Current (VCB=-60V) Emitter Cutoff Current (VBE=-6V) ICBO IEBO - - -0.1 -0.1 A A ON CHARACTERISTICS DC Current Gain (IC=-1mA, VCE=-6.0V) Collector-Emitter Saturation Voltage (IC=-50mA,IB=-5mA) Hfe 120 560 VCE(SAT) Ft Cobo - 140 4 -0.5 5 V MHz Pf SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (VCE = -12.0V; IE =2.0 mA,f=300MHZ) Output Capacitance(VCB=-12V,f=1.0MHz) PACKAGE DIMENSIONS SC-88 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026BSC --- 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65BSC --- 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40 DIM A B C D G H J K N S V L4401DW1T1-2/2 |
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