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| SEMICONDUCTOR TECHNICAL DATA POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. B KTC3266 EPITAXIAL PLANAR NPN TRANSISTOR C FEATURES : VCE(sat)=0.5V(Max.) at IC=2A Complementary to KTA1296. K D E G N A Low Saturation Voltage. MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 20 20 6 2 0.5 625 150 -55 150 UNIT F H F V L V V A A mW 1 2 3 M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification Y:120 240, ) TEST CONDITION VCB=20V, IE=0 VEB=6V, IC=0 VCE=2V, IC=0.1A VCE=2V, IC=2A IC=2A, IB=0.1A VCE=2V, IC=0.1A VCE=2V, IC=0.5A VCB=10V, IE=0, f=1MHz MIN. 120 75 TYP. 120 30 MAX. 0.1 0.1 400 0.5 0.85 V V MHz pF UNIT A A ICBO IEBO SYMBOL hFE(1) (Note) hFE(2) VCE(sat) VBE fT Cob GR:200 400 2000. 11. 30 Revision No : 0 1/2 KTC3266 I C - VCE COLLECTOR CURRENT I C (mA) 2000 1600 1200 800 400 0 0 4 8 I B =20mA I B =15mA I B =10mA I B =8mA I B =6mA I B =4mA I B =3mA I B =2mA I B =1mA I B =0mA h FE - I C DC CURRENT GAIN h FE COMMON EMITTER Ta=25 C 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 10 1 3 10 30 100 300 1k 3k COMMON EMITTER VCE =2V 12 16 20 24 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) IC - VBE COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 1 3 COMMON EMITTER I C /I B =20 2000 1600 1200 800 400 0 0 0.4 0.8 1.2 1.6 2.0 2.4 BASE-EMITTER VOLTAGE V BE (V) C COMMON EMITTER V CE =2V Ta=100 Ta=25 C Ta=-25 C Ta=25 C C 0 C 10 -25 a= T a= T 10 30 100 300 1K 3K COLLECTOR CURRENT I C (mA) SAFE OPERATING AREA 10 Pc - Ta COLLECTOR CURRENT I C (A) COLLECTOR POWER DISSIPATION PC (mW) 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 3 1 0.3 0.1 0.03 0.01 0.1 I C MAX.(PULSED)** 1m I C MAX. (CONTINUOUS) DC OP Ta ERA =2 T 5 IO CN 10 m s* 10 0m s* s* 0.3 1 3 10 3 VCEO MAX. SINGLE NONREPETITIVE PULSE Ta=25 C * PULSE WIDTH:10ms(MAX.) DUTY CYCLE:30%, Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE * 0 COLLECTOR-EMITTER VOLTAGE VCE (V) 2000. 11. 30 Revision No : 0 2/2 |
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