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KSP24
KSP24
VHF Transistor
1
TO-92
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCBO VCEO IEBO IC PC TJ TSTG RTH(j-a) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25C) Derate Above 25C Junction Temperature Storage Temperature Thermal Resistance, Junction to Ambient Value 40 30 4.0 100 350 2.8 135 -55~150 357 Units V V V mA mW mW/C C C C/W
Electrical Characteristics Ta=25C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO hFE fT Cob GCE GCE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Current Gain Bandwidth Product Output Capacitance Conversion Gain (213 to 45MHz) Conversion Gain (60 to 45MHz) Test Condition IC=100A, IE=0 IC=1mA, IB=0 IE=10A, IC=0 VCB=15V, IE=0 VCE=10V, IC=8mA VCE=10V, IC=8mA, f=100MHz VCB=10V, IE=0, f=1MHz VCC=20V, IC=8mA Oscillator Injection=150mV VCC=20V, IC=8mA Oscillator Injection=150mV 19 24 30 400 620 0.25 24 29 0.36 MHz pF dB dB Min. 40 30 4.0 50 Typ. Max. Units V V V nA
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSP24
Typical Characteristics
VCE = 10V
VCE(sat),VBE(sat)[mA], SATURATION VOLTAGE
1000
10000
IC = 10IB
hFE, DC CURRENT GAIN
100
1000
VBE(sat)
VCE (sat)
100
10
1 0.1
1
10
100
1000
10 0.1
1
10
100
1000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
10k
40
VCE = 10V f = 100MHz
OSCInj = 150mVrms
GPC[dB], CONVERSION GAIN
fsig = 60MHz, fosc = 104MHz
30
1k
20
fsig = 213MHz, fosc = 275MHz
100
10
10 1 10 100
0 0 2 4 6 8 10 12 14 16
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. Current Gain Bandwidth Product
Figure 4. Conversion Gain versus Collector Current
40
50
IC = 8mADC
GPC[dB], CONVERSION GAIN
yie[ ], INPUT ADMITTANCE
fsig = 60MHz, fosc = 104MHz
40
213MHz 60MHz
gie
30
30
20
fsig = 213MHz, fosc = 275MHz
20
bie
gie
10
10
bie
0 0 100 200 300 400
0 0 2 4 6 8 10 12 14 16 18 20
Vi[mV], OSCILLATION INJECTION
IC[mA], COLLECTOR CURRENT
Figure 5. Conversion Gain versus Injection Level
Figure 6. Input Admittance
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSP24
Typical Characteristics (Continued)
0.10
240
], FORWARD TRANSFER ADMITTANCE
], REVERSE TRANSFER ADMITTANCE
f = 45MHz
0.08
f = 45MHz
200
gfe
-bre
0.06
160
bfe
120
0.04
gre < -0.01[mmho]
0.02
80
40
yre[
yfe[
], OUTPUT ADMITTANCE
yce[
(c)2001 Fairchild Semiconductor Corporation
0.00 0 2 4 6 8 10 12 14 16 18 20
0 0 2 4 6 8 10 12 14 16 18 20
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 7. Reverse Transfer Admittance
Figure 8. Forward Transfer Admittance
1.0
f = 45MHz
0.8
0.6
goe
0.4
0.2
boe
0.0 0 2 4 6 8 10 12 14 16 18 20
IC[mA], COLLECTOR CURRENT
Figure 9. Output Admittance
Rev. A1, June 2001
KSP24
Package Demensions
TO-92
4.58 -0.15
+0.25
0.46
14.47 0.40
0.10
4.58 0.20
1.27TYP [1.27 0.20] 3.60
0.20
1.27TYP [1.27 0.20]
0.38 -0.05
+0.10
3.86MAX
1.02 0.10
0.38 -0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
(c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM
StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2001 Fairchild Semiconductor Corporation
Rev. H3

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