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HiPerFASTTM IGBT with Diode
IXGH 30N60BD1 VCES IXGT 30N60BD1 I C25
VCE(sat)
tfi(typ)
= 600 V = 60 A = 1.8 V = 100 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions T J = 25C to 150C T J = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25C
Maximum Ratings 600 600 20 30 60 30 120 ICM = 60 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 1.13/10 TO-247 AD TO-268 6 4 V V V V A A A A W C C C C Nm/lb.in. g g
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
G C E
C (TAB)
G = Gate, E = Emitter, Features
C = Collector, TAB = Collector
Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, TO-247 AD
* International standard package * Moderate frequency IGBT and antiparallel FRED in one package * High current handling capability * Newest generation HDMOSTM process * MOS Gate turn-on - drive simplicity Applications * * * * * AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 150C 5.0 200 3 100 1.8 V V mA mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250mA, VGE = 0 V = 250 mA, VCE = VGE
Advantages * Space savings (two devices in one package) * High power density * Optimized Vce(sat) and switching speeds for medium frequency application
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
98510C (7/00)
(c) 2000 IXYS All rights reserved
1-5
IXGH 30N60BD1 IXGT 30N60BD1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 25 2700 VCE = 25 V, VGE = 0 V, f = 1 MHz 240 50 110 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 22 40 Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 150C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 25 30 130 100 1.0 25 35 1.0 200 230 2.5 220 190 2.0 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.62 K/W K/W
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXGH) Outline
gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 %
1.5 2.49
(TO-247 AD)
0.25
TO-268AA (D3 PAK)
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions IF = IC90, VGE = 0 V, Pulse test t 300 ms, duty cycle d 2 %
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. TJ = 150C 6 100 25 1.6 2.5 V V A ns ns 0.9 K/W
Dim. Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms VR = 100 V TJ =100C IF = 1 A; -di/dt = 100 A/ms; VR = 30 V
Min. Recommended Footprint
A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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IXGH 30N60BD1 IXGT 30N60BD1
Fig. 1. Saturation Voltage Characteristics Fig. 2. Extended Output Characteristics
Fig. 3. Saturation Voltage Characteristics
Fig. 4. Temperature Dependence of VCE(sat)
Fig. 5. Admittance Curves
Fig. 6.Temperature Dependence of BVDSS & VGE(th)
(c) 2000 IXYS All rights reserved
3-5
IXGH 30N60BD1 IXGT 30N60BD1
Fig. 7. Dependence of EOFF and EOFF on IC. Fig. 8. Dependence of EOFF on RG.
Fig. 9. Gate Charge
Fig. 10. Turn-off Safe Operating Area
Fig. 11. IGBT Transient Thermal Resistance
(c) 2000 IXYS All rights reserved
4-5
IXGH 30N60BD1 IXGT 30N60BD1
TVJ= 100C VR = 300V IF= 60A IF= 30A IF= 15A TVJ=150C TVJ=100C TVJ= 100C VR = 300V IF= 60A IF= 30A IF= 15A
TVJ=25C
Fig. 12 Forward current IF versus VF
Fig. 13 Reverse recovery charge Qr versus -diF/dt
TVJ= 100C VR = 300V
Fig. 14 Peak reverse current IRM versus -diF/dt
TVJ= 100C IF = 30A V FR tfr
I RM
IF= 60A IF= 30A IF= 15A
Qr
Fig. 15 Dynamic parameters Qr, IRM versus TVJ
Fig. 16 Recovery time trr versus -diF/dt
Fig. 17 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.502 0.193 0.205 ti (s) 0.0052 0.0003 0.0162
Fig. 18 Transient thermal resistance junction to case
(c) 2000 IXYS All rights reserved
5-5

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