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| HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet VDSS ID25 RDS(on) 0.39 0.43 IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A tee 250 ns Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C T C = 25C; TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Note 1 Maximum Ratings 1000 1000 20 30 24N100 23N100 24N100 23N100 24 23 96 92 24 60 3 5 600 -55 ... +150 150 -55 ... +150 300 2500 3000 V V V V A A A A A mJ J V/ns W C C C C V~ V~ miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain baiUEe=pcieAE=iEeaaa~a=~i=aaaa_il=A~a=AE=ieEC ~e=j~aa=ce=hEaiaa=pcieAE Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Features * International standard package * Encapsulating epoxy meets UL 94 V-0, flammability classification * miniBLOC with Aluminium nitride isolation * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance * Fast intrinsic Rectifier Applications * DC-DC converters * Synchronous rectification * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls * Low voltage relays Advantages * Easy to mount * Space savings * High power density Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20V, VGS = 0V VDS = VDSS VGS = 0 V VGS = 10V, ID = 0.5 * ID25 Note 2 Min. 1000 3.0 Characteristic Values Typ. Max. V 5.0 V 100 nA TJ = 25C TJ = 125C 23N100 24N100 100 A 2 mA 0.43 0.39 =OMMM=fuvp=^aa=eaOUie=eEeEeiEC VURVTa= ENMLMMF IXFN 23N100 IXFN 24N100 Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK 0.05 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External), VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 10 V; ID = 0.5 * ID25, Note 2 Characteristic Values Min. Typ. Max. 15 22 7000 750 260 35 35 75 21 250 55 135 0.21 S pF pF pF ns ns ns ns nC nC nC K/W K/W M4 screws (4x) supplied aaaK ^ _ a b c d e g h i j k l m n jaaaaaEiEe jaaK j~nK PNKRM TKUM QKMV QKMV QKMV NQKVN PMKNO PUKMM NNKSU UKVO MKTS NOKSM ORKNR NKVU QKVR OSKRQ PKVQ QKTO OQKRV JMKMR PNKUU UKOM QKOV QKOV QKOV NRKNN PMKPM PUKOP NOKOO VKSM MKUQ NOKUR ORKQO OKNP RKVT OSKVM QKQO QKUR ORKMT MKN faAUEe jaaK NKOQM MKPMT MKNSN MKNSN MKNSN MKRUT NKNUS NKQVS MKQSM MKPRN MKMPM MKQVS MKVVM MKMTU MKNVR NKMQR MKNRR MKNUS MKVSU JMKMMO j~nK NKORR MKPOP MKNSV MKNSV MKNSV MKRVR NKNVP NKRMR MKQUN MKPTU MKMPP MKRMS NKMMN MKMUQ MKOPR NKMRV MKNTQ MKNVN MKVUT MKMMQ miniBLOC, SOT-227 B Source-Drain Diode (TJ = 25C, unless otherwise specified) Symbol Test Conditions IS ISM VSD t rr QRM IRM VGS = 0 Repetitive; pulse width limited by TJM = 24N100 23N100 24N100 OPkNMM o p Characteristic Values Min. Typ. Max. 24 23 96 92 1.5 250 A A A A V ns C A q r IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % I F = IS, -di/dt = 100 A/s, V R = 100 V 1.0 8 kciEeW=NK=miaeE=iaCiU=aaaaiEC=Ao=qgjK 2. Pulse test, t 300 ms, duty cycle d 2 %K IXYS reserves the right to change limits, test conditions, and dimensions. fuvp=jlpcbqp=~aC=fd_qe=~eE=AciEeEC=Ao=caE=ce=aceE=cN=iUE=NcaaciaaO=rKpK=e~iEaieW QIUPRIRVO QIURMIMTO QIUUNINMS QIVPNIUQQ RIMNTIRMU RIMPQITVS RIMQVIVSN RIMSPIPMT RINUTINNT RIOPTIQUN RIQUSITNR RIPUNIMOR IXFN 23N100 IXFN 24N100 20 TJ = 25C VGS = 8-10V 7V 50 40 TJ = 25C VGS = 10V 9V 8V 7V 15 ID - Amperes ID - Amperes 6V 30 20 6V 10 5 5V 10 0 5V 0 0 2 4 6 8 10 0 5 10 15 20 25 VDS - Volts VCE - Volts Figure 1. Output Characteristics at 25OC 20 16 TJ = 125C VGS = 10V 9V 8V 7V 6V Figure 2. Extended Output Characteristics at 125OC 20 15 ID - Amperes 12 8 4 5V ID - Amperes 10 TJ = 125 C TJ = 25OC O 5 0 0 4 8 12 16 20 0 3 4 5 6 7 8 VDS - Volts VGS - Volts Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID Figure 4. Admittance Curves 2.4 2.2 RDS(ON) - Normalized 2.0 1.8 1.6 1.4 ID = 12A ID = 24A VGS = 10V 1.2 1.0 0.8 25 50 75 100 125 150 TJ - Degrees C Figure 5. RDS(on) normalized to 0.5 ID25 value vs. TJ =OMMM=fuvp=^aa=eaOUie=eEeEeiEC IXFN 23N100 IXFN 24N100 15 12 VDS = 500 V ID = 12 A IG = 10 mA 20000 10000 Ciss Capacitance - pF f = 1MHz VGS - Volts 9 6 3 0 0 50 100 150 200 250 300 350 Coss 1000 Crss 100 0 5 10 15 20 25 30 35 40 Gate Charge - nC VDS - Volts Figure 6. Gate Charge 50 30 25 20 15 10 5 Figure 7. Capacitance Curves 40 ID - Amperes 30 TJ = 125oC 20 TJ = 25oC 10 0 ID - Amperes 2.5 0.0 0.5 1.0 1.5 2.0 0 -50 -25 0 25 50 75 100 125 150 VSD - Volts Case Temperature - oC Figure 8. Forward Voltage Drop of the Intrinsic Diode 0.300 0.100 Figure9. Drain Current vs. Case Temperature R(th)JC - K/W 0.010 0.001 10-4 10-3 10-2 10-1 100 101 Figure 10. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. fuvp=jlpcbqp=~aC=fd_qe=~eE=AciEeEC=Ao=caE=ce=aceE=cN=iUE=NcaaciaaO=rKpK=e~iEaieW QIUPRIRVO QIURMIMTO QIUUNINMS QIVPNIUQQ RIMNTIRMU RIMPQITVS RIMQVIVSN RIMSPIPMT RINUTINNT RIOPTIQUN RIQUSITNR RIPUNIMOR |
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