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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID (cont) = 13 A
RDS(on) = 0.4 W trr 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C
Maximum Ratings 500 500 20 30 13 52 13 18 5 180 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns
TO-247 AD (IXFH)
(TAB)
TO-204 AA (IXFM)
D
G
W C C C C
G = Gate, S = Source,
D = Drain, TAB = Drain
1.6 mm (0.062 in.) from case for 10 s Mounting torque
300
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g
Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier
q q q q q q
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2 4 100 TJ = 25C TJ = 125C 200 1 0.4 V V nA mA mA W
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 mA VDS = VGS, ID = 2.5 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V
Applications DC-DC converters Uninterruptible Power Supplies (UPS) Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Low voltage relays
q q q q q q q
q
VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 ms, duty cycle d 2 %
q q
Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
91524D (10/95)
(c) 2000 IXYS All rights reserved
1-4
IXFH 13N50 IXFH 13N50
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 7.5 9.0 2800 VGS = 0 V, VDS = 25 V, f = 1 MHz 300 70 18 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25, RG = 4.7 W (External) 27 76 32 110 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 15 40 30 40 100 60 120 25 50 0.7 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. Millimeter Min. Max. A B C D E F G H 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXFH) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM IF = IS -di/dt = 100 A/ms, VR = 100 V Test Conditions VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 13 52 1.5 250 350 0.6 1.25 9 15 A A V ns ns mC mC A A
J K L M N
1.5 2.49
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C
TO-204 AA (IXFM) Outline
Dim. A B C D E F G H J K Q R
Millimeter Min. Max. 38.61 39.12 19.43 19.94 6.40 9.14 0.97 1.09 1.53 2.92 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 25.90
Inches Min. Max. 1.520 1.540 - 0.785 0.252 0.360 0.038 0.043 0.060 0.115 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.020
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
IXFH 13N50 IXFH 13N50
Fig. 1 Output Characteristics
25
TJ = 25C
Fig. 2 Input Admittance
25 20
VGS=10V
8V 7V 6V
20
TJ = 25C
ID - Amperes
15 10
5V
ID - Amperes
20
15 10 5 0
5 0 0 5 10 15
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
1.4
TJ = 25C
Fig. 4 Temperature Dependence of Drain to Source Resistance
2.50 2.25
1.3
RDS(on) - Normalized
RDS(on) - Normalized
VGS = 10V
2.00
ID = 6A
1.2 1.1
VGS = 15V
1.75 1.50 1.25 1.00 0.75
1.0 0.9 0.8 0 5 10 15 20 25
0.50 -50
-25
0
25
50
75
100
125
150
ID - Amperes
TJ - Degrees C
Fig. 5 Drain Current vs. Case Temperature
15.0
13N50
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
1.2 1.1
VGS(th) BVDSS
BV/VG(th) - Normalized
-25 0 25 50 75 100 125 150
12.5
ID - Amperes
10.0 7.5 5.0 2.5 0.0 -50
1.0 0.9 0.8 0.7 0.6 0.5 -50
-25
0
25
50
75
100
125
150
TC - Degrees C
TJ - Degrees C
(c) 2000 IXYS All rights reserved
3-4
IXFH 13N50 IXFH 13N50
Fig.7 Gate Charge Characteristic Curve
10 9 8 7
VDS = 250V ID = 6.5A IG = 10mA
Fig.8 Forward Bias Safe Operating Area
100
10s
ID - Amperes
VGS - Volts
10
Limited by RDS(on)
100s 1ms
6 5 4 3 2 1 0 0 25 50 75 100
1
10ms 100ms
0.1 1 10 100
Gate Charge - nCoulombs
VDS - Volts
Fig.9 Capacitance Curves
4000 3500
Fig.10 Source Current vs. Source to Drain Voltage 25
20
Capacitance - pF
3000 2500 2000 1500 1000 500 0 0 5 10
IS - Amperes
Ciss
15
TJ = 125C
10
TJ = 25C
Coss Crss
5 0 0.00
15
20
25
0.25
0.50
0.75
1.00
1.25
1.50
VDS - Volts
VSD - Volt
Fig.11 Transient Thermal Impedance
1.00
Thermal Response - K/W
D = 0.5 D = 0.2
0.10 D = 0.1
D = 0.05 D=0.02 D=0.01
0.01
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Time - Seconds
(c) 2000 IXYS All rights reserved
4-4

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