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PD - 95555A
SMPS MOSFET
IRLR3715PbF IRLU3715PBF
HEXFET(R) Power MOSFET
Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current
l
VDSS
20V
RDS(on) max
14m
ID
54A
D-Pak IRLR3715
I-Pak IRLU3715
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TA = 25C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
20 20 54 38 210 71 3.8 0.48 -55 to + 175
Units
V V A W W W/C C
Thermal Resistance
Parameter
RJC RJA RJA Junction-to-Case Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ.
--- --- ---
Max.
2.1 110 50
Units
C/W
Notes through are on page 10
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1
12/6/04
IRLR/U3715PbF
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 --- --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 1.0 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.022 11 15 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 14 VGS = 10V, ID = 26A m 20 VGS = 4.5V, ID = 21A 3.0 V VDS = VGS, ID = 250A 20 VDS = 16V, VGS = 0V A 100 VDS = 16V, VGS = 0V, TJ = 125C 200 VGS = 16V nA -200 VGS = -16V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 26 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 11 3.8 4.4 11 6.4 73 12 5.1 1060 700 120 Max. Units Conditions --- S VDS = 10V, ID = 21A 17 ID = 21A --- nC VDS = 10V --- VGS = 4.5V 17 VGS = 0V, VDS = 10V --- VDD = 10V --- ID = 21A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 10V --- pF = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
110 21
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- --- --- 0.9 0.8 37 28 38 30 54 A 210 1.3 --- 56 42 57 45 V ns nC ns nC
VSD trr Qrr trr Qrr
2
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 21A, VGS = 0V TJ = 125C, IS = 21A, VGS = 0V TJ = 25C, IF = 21A, VR=20V di/dt = 100A/s TJ = 125C, IF = 21A, VR=20V di/dt = 100A/s
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IRLR/U3715PbF
1000
VGS 15V 10V 4.5V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP
1000
I D , Drain-to-Source Current (A)
100
10
2.5V
1
I D , Drain-to-Source Current (A)
100
VGS 15V 10V 4.5V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP
10
2.5V
0.1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
20s PULSE WIDTH TJ = 175 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 52A
I D , Drain-to-Source Current (A)
2.0
TJ = 25 C
1.5
100
TJ = 175 C
1.0
0.5
10 2.0
V DS = 15V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 8.0
VGS , Gate-to-Source Voltage (V)
0.0 -60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRLR/U3715PbF
10000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
14
ID = 21A
VGS , Gate-to-Source Voltage (V)
12 10 8 6 4 2 0
VDS = 16V VDS = 10V
C, Capacitance(pF)
1000
Ciss Coss
100
Crss
10 1 10 100
FOR TEST CIRCUIT SEE FIGURE 13
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
100
TJ = 175 C
ID, Drain-to-Source Current (A)
100 100sec
10
1
TJ = 25 C
10 Tc = 25C Tj = 175C Single Pulse 1 10
1msec 10msec
0.1 0.0
V GS = 0 V
0.4 0.8 1.2 1.6 2.0 2.4
1
VSD ,Source-to-Drain Voltage (V)
100
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLR/U3715PbF
60
LIMITED BY PACKAGE
50
V DS VGS RG
RD
D.U.T.
+
ID , Drain Current (A)
40
-VDD
4.5V
30
Pulse Width 1 s Duty Factor 0.1 %
20
Fig 10a. Switching Time Test Circuit
VDS 90%
10
0
25
50
75
100
125
150
175
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 0.05 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1
0.1
0.02 0.01
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRLR/U3715PbF
15V
EAS , Single Pulse Avalanche Energy (mJ)
240
TOP
200
VDS
L
DRIVER
BOTTOM
ID 8.5A 15A 21A
160
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
120
0.01
Fig 12a. Unclamped Inductive Test Circuit
80
40
V(BR)DSS tp
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( C)
I AS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K 12V .2F .3F
4.5 V
QGS
QGD
VGS
3mA
D.U.T.
+ V - DS
VG
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRLR/U3715PbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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IRLR/U3715PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120 WIT H ASS EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN T HE AS S EMBLY LINE "A" Note: "P" in as sembly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER
IRFU120 12 916A 34
DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A
OR
INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER
IRFU120 12 34
DAT E CODE P = DES IGNATES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = AS S EMBLY S IT E CODE
8
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IRLR/U3715PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFU120 WIT H AS S EMBLY LOT CODE 5678 AS S EMBLED ON WW 19, 1999 IN T HE AS S EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER
IRF U120 919A 56 78
DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A
OR
INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER
IRFU120 56 78
DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = AS S EMBLY S IT E CODE
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IRLR/U3715PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
max. junction temperature. Starting TJ = 25C, L = 0.51mH RG = 25, IAS = 21A,VGS=10V Pulse width 400s; duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/04
10
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