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PD - 9.1141
IRGBC20MD2-S
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* Short circuit rated -10s @125C, V GE = 15V * Switching-loss rating includes all "tail" losses TM * HEXFRED soft ultrafast diodes * Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
C
Short Circuit Rated Fast CoPack IGBT
VCES = 600V VCE(sat) 2.5V
G E
@VGE = 15V, IC = 8.0A
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
SMD-220 Absolute Maximum Ratings
Parameter
VCES IC @ T C = 25C IC @ T C = 100C ICM ILM IF @ T C = 100C IFM tsc VGE PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Max.
600 13 8.0 26 26 7.0 26 10 20 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Units
V
A
s V W
C
Thermal Resistance
Parameter
RJC RJC RJA RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient, (PCB Mount)** Junction-to-Ambient, typical socket mount Weight
Min.
-- -- -- -- --
Typ.
-- -- -- -- 2 (0.07)
Max.
2.1 3.5 40 80 --
Units
C/W
g (oz)
** When mounted on 1" square PCB (FR-4 or G-10 Material)
For recommended footprint and soldering techniques refer to application note #AN-994.
C-365
Revision 2
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IRGBC20MD2-S
Electrical Characteristics @ T = 25C (unless otherwise specified) J
V(BR)CES
V(BR)CES/TJ
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) VGE(th)/TJ gfe ICES VFM IGES
Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, I C = 250A -- 0.42 -- V/C VGE = 0V, IC = 1.0mA -- 2.0 2.5 IC = 8.0A V GE = 15V -- 2.7 -- V IC = 13A See Fig. 2, 5 -- 2.5 -- IC = 8.0A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -11 -- mV/C VCE = VGE, IC = 250A 2.7 3.8 -- S VCE = 100V, I C = 8.0A -- -- 250 A VGE = 0V, V CE = 600V -- -- 1700 VGE = 0V, V CE = 600V, T J = 150C -- 1.4 1.7 V IC = 8.0A See Fig. 13 -- 1.3 1.6 IC = 8.0A, T J = 150C -- -- 100 nA VGE = 20V
Switching Characteristics @ T = 25C (unless otherwise specified) J
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During t b Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 16 24 IC = 8.0A 3.6 5.2 nC VCC = 400V 6.0 9.0 See Fig. 8 66 -- TJ = 25C 40 -- ns IC = 8.0A, V CC = 480V 330 540 VGE = 15V, R G = 50 260 480 Energy losses include "tail" and 0.50 -- diode reverse recovery. 1.0 -- mJ See Fig. 9, 10, 11, 18 1.5 2.5 -- -- s VCC = 360V, T J = 125C VGE = 15V, R G = 50, VCPK < 500V 65 -- TJ = 150C, See Fig. 9, 10, 11, 18 46 -- ns IC = 8.0A, V CC = 480V 520 -- VGE = 15V, R G = 50 560 -- Energy losses include "tail" and 2.3 -- mJ diode reverse recovery. 7.5 -- nH Measured 5mm from package 365 -- VGE = 0V 47 -- pF VCC = 30V See Fig. 7 4.8 -- = 1.0MHz 37 55 ns TJ = 25C See Fig. 55 90 TJ = 125C 14 I F = 8.0A 3.5 5.0 A TJ = 25C See Fig. 4.5 8.0 TJ = 125C 15 V R = 200V 65 138 nC TJ = 25C See Fig. 124 360 TJ = 125C 16 di/dt = 200A/s 240 -- A/s TJ = 25C See Fig. 210 -- TJ = 125C 17 Pulse width 5.0s, single shot.
VCC=80%(V CES), VGE=20V, L=10H, R G= 50, ( See fig. 19 ) Pulse width 80s; duty factor 0.1%.
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IRGBC20MD2-S
10
D u ty c y c le : 5 0 % T J = 1 2 5 C T s in k = 9 0 C G a t e d r iv e a s sp e c if ie d T u rn -o n lo s s e s in c lu d e e ff e c ts o f re v e rse re c o v e ry P o w e r D is s ip a tio n = 1 3 W
A
8
Load Current (A)
6
6 0 % o f ra te d vo lta g e
4
2
0 0.1 1 10 100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I RMS of fundamental)
100
100
IC , Collector-to-Emitter Current (A)
T = 25C J TJ = 150C
10
IC , Collector-to-Emitter Current (A)
TJ = 150C
10
TJ = 25C
1 1
VGE = 15V 20s PULSE WIDTH A
10
1 5 10
VCC = 100V 5s PULSE WIDTH A
15 20
VCE , Collector-to-Emitter Voltage (V)
VGE, Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRGBC20MD2-S
14
12
VCE , Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
VGE = 15V
5.0
VGE = 15V 80s PULSE WIDTH I C = 16A
4.0
10
8
3.0
6
2.0
I C = 8.0A IC = 4.0A
4
1.0
2
0 25 50 75 100 125
A
150
0.0 -60 -40 -20 0 20 40 60 80
A
100 120 140 160
TC , Case Temperature (C)
TC, Case Temperature (C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature
10
T he rm al R e sp ons e (Z thJ C )
1
D = 0 .5 0
0 .2 0 0 .1 0 0 .0 5
PD M
0.1
0 .0 2 0 .0 1
t
S IN G L E P U L S E (T H E R M A L R E S P O N S E )
N o te s: 1 . D u ty fa c to r D = t 1 /t 2
1 t2
0.01 0.00001
2 . P e a k TJ = P D M x Z thJ C + T C
0.0001
0.001
0.01
0.1
1
10
t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c )
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
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IRGBC20MD2-S
600 20
VGE , Gate-to-Emitter Voltage (V)
V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc
VCE = 400V I C = 8.0A
16
C, Capacitance (pF)
Cies
400
12
Coes
8
200
4
Cres
0 1 10
A
100
0 0 4 8 12 16
A
20
VCE, Collector-to-Emitter Voltage (V)
Qg , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
1.64
Total Switching Losses (mJ)
1.62
Total Switching Losses (mJ)
VCC VGE TC IC
= 480V = 15V = 25C = 8.0A
10
RG = 50 V GE = 15V V CC = 480V
I C = 16A
I C = 8.0A I C = 4.0A
1
1.60
1.58
1.56 0 10 20 30 40 50 60
0.1 -60 -40 -20 0 20 40 60 80
A
100 120 140 160
R G , Gate Resistance ()
TC , Case Temperature (C)
W
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Case Temperature
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IRGBC20MD2-S
6.0
4.0
IC , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
RG TC V CC V GE
= 50 = 150C = 480V = 15V
100
VGE = 20V TJ = 125C
SAFE OPERATING AREA
10
2.0
0.0 0 4 8 12 16
A
20
1 1 10 100
A
1000
I C , Collector-to-Emitter Current (A)
VCE, Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current - I F (A)
10
TJ = 150C TJ = 125C TJ = 25C
1
0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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IRGBC20MD2-S
100 100
VR = 200V TJ = 125C TJ = 25C
80
VR = 200V TJ = 125C TJ = 25C
IF = 16A
t rr - (ns)
60
I F = 8.0A
I IRRM - (A)
I F = 16A
10
40
IF = 8.0A I F = 4.0A
I F = 4.0A
20
0 100
di f /dt - (A/s)
1000
1 100
di f /dt - (A/s)
1000
Fig. 14 - Typical Reverse Recovery vs. dif/dt
Fig. 15 - Typical Recovery Current vs. dif/dt
500
10000
VR = 200V TJ = 125C TJ = 25C
400
VR = 200V TJ = 125C TJ = 25C
300
di(rec)M/dt - (A/s)
Q RR - (nC)
I F = 16A
200
IF = 4.0A
1000
IF = 8.0A I F = 16A
I F = 8.0A
100
IF = 4.0A
0 100 100 100
di f /dt - (A/s)
1000
di f /dt - (A/s)
1000
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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IRGBC20MD2-S
90% Vge +Vge Same type device as D.U.T. Vce
80% of Vce
430F D.U.T.
Ic
10% Vce Ic
90% Ic 5% Ic
td(off)
tf
Eoff =
t1+5S Vce ic dt t1
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf
t1 t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr Ic
GATE VOLTAGE D.U.T. 10% +Vg +Vg
Qrr =
trr id dt tx
tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic
10% Irr Vcc
Vpk Irr
DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3
t4 Erec = Vd id dt t3
t1
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining E on, td(on), tr
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining E rec, trr, Qrr, Irr
Refer to Section D for the following:
Appendix D: Sectio D - page D-6 Fig. 18e - Macro Waveforms for Test Circuit Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 2 - SMD-220 Section D - page D-12
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