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| Standard Power MOSFET N-Channel Enhancement Mode IRFP 260 VDSS ID (cont) RDS(on) = 200 V = 46 A = 55 m Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ TJ = 25C to 150C = 25C to 150C; RGS = 1 M Maximum Ratings 200 200 20 30 46 184 46 V V V V A A A mJ V/ns W C C C TO-247 AD Continuous Transient TC TC TC = 25C = 25C, pulse width limited by TJM = 25C D (TAB) 28 5 280 -55 ... +150 150 -55 ... +150 G = Gate, S = Source, D = Drain, TAB = Drain IDM, di/dt 100 A/s, VDD VDSS, IS TJ 150C, RG = 2 TC = 25C Mounting torque 1.13/10 Nm/lb.in. 6 300 g C Features * International standard package JEDEC TO-247 AD * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * High commutating dv/dt rating * Fast switching times Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 200 2 4 100 TJ = 25C TJ = 125C 25 250 V V nA A A Applications * Switch-mode and resonant-mode power supplies * Motor controls * Uninterruptible Power Supplies (UPS) * DC choppers VDSS VGS(th) IGSS IDSS VGS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VGS = 20 VDC, VDS = 0 VDS = 200V VDS = 160V VGS = 0 V Advantages * Easy to mount with 1 screw (isolated mounting screw hole) * Space savings * High power density RDS(on) VGS = 10 V, ID = 28 A Pulse test, t 300 s, duty cycle d 2 % 0.055 IXYS reserves the right to change limits, test conditions, and dimensions. 97545(1/98) (c) 2000 IXYS All rights reserved 1-2 IRFP 260 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 24 34 3900 VGS = 0 V, VDS = 25 V, f = 1 MHz 760 320 23 VGS = 10 V, VDS = 100 VDSS, ID = 46A RG = 4.3 (External) 30 90 28 230 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 42 110 0.45 0.24 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. Millimeter Min. Max. A B C D E F G H 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 TO-247 AD (IXTH) Outline gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 28 A, pulse test Source-Drain Diode Symbol IS ISM VSD t rr Q rr Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 46 180 1.8 260 2.34 590 7.2 A A V ns uC J K L M N 1.5 2.49 Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 0.5 IS, -di/dt = 100 A/s, VR = 100 V (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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