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OBSOLETE PD - 93943 IRF6150 HEXFET(R) Power MOSFET l l l l l Ultra Low RSS(on) per Footprint Area Low Thermal Resistance Bi-Directional P-Channel Switch Super Low Profile (<.8mm) Available Tested on Tape & Reel VSS -20V RSS(on) max IS 0.036@VGS1,2 = -4.5V -7.9A 0.052@VGS1,2 = -2.5V -6.3A Description True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits, combined with the ruggedized device design that International Rectifier is well known for, provides the designer with an ex- 6 * * 6 tremely efficient and reliable device. The FlipFET package, is one-third the footprint of a comparable SO-8 package and has a profile of less than .8mm. Combined with the low thermal resistance of the die level device, this makes the FlipFET the best device for applications where printed circuit board space is at a premium and in extremely thin application environments such as battery packs, cell phones and PCMCIA cards. Absolute Maximum Ratings Parameter VSS IS @ TC = 25C IS @ TC = 70C ISM PD @TC = 25C PD @TC = 70C VGS TJ, TSTG Source- Source Voltage Continuous Current, VGS1 = VGS2 = -4.5V Continuous Current, VGS1 = VGS2 = -4.5V Pulsed Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 7.9 6.3 40 3.0 1.9 24 12 -55 to + 150 Units V A W mW/C V C Thermal Resistance Symbol RJA RJ-PCB Parameter Junction-to-Ambient Junction-to-PCB mounted Typ. 17 Max. 42 --- Units C/W www.irf.com 1 07/26/04 OBSOLETE IRF6150 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)SSS V(BR)SSS/TJ Parameter Source-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Source-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Source Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Miller Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RSS(on) VGS(th) gfs ISSS IGSS Qg Qgs QG1-S2 td(on) tr td(off) tf Ciss Coss Crss Min. -20 --- --- -0.45 TBD --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -TBD --- --- --- --- --- --- --- --- TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, I D = -1mA 0.036 VGS1 = VGS2 = -4.5V, IS = -7.9A 0.052 VGS1 = VGS2 = -2.5V, IS = -6.3A -1.2 V VSS = VGS, IS = -250A --- S VSS = -10V, IS = -7.9A -1.0 VSS = -20V, VGS = 0V A -25 VSS = -16V, VGS = 0V, TJ = 125C 100 VGS = 12V nA -100 VGS = -12V TBD IS = -TBDA TBD nC VSS = -16V TBD VGS = -5.0V --- VSS = -10V --- IS = -1.0A ns --- RG = 6.0 --- VGS = -5.0V --- VGS = 0V --- pF VSS = -15V --- = 1.0MHz Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. Gate voltage applied to both gates. When mounted on 1 inch square 2oz copper on FR-4 2 www.irf.com OBSOLETE IRF6150 Bi-Directional MOSFET Outline Dimension IPU@T) AAAA" !# AAAAb !"d !Y 6 6 6 6 AA6GGA9DH@ITDPITA6S@ATCPXIADIAHDGGDH@U@STAbDI8C@Td !AA8PIUSPGGDIBA9DH@ITDPI)AbDI8Cd "AAG@UU@SA9@TDBI6UDPI) TA2ATPVS8@ @A2A@HDUU@S TFA2ATPVS8@AF@GWDI BA2AB6U@ DTA2A8VSS@IUT@IT@ #AA9DH@ITDPI6GAUPG@S6I8@T) 6 6 6 6 ! %YA b'd 7PI9DIBAQ69T) XD9UC E G@IBUC PW@S6GGA9D@) XD9UC E G@IBUC 1A%"$AUPG@S6I8@AAA2AAAA " 1Ab!$dAUPG@S6I8@A2AAAAb$d 3A%"$AUPG@S6I8@AAA2AAAA!$ 3Ab!$dAUPG@S6I8@A2AAAAb d 1A !&AUPG@S6I8@AA2AAAA ! 1Ab$dAUPG@S6I8@A2AAAAb#d 3A !&AUPG@S6I8@AA2AAAA!" 3Ab$dAUPG@S6I8@A2AAAAb'd 6 6 6 6 * 6 6 * $AAVIG@TTAPUC@SXDT@AIPU@9A6GGA9D@A6S@AB@IADDD #Y ' b"!d #Y AAAAA# AAAAAb %d Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 www.irf.com 3 |
Price & Availability of IRF6150
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