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| B-48 01/99 IFN6449, IFN6450 N-Channel Silicon Junction Field-Effect Transistor High Voltage Absolute maximum ratings at TA = 25C Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating IFN6449 IFN6450 - 100 V - 100 V - 300 V - 200 V 10 mA 10 mA 800 mW 800 mW 6.4 mW/C 6.4 mW/C At 25C free air temperature: Static Electrical Characteristics Gate Drain Breakdown Voltage Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transfer Transmittance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance | Yfs | gos Ciss Crss V(BR)GDO V(BR)GSO IGSS VGS(OFF) IDSS IFN6449 Min - 300 - 100 Max IFN6450 Min - 200 - 100 - 100 - 100 Max Unit V V nA A V mA Process NJ42 Test Conditions IG = - 10 A, I S = OA IG = - 10 A, ID = OA VGS = - 80V, VDS = OV VGS = - 80V, VDS = OV VDS = 30V, ID = 4 nA VDS = 30V, VGS = OV TA = 150C -2 2 - 15 10 -2 2 - 15 10 0.5 3 100 10 5 0.5 3 100 10 5 mS S pF pF VDS = 30V, VGS = OV VDS = 30V, VGS = OV VDS = 30V, VGS = OV VDS = 30V, VGS = OV f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz TO39 Package Dimensions in Inches (mm) Pin Configuration 1 Source, 2 Drain, 3 Gate & Case 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com |
Price & Availability of IFN6450
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