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IDP23E60 IDB23E60 Fast Switching EmCon Diode
Feature * 600 V EmCon technology * Fast recovery * Soft switching * Low reverse recovery charge * Low forward voltage * 175C operating temperature * Easy paralleling Product Summary VRRM IF VF T jmax
P-TO220-3.SMD
600 23 1.5 175
P-TO220-2-2.
V A V C
Type IDP23E60 IDB23E60
Package P-TO220-2-2.
Ordering Code Q67040-S4486
Marking D23E60 D23E60
Pin 1 C NC
PIN 2 A C
PIN 3 A
P-TO220-3.SMD Q67040-S4487
Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Repetitive peak reverse voltage Continous forward current
TC=25C TC=90C
Symbol VRRM IF
Value 600 41 28
Unit V A
Surge non repetitive forward current
TC=25C, tp=10 ms, sine halfwave
I FSM I FRM Ptot
89 65 W 115 65
Maximum repetitive forward current
TC=25C, tp limited by Tjmax, D=0.5
Power dissipation
TC=25C TC=90C
Operating and storage temperature Soldering temperature
1.6mm(0.063 in.) from case for 10s
Tj , Tstg TS
-55... +175 255
C C
Rev.2
Page 1
2003-07-31
IDP23E60 IDB23E60
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area 1)
Symbol min. RthJC RthJA -
Values typ. max. 1.3 75 50
Unit
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Reverse leakage current
V R=600V, Tj=25C V R=600V, Tj=150C
Symbol min. IR VF -
Values typ. max.
Unit
A 1.5 1.5 50 1900 V 2 -
Forward voltage drop
IF=23A, T j=25C IF=23A, T j=150C
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air.
Rev.2
Page 2
2003-07-31
IDP23E60 IDB23E60
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time
V R=400V, IF=23A, diF/dt=1000A/s, Tj=25C V R=400V, IF=23A, diF/dt=1000A/s, Tj=125C V R=400V, IF=23A, diF/dt=1000A/s, Tj=150C
Symbol min. t rr I rrm Q rr S -
Values typ. max.
Unit
ns 120 164 170 17 19.5 21.5 970 1580 1770 4.4 4.8 5 A nC -
Peak reverse current
V R=400V, IF = 23A, diF/dt=1000A/s, Tj =25C V R=400V, IF =23A, diF/dt=1000A/s, T j=125C V R=400V, IF =23A, diF/dt=1000A/s, T j=150C
Reverse recovery charge
V R=400V, IF=23A, diF/dt=1000A/s, Tj=25C V R=400V, IF =23A, diF/dt=1000A/s, T j=125C V R=400V, IF =23A, diF/dt=1000A/s, T j=150C
Reverse recovery softness factor
V R=400V, IF=23A, diF/dt=1000A/s, Tj=25C V R=400V, IF=23A, diF/dt=1000A/s, Tj=125C V R=400V, IF=23A, diF/dt=1000A/s, Tj=150C
Rev.2
Page 3
2003-07-31
IDP23E60 IDB23E60
1 Power dissipation Ptot = f (TC) parameter: Tj 175 C
120
2 Diode forward current IF = f(TC) parameter: Tj 175C
45
W
A
35 30
90
P tot
75
IF
25 20 15 10 5 0 25 50 75 100 125 175
60
45
30
15
0 25
C TC
50
75
100
125
C TC
175
3 Typ. diode forward current IF = f (VF)
70
4 Typ. diode forward voltage VF = f (Tj)
2
A
-55C 25C 100C 150C
V
1.8 1.7
46A
50
VF
IF
40
1.6 1.5
23A
30
1.4 1.3
11,5A
20
1.2 10 1.1 0 0 1 -60
0.5
1
1.5
V VF
2.5
-20
20
60
100
160 C Tj
Rev.2
Page 4
2003-07-31
IDP23E60 IDB23E60
5 Typ. reverse recovery time trr = f (diF/dt) parameter: V R = 400V, T j = 125C
500
6 Typ. reverse recovery charge Qrr =f(diF/dt) parameter: VR = 400V, Tj = 125 C
2100
nC ns
1900 400 1800
46A
350
Qrr
trr
46A 23A 11.5A
1700 1600 1500
23A
300
1400 1300 1200
11.5A
250
200
1100 1000 900
150
100 200
300
400
500
600
700
800
A/s 1000 di F/dt
800 200
300
400
500
600
700
800
A/s 1000
diF/dt
7 Typ. reverse recovery current Irr = f (diF/dt) parameter: V R = 400V, T j = 125C
24
8 Typ. reverse recovery softness factor S = f(diF /dt) parameter: VR = 400V, Tj = 125C
13
A
20 18 11 10 9 8 7 6 5 4 3 200
46A 23A 11.5A
16 14 12 10 8 6 4 200
46A 23A 11.5A
Irr
300
400
500
600
700
800
A/s 1000 di F/dt
S
300
400
500
600
700
800
A/s 1000 diF/dt
Rev.2
Page 5
2003-07-31
IDP23E60 IDB23E60
9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T
10 1
IDP23E60
K/W
10 0
ZthJC
10 -1
D = 0.50 10 -2 0.20 0.10 single pulse 10 -3 0.05 0.02 0.01
10 -4 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Rev.2
Page 6
2003-07-31
IDP23E60 IDB23E60
TO-220-2-2
A P
symbol [mm] min A 9.70 15.30 0.65 3.55 2.60 9.00 13.00 17.20 4.40 0.40 B C D E max 10.10 15.90 0.85 3.85 3.00 9.40 14.00 17.80 4.80 0.60 min 0.3819 0.6024 0.0256 0.1398 0.1024 0.3543 0.5118 0.6772 0.1732 0.0157
N
dimensions [inch] max 0.3976 0.6260 0.0335 0.1516 0.1181 0.3701 0.5512 0.7008 0.1890 0.0236
D U H B V
E
F W J G
F G H J K L M N P T U V W
1.05 typ. 2.54 typ. 4.4 typ. 1.10 1.40 2.4 typ. 6.6 typ. 13.0 typ. 7.5 typ. 0.00 0.40
0.41 typ. 0.1 typ. 0.173 typ. 0.0433 0.0551 0.095 typ. 0.26 typ. 0.51 typ. 0.295 typ. 0.0000 0.0157
X L
C
M
T K
X
Rev.2
Page 7
2003-07-31
IDP23E60 IDB23E60
TO-220-3-45 (P-TO220SMD)
dimensions symbol min A B C D E F G H K L M N P Q R S T U V W X Y Z [mm] max min 9.80 10.00 1.3 typ. 1.25 1.75 0.95 1.15 2.54 typ. 0.72 0.85 5.08 typ. 4.30 1.28 9.00 4.50 1.40 9.40 [inch] max 0.3858 0.3937 0.0512 typ. 0.0492 0.0689 0.0374 0.0453 0.1 typ. 0.0283 0.0335 0.2 typ. 0.1693 0.0504 0.3543 0.1772 0.0551 0.3701
2.30 2.50 14.1 typ. 0.00 0.20 3.30 3.90 8 max 1.70 2.50 0.50 0.65 10.8 typ. 1.35 typ. 6.43 typ. 4.60 typ. 9.40 typ. 16.15 typ.
0.0906 0.0984 0.5551 typ. 0.0000 0.0079 0.1299 0.1535 8 max 0.0669 0.0984 0.0197 0.0256 0.4252 typ. 0.0532 typ. 0.2532 typ. 0.1811 typ. 0.3701 typ. 0.6358 typ.
Rev.2
Page 8
2003-07-31
IDP23E60 IDB23E60
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev.2
Page 9
2003-07-31
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